# US 12,009,802 B2 · Baw resonator with improved top electrode connection

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- Number: US 12,009,802 B2
- Document ID: US12009802B2
- Status: Granted
- Kind: B2
- Application number: 17/257,848
- Filed: 2019-07-01
- Published: 2021-09-23
- Granted: 2024-06-11
- Earliest claimed: 2018-08-01
- Assignees: RF360 Singapore Pte. Ltd.
- Applicants: Rf360 Singapore Pte. Ltd.
- Inventors: Maximilian Schiek; Willi Aigner
- Web page: https://patentgrep.com/patent/US12009802B2

## CPC

- H03H 9/132: {characterized by a particular shape}
- H03H 3/02: for the manufacture of piezoelectric or electrostrictive resonators or networks (H03H3/08 takes precedence)
- H03H 9/02118: {of lateral leakage between adjacent resonators}
- H03H 9/13: for networks consisting of piezoelectric or electrostrictive materials (for networks using surface acoustic waves H03H9/145)
- H03H 9/175: {Acoustic mirrors}
- H03H 9/205: having multiple resonators (crystal tuning forks H03H9/21)
- H03H 2003/025: {the resonators or networks comprising an acoustic mirror}
- H03H: IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS (waveguides, resonators, lines or other devices of the waveguide type H01P)

## Abstract

A BAW resonator comprises a bottom electrode, a piezoelectric layer and a top electrode. A top electrode connection is arranged in a plane above the top electrode. For doing this a spacer is arranged on the top electrode. A capping layer is sitting on the spacer distant from the top electrode such that an air-filled gap to the top electrode is kept. The top electrode connection can now be arranged above the capping layer. An electrically conductive path connects the top electrode and the top electrode connection. Such a resonator needs only one lateral design and can provide a low-ohmic interconnection of resonators e.g. in a filter circuit.

## Claims

### Claim 1

A BAW resonator, comprising:
a bottom electrode;
a piezoelectric layer;
a top electrode;
a spacer arranged above the piezoelectric layer and disposed on the top electrode;
a capping layer sitting on the spacer and keeping an air-filled gap to the top electrode
a top electrode connection arranged above the capping layer; and
an electrically conductive path connecting the top electrode and the top electrode connection.

### Claim 2 (depends on 1)

The BAW resonator of claim 1, wherein the spacer is a conductive frame sitting on a margin of an active resonator area to provide the electrically conductive path.

### Claim 3 (depends on 1)

The BAW resonator of claim 1, wherein:
the capping layer is a dielectric layer with release holes; and
an organic sealing layer covers the capping layer.

### Claim 4 (depends on 1)

The BAW resonator of claim 1, wherein:
the spacer is a conductive frame sitting on a margin of an active resonator area;
an organic sealing layer covers the capping layer;
a top metal layer is arranged on top of the organic sealing layer; and
an electrical contact between the spacer and the top metal layer is made by the organic sealing layer being filled with a conductive filler, or by an electrically isolating frame-like or frame-shaped through-contact through the organic sealing layer.

### Claim 5 (depends on 4)

The BAW resonator of claim 4, wherein:
the piezoelectric layer, the top electrode, the spacer and the organic sealing layer are structured to have a first base area; and
the bottom electrode has second base area larger than the first base area to enable use of the bottom electrode as an etch-stop layer.

### Claim 6 (depends on 1)

The BAW resonator of claim 1, wherein:
a plurality of BAW resonators are arranged one besides another on a substrate;
a Bragg mirror is arranged between each of the plurality of BAW resonators and the substrate;
the bottom electrode and each Bragg mirror under each of the plurality of BAW resonators are structured and electrically isolated against each other;
a space between adjacent BAW resonators of the plurality of BAW resonators on the substrate is filled with a filler dielectric;
the filler dielectric has a planarized surface; and
the top electrode connection is arranged on top of the planarized surface of the filler dielectric.

### Claim 7 (depends on 1)

The BAW resonator of claim 1, further comprising lateral structures on top of the top electrode inwardly adjacent to a conductive frame, the lateral structures having mainly a constant cross section and adapted to confine and form a main mode.

### Claim 8 (depends on 1)

The BAW resonator of claim 1, wherein the electrically conductive path comprises the spacer; and
wherein the spacer is a conductive frame sitting on a margin of an active resonator area to provide the electrically conductive path connecting the top electrode and the top electrode connection via the spacer.

### Claim 9 (depends on 1)

The BAW resonator of claim 1, wherein the electrically conductive path comprises at least a portion of the spacer.

### Claim 10

A BAW resonator, comprising:
a bottom electrode;
a piezoelectric layer;
a top electrode;
a spacer arranged above the piezoelectric layer on the top electrode on a margin of an active resonator area;
a capping layer sitting on the spacer and keeping an air-filled gap to the top electrode
a top electrode connection arranged above the capping layer; and
an electrically conductive path connecting the top electrode and the top electrode connection.

### Claim 11 (depends on 10)

The BAW resonator of claim 10, wherein the spacer comprises a conductive spacer; and
wherein the an electrically conductive path connects the top electrode and the top electrode connection via the conductive spacer.