# US 12,009,800 B2 · Elastic wave device, splitter, and communication apparatus

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- Number: US 12,009,800 B2
- Document ID: US12009800B2
- Status: Granted
- Kind: B2
- Application number: 17/293,828
- Filed: 2019-11-13
- Published: 2022-01-13
- Granted: 2024-06-11
- Earliest claimed: 2018-11-14
- Assignees: KYOCERA Corporation
- Applicants: KYOCERA Corporation
- Inventors: Soichiro Nozoe
- Web page: https://patentgrep.com/patent/US12009800B2

## CPC

- H03H 9/02228: {Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer}
- H03H 9/02574: {of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate}
- H03H 9/02062: {Details relating to the vibration mode}
- H03H 9/02157: {Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness}
- H03H 9/132: {characterized by a particular shape}
- H03H 9/1457: {Transducers having different finger widths}
- H03H 9/175: {Acoustic mirrors}
- H03H 9/25: Constructional features of resonators using surface acoustic waves {(devices for manipulating acoustic surface waves in general G10K11/36)}
- H03H: IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS (waveguides, resonators, lines or other devices of the waveguide type H01P)

## Abstract

An elastic wave device includes a substrate, a multilayer film located on the substrate, a piezoelectric layer located on the multilayer film, and an IDT electrode located on the piezoelectric layer. The IDT electrode includes electrode fingers each having a large width from a portion connected to a busbar to a position overlapping tip ends of the other electrode fingers when viewed in an arrangement direction of the electrode fingers.

## Claims

### Claim 1

An elastic wave device comprising:
a piezoelectric layer;
a plurality of resonators each including an IDT electrode located on the piezoelectric layer; and
a protective film located on the plurality of resonators,
wherein the IDT electrode includes
a first busbar and a second busbar that are connected to potentials different from each other and that are disposed with a distance therebetween, and
first electrode fingers and second electrode fingers that are alternately arranged in an elastic wave propagation direction, the first electrode fingers being connected to the first busbar and extending toward the second busbar, the second electrode fingers being connected to the second busbar and extending toward the first busbar,
each first electrode finger having a wide portion extending from a portion connected to the first busbar to a position overlapping tip ends of the second electrode fingers when viewed in an arrangement direction of the first electrode fingers and the second electrode fingers, the wide portion having a width greater than a width, of the first electrode finger, at a vicinity of a center of an intersection region of the first electrode fingers and the second electrode fingers, and
wherein the piezoelectric layer has a thickness of less than 1.5p, where p denotes a pitch of the electrode fingers of the IDT electrode.

### Claim 2 (depends on 1)

The elastic wave device according to claim 1, wherein the elastic wave device uses an A1-mode Lamb wave.

### Claim 3 (depends on 1)

The elastic wave device according to claim 1, wherein the piezoelectric layer has a thickness of 0.6p or less, where p denotes a pitch of the electrode fingers of the IDT electrode.

### Claim 4 (depends on 1)

The elastic wave device according to claim 1, wherein the piezoelectric layer is made of a lithium niobate single crystal and has Euler angles (φ, θ, ψ) of (0±10°, 0°±10°, 0° to 360°).

### Claim 5 (depends on 1)

The elastic wave device according to claim 1,
wherein the IDT electrode includes first dummy electrodes connected to the first busbar, each first dummy electrode facing a tip end of a corresponding one of the second electrode fingers, and
second dummy electrodes connected to the second busbar, each second dummy electrode facing a tip end of a corresponding one of the first electrode fingers,
the first dummy electrodes and the second dummy electrodes each having a width greater than the width at the vicinity of the center of the intersection region of the first electrode fingers and the second electrode fingers.

### Claim 6 (depends on 5)

The elastic wave device according to claim 5,
wherein assuming that a direction in which the first electrode fingers extend is a first direction, a repetitive arrangement direction of the first electrode fingers and the second electrode fingers is a second direction, and a pitch of the electrode fingers of the IDT electrode is p,
the wide portion extends from a position at an edge of the second dummy electrodes when viewed in the second direction to a position 1.5p or more and 2.5p or less away in a direction opposite from the first busbar in the first direction.

### Claim 7 (depends on 1)

The elastic wave device according to claim 1, comprising:
a substrate; and
a multilayer film located on the substrate and including a low acoustic impedance layer and a high acoustic impedance layer that are alternately stacked,
wherein the piezoelectric layer is located on the multilayer film.

### Claim 8 (depends on 1)

A splitter comprising:
an antenna terminal;
a transmission filter configured to filter a signal that is to be output to the antenna terminal; and
a reception filter configured to filter a signal received from the antenna terminal,
wherein at least one of the transmission filter or the reception filter includes the elastic wave device according to claim 1.

### Claim 9 (depends on 8)

A communication apparatus comprising:
an antenna;
the splitter according to claim 8, comprising the antenna terminal connected to the antenna; and
an IC connected to the transmission filter and the reception filter, the IC being connected on an opposite side from the antenna terminal in a signal path.

### Claim 10

An elastic wave device comprising:
a piezoelectric layer;
a plurality of resonators each including an IDT electrode located on the piezoelectric layer; and
a protective film located on the plurality of resonators,
wherein the IDT electrode includes
a first busbar and a second busbar that are connected to potentials different from each other and that are disposed with a distance therebetween, and
first electrode fingers and second electrode fingers that are alternately arranged in an elastic wave propagation direction, the first electrode fingers being connected to the first busbar and extending toward the second busbar, the second electrode fingers being connected to the second busbar and extending toward the first busbar,
each first electrode finger having a wide portion extending from a portion connected to the first busbar to a position overlapping tip ends of the second electrode fingers when viewed in an arrangement direction of the first electrode fingers and the second electrode fingers, the wide portion having a width greater than a width, of the first electrode finger, at a vicinity of a center of an intersection region of the first electrode fingers and the second electrode fingers, and
wherein the elastic wave device uses an A1-mode Lamb wave.