# US 12,009,637 B2 · Semiconductor light emitting device

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 12,009,637 B2
- Document ID: US12009637B2
- Status: Granted
- Kind: B2
- Application number: 17/260,883
- Filed: 2019-06-14
- Published: 2021-10-21
- Granted: 2024-06-11
- Earliest claimed: 2018-07-20
- Assignees: Sony Semiconductor Solutions Corporation
- Applicants: Sony Semiconductor Solutions Corporation
- Inventors: Yuusuke Nakayama
- Web page: https://patentgrep.com/patent/US12009637B2

## CPC

- H01S 5/34333: {with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser}
- H10H 20/817: characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
- H01S 5/320275: {semi-polar orientation}
- H10H 20/825: containing nitrogen, e.g. GaN
- H01S 5/0202: {Cleaving}
- H01S 5/0287: {Facet reflectivity}
- H01S 5/22: having a ridge or stripe structure
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

A semiconductor light emitting device of an embodiment of the present disclosure includes: a nitride semiconductor substrate having, as a principal plane, a plane inclined from a c-plane in an m-axis direction in a range from 60° to 90° both inclusive; an underlayer provided on the nitride semiconductor substrate and including a first layer and a second layer that are stacked on each other, the first layer including Alx2Inx1Ga(1-x1-x2)N (0<x1<1, 0≤x2<1) and having a dislocation along an intersection line of the principal plane of the nitride semiconductor substrate and a (1-100) plane, the second layer including Aly2Iny1Ga(1-y1-y2)N (0<y1<1, 0≤y2<1) and having a dislocation along an intersection line of the principal plane of the nitride semiconductor substrate and a (0001) plane; and a device layer including an active layer provided on the underlayer.

## Claims

### Claim 1

A semiconductor light emitting device comprising:
a nitride semiconductor substrate having, as a principal plane, a plane inclined from a c-plane in an m-axis direction in a range from 60° to 90° both inclusive;
an underlayer provided on the nitride semiconductor substrate and including a first layer and a second layer that are stacked on each other, the first layer including Alx2Inx1Ga(1-x1-x2)N (0<<x1<1, 0≤x2<1) and having a dislocation along an intersection line of the principal plane of the nitride semiconductor substrate and a (1-100) plane, the second layer including Aly2Iny1Ga(1-y1-y2)N (0<y1<1, 0≤y2<1) and having a dislocation along an intersection line of the principal plane of the nitride semiconductor substrate and a (0001) plane; and
a device layer including an active layer provided on the underlayer,
wherein an indium (In) content x1 of the first layer and an indium (In) content y1 of the second layer satisfy Expression (1) below:
0.5%≤y1<6%≤x1≤100% (1).

### Claim 2 (depends on 1)

The semiconductor light emitting device according to claim 1, wherein the principal plane of the nitride semiconductor substrate is any one of (10-11), (20-21), (30-31), and (1-100).

### Claim 3 (depends on 1)

The semiconductor light emitting device according to claim 1, wherein the active layer is coherently grown above a GaInN layer having an In content of 0.5% or more.

### Claim 4 (depends on 1)

The semiconductor light emitting device according to claim 1, wherein the active layer oscillates laser light having a peak wavelength of 480 nm or more.

### Claim 5 (depends on 1)

The semiconductor light emitting device according to claim 1, wherein the active layer contains indium (In) in a range from 20% to 50% both inclusive.

### Claim 6 (depends on 1)

The semiconductor light emitting device according to claim 1, wherein the first layer and the second layer include a quaternary system of AlGaInN and have a lattice constant larger than that of the nitride semiconductor substrate.

### Claim 7

A semiconductor light emitting device comprising:
a nitride semiconductor substrate having, as a principal plane, a plane inclined from a c-plane in an m-axis direction in a range from 60° to 90° both inclusive;
an underlayer provided on the nitride semiconductor substrate and including a first layer and a second layer that are stacked on each other, the first layer including Alx2Inx1Ga(1-x1-x2)N (0<x1<1, 0≤x2<1) and having a dislocation along an intersection line of the principal plane of the nitride semiconductor substrate and a (1-100) plane, the second layer including Aly2Iny1Ga(1-y1-y2)N (0<y1<1, 0≤y2<1) and having a dislocation along an intersection line of the principal plane of the nitride semiconductor substrate and a (0001) plane; and
a device layer including an active layer provided on the underlayer, wherein a thickness dl of the first layer and a thickness d2 of the second layer satisfy Expression (2) below:
3 nm≤d1<50 nm≤d2≤1 μm (2).