Semiconductor laser and production method for a semiconductor laser
AssigneeOSRAM Opto Semiconductors GmbH
InventorsMuhammad Ali, Harald König, Sven Gerhard, Alfred Lell
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Abstract
In one embodiment, the invention relates to a semiconductor laser comprising a semiconductor layer sequence for generating laser radiation. According to the invention, the semiconductor layer sequence has a geometric structuring on a top side. A resonator is located in the semiconductor layer sequence and is delimited by opposing facets, wherein the facets contain optically active resonator end faces. The structuring ends spaced apart from the facets. The resonator end faces are spaced apart from material removals from the semiconductor layer sequence.
Claims17
A semiconductor laser with a semiconductor layer sequence for generating laser radiation, wherein
- the semiconductor layer sequence comprises a geometric structuring on a top side
- a resonator in the semiconductor layer sequence is bounded by two opposing facets of the semiconductor layer sequence, so that the facets comprise resonator end faces,
- an electrical contact pad for electrically contacting the semiconductor layer sequence is located on the top side,
- the geometric structuring ends at a distance from at least one of the facets, and
- at least one of the resonator end faces is spaced apart from an area from which materials are removed;
- an acoustic layer is provided on at least one of the facets on the top side of the semiconductor layer sequence, the acoustic layer is of at least one metal and has a lower sound velocity than the semiconductor layer sequence, and
- the acoustic layer is arranged at a distance from the electrical contact pad and is limited to a strip at an associated facet.
A semiconductor laser with a semiconductor layer sequence for generating laser radiation, wherein
- the semiconductor layer sequence comprises a geometric structuring on a top side
- a resonator in the semiconductor layer sequence is bounded by two opposing facets of the semiconductor layer sequence, so that the facets comprise resonator end faces,
- an electrical contact pad for electrically contacting the semiconductor layer sequence is located on the top side,
- the geometric structuring ends at a distance from at least one of the facets,
- at least one of the resonator end faces is spaced apart from an area from which materials are removed, and
- an acoustic layer comprising titanium, palladium, nickel, platinum, gold, or a combination thereof is provided on at least one of the facets on the top side of the semiconductor layer sequence, wherein the acoustic layer has a lower sound velocity than the semiconductor layer sequence, and
- the acoustic layer is arranged at a distance from the electrical contact pad, directly on the top side of the semiconductor layer sequence, performs no electrical function and is limited to a strip at the associated facet,
- the acoustic layer is from 50 nm to 2 microns, and
- the contact pad rises above the acoustic layer in a direction away from the top side.
Dependencies are inferred from the claim text.