# US 12,009,575 B2 · Package structure

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- Number: US 12,009,575 B2
- Document ID: US12009575B2
- Status: Granted
- Kind: B2
- Application number: 18/302,003
- Filed: 2023-04-18
- Published: 2023-08-17
- Granted: 2024-06-11
- Earliest claimed: 2017-09-29
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Company, Ltd.
- Inventors: Nan-Chin Chuang; Chen-Hua Yu; Chung-Shi Liu; Chao-Wen Shih; Shou-Zen Chang
- Web page: https://patentgrep.com/patent/US12009575B2

## CPC

- H01Q 1/2283: {mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package}
- H01Q 1/22: by structural association with other equipment or articles
- H01Q 1/52: Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure (absorbing means H01Q17/00)
- H01Q 1/526: {Electromagnetic shields}
- H01Q 19/30: the primary active element being centre-fed and substantially straight, e.g. Yagi antenna
- H01Q 21/0087: {Apparatus or processes specially adapted for manufacturing antenna arrays (manufacturing waveguides H01P11/00)}
- H01Q 21/24: Combinations of antenna units polarised in different directions for transmitting or receiving circularly and elliptically polarised waves or waves linearly polarised in any direction {(circularly polarised patch antennas H01Q9/0428; circularly polarised horns H01Q13/0241; cross-polarised horns H01Q13/0258; polarisation converters H01Q15/242; cross-polarised rear feeds H01Q19/136; crossed polarisation dual antenna H01Q25/001)}
- H10W 42/20: protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
- H10W 42/267: {Patterned shielding planes}
- H10W 44/20: at high-frequency [HF] or radio frequency [RF]
- H10W 70/09: extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs
- H10W 74/111: {the semiconductor body being completely enclosed}
- H01Q 15/14: Reflecting surfaces; Equivalent structures {(electromagnetic shields H01Q1/526)}
- H01Q 21/28: Combinations of substantially independent non-interacting antenna units or systems {(multiple beam H01Q25/00)}
- H10W 44/209: {Vertical interconnections, e.g. vias}
- H10W 44/248: {for antennas}
- H10W 70/60: Insulating or insulated package substrates; Interposers; Redistribution layers (leadframes H10W70/40)
- H10W 70/655: Fan-out layouts
- H10W 72/241: {Dispositions, e.g. layouts}
- H10W 72/242: {relative to the surface, e.g. recessed, protruding}
- H10W 72/244: {relative to underlying supporting features, e.g. bond pads, RDLs or vias}
- H10W 72/29: Bond pads specially adapted therefor
- H10W 72/853: {On the same surface}
- H10W 72/874: {On different surfaces}
- H10W 72/923: {Bond pads having multiple stacked layers}
- H10W 72/9413: {on encapsulations}
- H10W 72/942: {relative to underlying supporting features, e.g. bond pads, RDLs or vias}
- H10W 72/983: {Reinforcing structures, e.g. collars}
- H10W 74/117: {the substrate having spherical bumps for external connection}
- H01Q: ANTENNAS, i.e. RADIO AERIALS (radiators or antennas for microwave heating H05B6/72)
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A package structure including a first redistribution circuit structure, a semiconductor die, first antennas and second antennas is provided. The semiconductor die is located on and electrically connected to the first redistribution circuit structure. The first antennas and the second antennas are located over the first redistribution circuit structure and electrically connected to the semiconductor die through the first redistribution circuit structure. A first group of the first antennas are located at a first position, a first group of the second antennas are located at a second position, and the first position is different from the second position in a stacking direction of the first redistribution circuit structure and the semiconductor die.

## Claims

### Claim 1

A package structure, comprising:
a first redistribution circuit structure;
a semiconductor die, disposed over and electrically coupled to the first redistribution circuit structure;
a first insulating encapsulation, encapsulating the semiconductor die;
a first antenna and a second antenna, electrically coupled to the semiconductor die, wherein in a vertical projection, the first antenna and the second antenna are offset from the semiconductor die, and wherein a propagating direction of an electromagnetic wave generated from the first antenna is different from a propagating direction of an electromagnetic wave generated from the second antenna; and
a first metallic layer, disposed over the first insulating encapsulation, wherein in the vertical projection, the first metallic layer is overlapped with the semiconductor die, and wherein the first metallic layer comprises:
first signal patterns, electrically coupled to the semiconductor die; and
a first antenna ground, electrically isolated from the semiconductor die.

### Claim 2 (depends on 1)

The package structure of claim 1, wherein the first insulating encapsulation further encapsulates the first antenna, and the first antenna comprises a plurality of first antennas, wherein:
a first group of the plurality of first antennas generate an electromagnetic wave propagating along a first direction,
a second group of the plurality of first antennas generate an electromagnetic wave propagating along a second direction, and
the first direction is different from the second direction.

### Claim 3 (depends on 2)

The package structure of claim 2, further comprising:
a first metallic wall, standing on the first metallic layer and encapsulated in the first insulating encapsulation, wherein in the vertical projection, the first metallic wall is between the first group of the plurality of first antennas and the second group of the plurality of first antennas.

### Claim 4 (depends on 3)

The package structure of claim 3, wherein the second antenna comprises a plurality of second antennas, wherein a first group of the plurality of second antennas generate an electromagnetic wave propagating along a third direction, a second group of the plurality of second antennas generate an electromagnetic wave propagating along a fourth direction, and the third direction is different from the fourth direction,
wherein the package structure further comprises:
a second insulating encapsulation, encapsulating the plurality of second antennas, the first insulating encapsulation being between the first redistribution circuit structure and the second insulating encapsulation;
a second metallic layer, disposed over the first insulating encapsulation, wherein in the vertical projection, the second metallic layer is overlapped with the semiconductor die, and wherein the second metallic layer comprises:
second signal patterns, electrically coupled to the semiconductor die; and
a second antenna ground, electrically isolated from the semiconductor die; and
a second metallic wall, standing on the second metallic layer and encapsulated in the second insulating encapsulation, wherein in the vertical projection, the second metallic wall is between the first group of the plurality of second antennas and the second group of the plurality of second antennas.

### Claim 5 (depends on 1)

The package structure of claim 1, further comprising:
a second redistribution circuit structure, disposed over the first insulating encapsulation, the first insulating encapsulation being between the first redistribution circuit structure and the second redistribution circuit structure,
wherein the second antenna is embedded in the second redistribution circuit structure.

### Claim 6 (depends on 5)

The package structure of claim 5, further comprising:
a plurality of third antennas, disposed over the second redistribution circuit structure and electrically coupled to the semiconductor die, wherein in the vertical projection, the plurality of third antennas are overlapped with the semiconductor die; and
a second insulating encapsulation, interposed between the plurality of third antennas and the first insulating encapsulation.

### Claim 7 (depends on 5)

The package structure of claim 5, wherein:
the first antenna comprises a plurality of first antennas, a first group of the plurality of first antennas generate an electromagnetic wave propagating along a first direction, a second group of the plurality of first antennas generate an electromagnetic wave propagating along a second direction,
the second antenna comprises a plurality of second antennas, a first group of the plurality of second antennas generate an electromagnetic wave propagating along a third direction, a second group of the plurality of second antennas generate an electromagnetic wave propagating along a fourth direction, and
the first direction, the second direction, the third direction and the fourth direction are different from one another.

### Claim 8 (depends on 1)

The package structure of claim 1, further comprising:
a second insulating encapsulation, disposed over the first insulating encapsulation and encapsulating the first antenna; and
a third insulating encapsulation, disposed over the second insulating encapsulation and encapsulating the second antenna,
wherein the second insulating encapsulation is between the first insulating encapsulation and the third insulating encapsulation, and the first metallic layer is between the first insulating encapsulation and the second encapsulation.

### Claim 9 (depends on 8)

The package structure of claim 8, further comprising:
a second metallic layer, disposed between the second insulating encapsulation and the third insulating encapsulation, wherein in the vertical projection, the second metallic layer is overlapped with the semiconductor die, and wherein the second metallic layer comprises:
second signal patterns, electrically coupled to the semiconductor die; and
a second antenna ground, electrically isolated from the semiconductor die.

### Claim 10 (depends on 8)

The package structure of claim 8, wherein:
the first antenna comprises a plurality of first antennas, a first group of the plurality of first antennas generate an electromagnetic wave propagating along a first direction, a second group of the plurality of first antennas generate an electromagnetic wave propagating along a second direction,
the second antenna comprises a plurality of second antennas, a first group of the plurality of second antennas generate an electromagnetic wave propagating along a third direction, a second group of the plurality of second antennas generate an electromagnetic wave propagating along a fourth direction, and
the first direction, the second direction, the third direction and the fourth direction are different from one another.

### Claim 11 (depends on 10)

The package structure of claim 10, wherein:
the first antenna further comprises a third group of the plurality of first antennas generate an electromagnetic wave propagating along a fifth direction, and the fifth direction is different from the first direction, the second direction, the third direction and the fourth direction.

### Claim 12

A package structure, comprising:
a redistribution circuit structure;
a semiconductor die, disposed over and electrically coupled to the redistribution circuit structure;
at least one first through via, next to the semiconductor die and electrically coupled to the redistribution circuit structure;
a first insulating encapsulation, encapsulating the semiconductor die and the at least one first through via, the at least one first through via penetrating through the first insulating encapsulation;
a plurality of first antennas, disposed over the first insulating encapsulation and electrically coupled to the semiconductor die;
at least one second through via, next to the plurality of first antennas and electrically coupled to the redistribution circuit structure;
a second insulating encapsulation, encapsulating the plurality of first antennas and the at least one second through via, the plurality of first antennas and the at least one second through via penetrating through the second insulating encapsulation;
a plurality of second antennas, disposed over the second insulating encapsulation and electrically coupled to the semiconductor die;
a third insulating encapsulation, encapsulating the plurality of second antennas, the plurality of second antennas penetrating through the third insulating encapsulation; and
a plurality of conductive terminals, disposed over the redistribution circuit structure and electrically coupled to the redistribution circuit structure, the redistribution circuit structure being between the first insulating encapsulation and the plurality of conductive terminals.

### Claim 13 (depends on 12)

The package structure of claim 12, wherein the second insulating encapsulation is between the first insulating encapsulation and the third insulating encapsulation.

### Claim 14 (depends on 12)

The package structure of claim 12, further comprising:
a first shielding layer, interposed between the first insulating encapsulation and the second insulating encapsulation, wherein the first shielding layer is electrically connected to the redistribution circuit structure through the at least one first through via; and
a second shielding layer, interposed between the second insulating encapsulation and the third insulating encapsulation, wherein the second shielding layer is electrically connected to the redistribution circuit structure through the at least one second through via, the first shielding layer, and the at least one first through via.

### Claim 15 (depends on 12)

The package structure of claim 12, wherein in a vertical projection on the redistribution circuit structure along a stacking direction of the redistribution circuit structure, the plurality of first antennas and the plurality of second antennas are offset from the semiconductor die.

### Claim 16 (depends on 12)

The package structure of claim 12, further comprising:
a plurality of semiconductor devices, disposed over the redistribution circuit structure and electrically coupled to the semiconductor die through the redistribution circuit structure, the plurality of conductive terminals and the plurality of semiconductor devices being disposed at a same side of the redistribution circuit structure.

### Claim 17

A package structure, comprising:
a redistribution structure;
a first semiconductor die, located on and electrically connected to the redistribution structure;
a through via, located on and electrically connected to the redistribution structure and next to the first semiconductor die;
a first insulating encapsulation, encapsulating the first semiconductor die and the through via;
first antennas and second antennas, aside of and electrically connected to the first semiconductor die and encapsulated in the first insulating encapsulation, wherein propagating directions of electromagnetic waves generated by the first antennas and the second antennas are different;
a second insulating encapsulation, located on the first insulating encapsulation, where the first insulating encapsulation is located between the redistribution structure and the second insulating encapsulation; and
third antennas and fourth antennas, located on and electrically connected to the first semiconductor die and encapsulated in the second insulating encapsulation, wherein propagating directions of electromagnetic waves generated by the third antennas and the fourth antennas are different.

### Claim 18 (depends on 17)

The package structure of claim 17, further comprising:
a metallic shield layer, sandwiched between and separating apart the first insulating encapsulation and the second insulating encapsulation, wherein the metallic shield layer is electrically connected to the redistribution structure through the through via;
a first through interlayer via wall, encapsulated in the first insulating encapsulation and separating the first antennas and the second antennas, wherein the first through interlayer via wall is located on and electrically connected to the redistribution structure; and
a second through interlayer via wall, encapsulated in the second insulating encapsulation and separating the third antennas and the fourth antennas, wherein the second through interlayer via wall is located on and electrically connected to the metallic shield layer.

### Claim 19 (depends on 17)

The package structure of claim 17, further comprising:
a second semiconductor die, located on and electrically connected to the redistribution structure, wherein the redistribution structure is located between the second semiconductor die and the first semiconductor die, and the second semiconductor die is electrically connected to the first second semiconductor die through the redistribution structure; and
conductive terminals, located on and electrically connected to the redistribution structure and electrically connected to the first semiconductor die, wherein the second semiconductor die and the conductive terminals are arranged side-by-side on a side of the redistribution structure.

### Claim 20 (depends on 17)

The package structure of claim 17, wherein the propagating directions of the electromagnetic waves generated by the first antennas, the second antennas, the third antennas and the fourth antennas are different from one another.