# US 12,009,460 B2 · Method for producing a conversion element, and conversion element

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- Number: US 12,009,460 B2
- Document ID: US12009460B2
- Status: Granted
- Kind: B2
- Application number: 16/768,515
- Filed: 2018-12-05
- Published: 2020-12-10
- Granted: 2024-06-11
- Earliest claimed: 2017-12-19
- Assignees: OSRAM OLED GmbH
- Applicants: Osram OLED GmbH
- Inventors: Luca Haiberger
- Web page: https://patentgrep.com/patent/US12009460B2

## CPC

- H10H 20/01: Manufacture or treatment
- H10H 20/8514: {characterised by their shape, e.g. plate or foil}
- H10H 20/841: Reflective coatings, e.g. dielectric Bragg reflectors
- H10H 20/8512: {Wavelength conversion materials}
- H10H 20/856: Reflecting means
- H10H 20/034: {of coatings}
- H10H 20/0361: {of wavelength conversion means}
- H10H 20/0363: {of optical field-shaping means}
- H10H 20/85: Packages
- H10H 20/8506: {Containers}
- H10H 20/852: Encapsulations
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

The invention relates to a method for producing a conversion element having the following steps: providing a frame having an opening; applying a sacrificial layer at least to a side surface of the at least one opening; applying a reflective layer to the sacrificial layer; introducing a conversion material into the at least one opening, the conversion material covering the reflective layer; and removing the sacrificial layer and the frame.

## Claims

### Claim 1

A method for producing a conversion element, comprising:
providing a frame having at least one opening,
applying a sacrificial layer at least to a side surface of the at least one opening,
applying a reflective layer to the sacrificial layer,
introducing a conversion material into the at least one opening, wherein the conversion material covers the reflective layer,
chemically etching the sacrificial layer to remove the sacrificial layer, and
removing the fame, wherein the reflective layer terminates flush with a bottom surface and a top surface of the conversion material.

### Claim 2

The method as claimed in the preceding claim, wherein the side surface of the at least one opening has a chamfer.

### Claim 3 (depends on 1)

A method for producing an optoelectronic semiconductor component, wherein
the method for producing the conversion element as claimed in claim 1 is carried out, and
before introducing the conversion material, a radiation-emitting semiconductor chip is introduced into the at least one opening.

### Claim 4

The method as claimed in the preceding claim, wherein the conversion material introduced partly surrounds the radiation-emitting semiconductor chip.

### Claim 5

A method for producing a conversion element, which is able to be applied on a radiation-emitting semiconductor chip, comprising:
providing a frame having at least one opening,
applying a sacrificial layer at least to a side surface of the at least one opening,
applying a reflective layer to the sacrificial layer,
introducing a conversion material into the at least one opening, wherein the conversion material covers the reflective layer,
chemically etching the sacrificial layer to remove the sacrificial layer, and
removing the frame.

### Claim 6 (depends on 5)

The method of claim 5, further comprising:
introducing the radiation-emitting semiconductor chip into the at least one opening.