# US 12,009,457 B2 · Nitride semiconductor light-emitting element

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- Number: US 12,009,457 B2
- Document ID: US12009457B2
- Status: Granted
- Kind: B2
- Application number: 17/502,161
- Filed: 2021-10-15
- Published: 2022-04-21
- Granted: 2024-06-11
- Earliest claimed: 2020-10-16
- Assignees: Nikkiso Co., Ltd.
- Applicants: Nikkiso Co., Ltd.
- Inventors: Yusuke Matsukura; Cyril Pernot
- Web page: https://patentgrep.com/patent/US12009457B2

## CPC

- H10H 20/815: having stress relaxation structures, e.g. buffer layers
- H10H 20/825: containing nitrogen, e.g. GaN
- H10H 20/811: having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

A nitride semiconductor light-emitting element outputs ultraviolet light. The nitride semiconductor light-emitting element includes an active layer including a quantum well structure that generates the ultraviolet light, a dislocation suppression structure-containing layer being formed on the active layer and including a dislocation suppression structure that stops or bends a dislocation from the active layer; and a p-type contact layer being formed on the dislocation suppression structure-containing layer and having a thickness of not less than 10 nm and not more than 30 nm.

## Claims

### Claim 1

A nitride semiconductor light-emitting element that outputs ultraviolet light, the nitride semiconductor light-emitting element comprising:
an active layer comprising a quantum well structure that generates the ultraviolet light;
a dislocation suppression structure-containing layer being formed on the active layer and comprising a dislocation suppression structure that stops or bends a dislocation from the active layer; and
a p-type contact layer being formed on the dislocation suppression structure-containing layer and having a thickness of not less than 10 nm and not more than 30 nm;
wherein the dislocation suppression structure comprises a silicon-containing compound.

### Claim 2 (depends on 1)

The nitride semiconductor light-emitting element according to claim 1, wherein the dislocation suppression structure comprises a plurality of dislocation suppression portions that are scattered lengthwise and crosswise in directions orthogonal to a stacking direction.

### Claim 3 (depends on 2)

The nitride semiconductor light-emitting element according to claim 2, wherein each of the plurality of dislocation suppression portions comprises a V-pit.

### Claim 4 (depends on 2)

The nitride semiconductor light-emitting element according to claim 2, wherein each of the plurality of dislocation suppression portions has a trapezoidal cross-sectional shape with a narrow end on the active layer-side, or a triangular cross-sectional shape with an apex on the active layer-side, when viewed in a direction orthogonal to the stacking direction.

### Claim 5 (depends on 2)

The nitride semiconductor light-emitting element according to claim 2, wherein a height of each of the plurality of dislocation suppression portions in the stacking direction is not less than 5 nm and not more than 50 nm.

### Claim 6 (depends on 2)

The nitride semiconductor light-emitting element according to claim 2, wherein a width of each of the plurality of dislocation suppression portions in a direction orthogonal to the stacking direction is not less than 5 nm and not more than 200 nm.

### Claim 7 (depends on 2)

The nitride semiconductor light-emitting element according to claim 2, wherein a separation distance between each of the plurality of dislocation suppression portions and the active layer in the stacking direction is not less than 0 nm and not more than 100 nm.

### Claim 8 (depends on 1)

The nitride semiconductor light-emitting element according to claim 1, wherein the dislocation suppression structure is formed away from the active layer.

### Claim 9 (depends on 1)

The nitride semiconductor light-emitting element according to claim 1, wherein in a Si concentration distribution along the stacking direction in the dislocation suppression structure-containing layer, there is a concentration peak that is higher than that in other parts of the dislocation suppression structure-containing layer, wherein the Si concentration at the concentration peak is not less than 1×1018 [atoms/cm3] and not more than 1×1020 [atoms/cm3].

### Claim 10 (depends on 9)

The nitride semiconductor light-emitting element according to claim 9,
wherein in an Mg concentration distribution along the stacking direction in the dislocation suppression structure-containing layer, there is a concentration peak that is higher than that in other parts of the dislocation suppression structure-containing layer, wherein the Mg concentration at the concentration peak is not less than 5×1018 [atoms/cm3] and not more than 5×1020 [atoms/cm3].