# US 12,009,446 B2 · Solar cell, method for producing same and solar cell module

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 12,009,446 B2
- Document ID: US12009446B2
- Status: Granted
- Kind: B2
- Application number: 17/483,746
- Filed: 2021-09-23
- Published: 2023-03-02
- Granted: 2024-06-11
- Earliest claimed: 2021-08-26
- Assignees: Shanghai Jinko Green Energy Enterprise Management Co., Ltd.; Zhejiang Jinko Solar Co., Ltd.
- Applicants: Shanghai Jinko Green Energy Enterprise Management Co., Ltd.; Zhejiang Jinko Solar Co., Ltd.
- Inventors: Ding Yu; Wenqi Li; Shijie Zhao; Xiaowen Zhang; Jialei Chai; Xinyu Zhang; Hao Jin; Jie Yang
- Web page: https://patentgrep.com/patent/US12009446B2

## CPC

- H10F 19/80: Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
- H10F 77/311: {for photovoltaic cells}
- H10F 10/14: Photovoltaic cells having only PN homojunction potential barriers
- H10F 71/121: {The active layers comprising only Group IV materials}
- H10F 71/1224: {comprising microcrystalline silicon}
- H10F 71/129: {Passivating}
- H10F 77/122: comprising only Group IV materials
- H10F 77/315: {the coatings being antireflective or having enhancing optical properties}
- H10F 77/484: {Refractive light-concentrating means, e.g. lenses}
- H10F 77/707: {of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate}
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

A solar cell, a method for producing a solar cell and a solar cell module are provided. The solar cell includes: a substrate having a front surface and a rear surface opposite to the front surface; a first passivation layer, a second passivation layer and a third passivation layer sequentially formed on the front surface and in a direction away from the front surface; wherein the first passivation layer includes a dielectric material; the second passivation layer includes a first silicon nitride SimNn material, and a ratio of n/m is 0.5˜1; the third passivation layer includes a silicon oxynitride SiOiNj material, and a ratio of j/i is 0.1˜0.6; and a tunneling oxide layer and a doped conductive layer sequentially formed on the rear surface and in a direction away from the rear surface, wherein the doped conductive layer and the substrate have a doping element of a same conductivity type.

## Claims

### Claim 1

A solar cell, comprising:
a substrate having a front surface and a rear surface opposite to the front surface;
a first passivation layer, a second passivation layer and a third passivation layer sequentially formed on the front surface and in a direction away from the front surface; wherein the first passivation layer includes a dielectric material; the second passivation layer includes a first silicon nitride SimNn material, and a ratio of n/m is 0.5˜1; the third passivation layer includes a silicon oxynitride SiOiNj material, and a ratio of j/i is 0.1˜0.6; and
a tunneling oxide layer and a doped conductive layer sequentially formed on the rear surface and in a direction away from the rear surface, wherein the doped conductive layer and the substrate have doping elements of a same conductivity type;
wherein the dielectric material is an aluminum oxide AlxOy material, and a ratio of y/x is 1.1˜1.5; and
wherein the ratios y/x, n/m and j/i are atomic ratios;
wherein the solar cell further comprises a fourth passivation layer formed on a side of the doped conductive layer facing away from the substrate, the fourth passivation layer includes a second silicon nitride SiaNb material, and a ratio of a/b is 3.5˜6.8; and
wherein the fourth passivation layer includes a plurality of sub-layers, and refractive indices of the plurality of sub-layers gradually decrease in a direction from the rear surface toward the doped conductive layer.

### Claim 2 (depends on 1)

The solar cell according to claim 1, wherein the first passivation layer has a thickness of 3 nm˜10 nm in a direction perpendicular to the front surface.

### Claim 3 (depends on 1)

The solar cell according to claim 1, wherein the second passivation layer has a thickness of 40 nm˜60 nm in a direction perpendicular to the front surface.

### Claim 4 (depends on 1)

The solar cell according to claim 1, wherein the third passivation layer has a thickness of 20 nm˜50 nm in a direction perpendicular to the front surface.

### Claim 5 (depends on 1)

The solar cell according to claim 1, wherein a second refractive index of the second passivation layer is greater than both a first refractive index of the first passivation layer and a third refractive index of the third passivation layer.

### Claim 6 (depends on 5)

The solar cell according to claim 5, wherein the first passivation layer has a refractive index of 1.6˜1.7, the second passivation layer has a refractive index of 1.9˜2.2, and the third passivation layer has a refractive index of 1.45˜1.8.

### Claim 7 (depends on 1)

The solar cell according to claim 1, wherein the fourth passivation layer has a refractive index of 2.04˜2.2, and the fourth passivation layer has a thickness of 60 nm˜100 nm in a direction perpendicular to the rear surface.

### Claim 8 (depends on 1)

The solar cell according to claim 1, wherein the first passivation layer further includes a silicon oxide material; and the silicon oxide material is embedded between the substrate and the dielectric material.

### Claim 9 (depends on 1)

The solar cell according to claim 1, wherein the substrate is an N-type semiconductor substrate; the doped conductive layer is at least one of an N-type doped polycrystalline silicon layer, an N-type doped microcrystalline silicon layer and an N-type doped amorphous silicon layer.

### Claim 10

A solar cell module, comprising:
at least one solar cell string each formed by connecting a plurality of the solar cells;
a packaging film configured to cover a surface of each of the at least one solar cell string; and
a cover plate configured to cover a surface of the packaging film away from the at least one solar cell string;
wherein at least one solar cell of the plurality of the solar cells includes:
a substrate having a front surface and a rear surface opposite to the front surface;
a first passivation layer, a second passivation layer and a third passivation layer sequentially formed on the front surface and in a direction away from the front surface; wherein the first passivation layer includes a dielectric material; the second passivation layer includes a first silicon nitride SimNn material, and a ratio of n/m is 0.5˜1; the third passivation layer includes a silicon oxynitride SiOiNj material, and a ratio of j/i is 0.1˜0.6; and
a tunneling oxide layer and a doped conductive layer sequentially formed on the rear surface and in a direction away from the rear surface, wherein the doped conductive layer and the substrate have doping elements of a same conductivity type;
wherein the dielectric material is an aluminum oxide AlxOy material, and a ratio of y/x is 1.1˜1.5; and
wherein the ratios y/x, n/m and j/i are atomic ratios;
wherein the solar cell further comprises a fourth passivation layer formed on a side of the doped conductive layer facing away from the substrate, the fourth passivation layer includes a second silicon nitride SiaNb material, and a ratio of a/b is 3.5˜6.8; and
wherein the fourth passivation layer includes a plurality of sub-layers, and refractive indices of the plurality of sub-layers gradually decrease in a direction from the rear surface toward the doped conductive layer.

### Claim 11 (depends on 10)

The solar cell module according to claim 10, wherein a second refractive index of the second passivation layer is greater than both a first refractive index of the first passivation layer and a third refractive index of the third passivation layer.

### Claim 12

A method for producing a solar cell, comprising:
providing a substrate having a front surface and a rear surface opposite to the front surface;
forming a first passivation layer, a second passivation layer and a third passivation layer sequentially on the front surface and in a direction away from the front surface; wherein the first passivation layer includes a dielectric material; the second passivation layer includes a first silicon nitride SimNn material, and a ratio of n/m is 0.5˜1; the third passivation layer includes a silicon oxynitride SiONiNj material, and a ratio of j/i is 0.1˜0.6;
forming a tunneling oxide layer and a doped conductive layer sequentially on the rear surface and in a direction away from the rear surface, wherein the doped conductive layer and the substrate have doping elements of a same conductivity type; and
forming a fourth passivation layer on a side of the doped conductive layer facing away from the substrate, wherein the fourth passivation layer includes a second silicon nitride SiaNb material, and a ratio of a/b is 3.5˜6.8, and wherein the fourth passivation layer includes a plurality of sub-layers, and refractive indices of the plurality of sub-layers gradually decrease in a direction from the rear surface toward the doped conductive layer;
wherein the dielectric material is an aluminum oxide AlxOy material, and a ratio of y/x is 1.1˜1.5; and
wherein the ratios y/x, n/m and j/i are atomic ratios.

### Claim 13 (depends on 12)

The method for producing the solar cell according to claim 12, wherein the first passivation layer is formed by an atomic layer deposition process; precursors of the atomic layer deposition process include trimethyl aluminum and water; and a deposition temperature of the atomic layer deposition process is 150° C.˜250° C.

### Claim 14 (depends on 12)

The method for producing the solar cell according to claim 12, wherein after the first passivation layer is formed, the method further comprising: performing an annealing process on the first passivation layer, wherein a process temperature of the annealing process is 450° C.˜550° C., and a process duration of the annealing process is greater than or equal to 10 minutes.

### Claim 15 (depends on 12)

The method for producing the solar cell according to claim 12, wherein the second passivation layer is formed by a first plasma-enhanced chemical vapor deposition process, wherein precursors of the first plasma-enhanced chemical vapor deposition process include silane and ammonia gas; a flow ratio of the ammonia gas to the silane is 4˜15; and a pulse power per unit area of the first plasma-enhanced chemical vapor deposition process is 30˜40 mW/cm2.

### Claim 16 (depends on 12)

The method for producing the solar cell according to claim 12, wherein the third passivation layer is formed by a second plasma-enhanced chemical vapor deposition process, wherein precursors of the second plasma-enhanced chemical vapor deposition process include silane, nitrous oxide and ammonia gas; a flow ratio of the silane to the nitrous oxide is not less than 1/10; and a pulse power per unit area of the second plasma-enhanced chemical vapor deposition process is 25˜40 mW/cm2.