# US 12,009,440 B2 · Doped region structure and solar cell comprising the same, cell assembly, and photovoltaic system

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- Number: US 12,009,440 B2
- Document ID: US12009440B2
- Status: Granted
- Kind: B2
- Application number: 18/374,819
- Filed: 2023-09-29
- Published: 2024-01-18
- Granted: 2024-06-11
- Earliest claimed: 2021-07-22
- Assignees: Solarlab Aiko Europe GmbH
- Applicants: Solarlab Aiko Europe GmbH
- Inventors: Gang Chen; Wenli Xu; Kaifu Qiu; Yongqian Wang; Xinqiang Yang
- Web page: https://patentgrep.com/patent/US12009440B2

## CPC

- H10F 77/219: {Arrangements for electrodes of back-contact photovoltaic cells}
- H10F 77/311: {for photovoltaic cells}
- H10F 10/165: the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
- H10F 10/166: the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
- H10F 77/1228: {porous silicon}
- H10F 77/147: {Shapes of bodies}
- H10F 77/703: {of the semiconductor bodies, e.g. textured active layers}
- Y02E 10/547: Monocrystalline silicon PV cells
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

## Abstract

The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.

## Claims

### Claim 1

A cell assembly, comprising:
a silicon substrate;
a first doped region and a second doped region, alternately disposed on a back side of the silicon substrate and having opposite polarities;
a first dielectric layer, disposed on a front side of the silicon substrate;
a second dielectric layer, wherein an orthogonal projection of at least a portion of the second dielectric layer onto the silicon substrate is disposed between orthogonal projections of the first doped region and the second doped region along a lateral direction of the silicon substrate; and
a first conductive layer and a second conductive layer, respectively disposed in the first doped region and the second doped region;
wherein:
the first doped region comprises a first doped layer, a passivation layer, and a second doped layer;
the first doped layer of the first doped region is a part of the silicon substrate;
the passivation layer of the first doped region is provided on the first doped layer of the first doped region; and
the second doped layer of the first doped region is provided on the passivation layer of the first doped region, and is connected to the first doped layer of the first doped region through the passivation layer of the first doped region.

### Claim 2 (depends on 1)

The cell assembly according to claim 1, wherein a part of the first doped layer of the first doped region is located in the passivation layer of the first doped region and is connected to the second doped layer of the first doped region.

### Claim 3 (depends on 1)

The cell assembly according to claim 1, wherein,
a part of the first doped layer of the first region is located in the passivation layer of the first doped region;
a part of the second doped layer of the first region is located in the passivation layer of the first doped region; and
the part of the first doped layer of the first region is connected to the part of the second doped layer of the first region in the passivation layer of the first doped region.

### Claim 4 (depends on 1)

The cell assembly according to claim 1, wherein the passivation layer of the first doped region comprises a hole region.

### Claim 5 (depends on 4)

The cell assembly according to claim 4, wherein the second doped layer of the first doped region is connected to the first doped layer of the first doped region through the hole region in the passivation layer of the first doped region.

### Claim 6 (depends on 4)

The cell assembly according to claim 4, wherein, a part of the first doped layer of the first doped region is located in the hole region and is connected to the second doped layer of the first doped region.

### Claim 7 (depends on 4)

The cell assembly according to claim 4, wherein, a part of the first doped layer of the first doped region and a part of the second doped layer of the first doped region are located and interconnected in a same hole in the hole region.

### Claim 8 (depends on 4)

The cell assembly according to claim 4, a ratio of an area of the hole region to an entire area of the passivation layer of the first doped region is less than 20%.

### Claim 9 (depends on 3)

The cell assembly according to claim 3, wherein an average pore size of holes in the hole region is less than 20 μm.

### Claim 10 (depends on 9)

The cell assembly according to claim 9, wherein pore sizes of 90% of all of the holes are less than 20 μm.

### Claim 11 (depends on 1)

The cell assembly according to claim 1, wherein a thickness of the passivation layer of the first doped region is in a range of 0.5-10 nm.

### Claim 12 (depends on 1)

The cell assembly according to claim 1, wherein a thickness of the passivation layer of the first doped region is in a range of 0.5-10 nm.

### Claim 13 (depends on 1)

The cell assembly according to claim 1, wherein a doping concentration of the first doped layer of the first doped region is between a doping concentration of the silicon substrate and a doping concentration of the second doped layer of the first doped region.

### Claim 14 (depends on 1)

The cell assembly according to claim 1, wherein a doping concentration of the first doped layer of the first doped region is smaller than a doping concentration of the second doped layer of the first doped region.

### Claim 15 (depends on 1)

The cell assembly according to claim 1, wherein the first doped layer of the first doped region and the second doped layer of the first doped region have a same doping polarity.

### Claim 16 (depends on 1)

The cell assembly according to claim 1, wherein the first doped layer of the first doped region and the second doped layer of the first doped region have a same kind of dopant.

### Claim 17 (depends on 1)

The cell assembly according to claim 1, wherein the silicon substrate is a monocrystalline silicon wafer doped with a group-III or group-V element.

### Claim 18 (depends on 1)

The cell assembly according to claim 1, wherein the first doped layer of the first doped region is a monocrystalline silicon wafer doped with a group-V element.

### Claim 19 (depends on 1)

The cell assembly according to claim 1, wherein the second doped layer of the first doped region comprises a polysilicon doped layer or an amorphous silicon doped layer, or a combination thereof.

### Claim 20

A cell assembly comprising: a silicon substrate;
a first doped region and a second doped region, alternately disposed on a back side of the silicon substrate and having opposite polarities;
a first dielectric layer, disposed on a front side of the silicon substrate;
a second dielectric layer, disposed between the first doped region and the second doped region; and
a first conductive layer and a second conductive layer, respectively disposed in the first doped region and the second doped region;
wherein:
the first doped region comprises a first doped layer, a passivation layer, and a second doped layer; the first doped layer of the first doped region is a part of the silicon substrate; the passivation layer of the first doped region is provided on the first doped layer of the first doped region; and the second doped layer of the first doped region is provided on the passivation layer of the first doped region, and is connected to the first doped layer of the first doped region through the passivation layer of the first doped region; and
the second doped region comprises a first doped layer of the second doped region, a passivation layer of the second doped region, and a second doped layer of the second doped region.

### Claim 21 (depends on 20)

The cell assembly according to claim 20, wherein the first doped layer of the second doped region is a monocrystalline silicon wafer doped with a group-III or group-V element.

### Claim 22 (depends on 20)

The cell assembly according to claim 20, wherein the second doped layer of the second doped region comprises a polysilicon doped layer or an amorphous silicon doped layer, or a combination thereof.

### Claim 23 (depends on 20)

The cell assembly according to claim 20, wherein the first doped region is a P-type doped region, the second doped region is a N-type doped region, and a thickness of the passivation layer of the first doped region is greater than a thickness of the passivation layer of the second doped region.

### Claim 24 (depends on 20)

The cell assembly according to claim 20, further comprising a trench provided between the first doped region and the second doped region, wherein the second dielectric layer is provided on the trench, and the trench is configured to separate the first doped region from the second doped region.

### Claim 25 (depends on 24)

The cell assembly according to claim 24, wherein a surface shape of the trench in contact with the silicon substrate further have a rough texture structure.

### Claim 26 (depends on 20)

The cell assembly according to claim 20, wherein grooves spaced apart are provided on the back side of the silicon substrate, and the first doped region and the second doped region are alternately disposed in the grooves.

### Claim 27 (depends on 20)

The cell assembly according to claim 20, wherein, grooves spaced apart are provided on the back side of the silicon substrate; one of the first doped region and the second doped region is disposed in one of the grooves; and the other of the first doped region and the second doped region is disposed outside the grooves.

### Claim 28 (depends on 1)

The cell assembly according to claim 1, wherein the first dielectric layer and the second dielectric layer comprises a silicon oxide layer; a thickness of the silicon oxide layer in the first dielectric layer is less than 40 nm; and/or a thickness of the silicon oxide layer in the second dielectric layer is less than 25 nm.

### Claim 29 (depends on 1)

The cell assembly according to claim 1, wherein a junction depth of the first doped layer of the first doped region is less than 1.5 μm.

### Claim 30

A solar cell, comprising:
a silicon substrate;
a first doped region and a second doped region, alternately disposed on a back side of the silicon substrate and having opposite polarities;
a first dielectric layer, disposed on a front side of the silicon substrate;
a second dielectric layer, wherein an orthogonal projection of at least a portion of the second dielectric layer onto the silicon substrate is disposed between orthogonal projections of the first doped region and the second doped region along a lateral direction of the silicon substrate; and
a first conductive layer and a second conductive layer, respectively disposed in the first doped region and the second doped region;
wherein:
the first doped region comprises a first doped layer, a passivation layer, and a second doped layer;
the first doped layer of the first doped region is a part of the silicon substrate;
the passivation layer of the first doped region is provided on the first doped layer of the first doped region;
the second doped layer of the first doped region is provided on the passivation layer of the first doped region, and is connected to the first doped layer of the first doped region through the passivation layer of the first doped region.