# US 12,009,432 B2 · Transistor and display device

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- Number: US 12,009,432 B2
- Document ID: US12009432B2
- Status: Granted
- Kind: B2
- Application number: 17/679,413
- Filed: 2022-02-24
- Published: 2022-09-08
- Granted: 2024-06-11
- Earliest claimed: 2021-03-05
- Assignees: Semiconductor Energy Laboratory Co., Ltd.
- Applicants: Semiconductor Energy Laboratory Co., Ltd.
- Inventors: Hitoshi Kunitake; Yasuhiro Jinbo; Naoki Okuno; Masahiro Takahashi; Tomonori Nakayama
- Web page: https://patentgrep.com/patent/US12009432B2

## CPC

- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D 30/6758: {characterised by the insulating substrates}
- G09G 3/32: semiconductive, e.g. using light-emitting diodes [LED]
- H10D 30/6734: {having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs}
- H10D 30/675: {Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium}
- H10D 87/00: Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
- G09G 3/3233: with pixel circuitry controlling the current through the light-emitting element
- G09G 2300/0417: Special arrangements specific to the use of low carrier mobility technology
- G09G 2300/0426: Layout of electrodes and connections
- G09G 2300/0842: forming a memory circuit, e.g. a dynamic memory with one capacitor
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- G09G: ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION (arrangements for transferring data between digital computers and displays G06F3/14; static indicating arrangements comprising an association of a number of separate sources or light control cells G09F9/00; static indicating arrangements comprising integral associations of a number of light sources H01J, H01K, H10H, H05B33/12; scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission, details thereof H04N1/00)

## Abstract

A transistor whose characteristic degradation due to stray light is small is provided. The transistor includes a first insulator, a second insulator over the first insulator, a metal oxide over the second insulator, a first and a second conductor over the metal oxide, a third insulator over the first insulator, the second insulator, the metal oxide, the first conductor, and the second conductor, a fourth insulator over the metal oxide, a fifth insulator over the fourth insulator, and a third conductor over the fifth insulator. The third insulator has an opening to overlap with a region between the first conductor and the second conductor. The fourth insulator, the fifth insulator, and the third conductor are positioned in the opening. The metal oxide has a bandgap greater than or equal to 3.3 eV. The transistor has Vsh higher than or equal to −0.3 V.

## Claims

### Claim 1

A display device comprising:
a first to a fourth wiring;
a light-emitting element;
a first capacitor;
a second capacitor; and
a first to a fourth transistor,
wherein one of a source and a drain of the first transistor is electrically connected to the first wiring,
wherein the other of the source and the drain of the first transistor is electrically connected to one electrode of the first capacitor,
wherein a gate of the first transistor is electrically connected to the second wiring,
wherein one of a source and a drain of the second transistor is electrically connected to an anode of the light-emitting element,
wherein the other of the source and the drain of the second transistor is electrically connected to the third wiring,
wherein a gate of the second transistor is electrically connected to the one electrode of the first capacitor,
wherein one of a source and a drain of the third transistor is electrically connected to the fourth wiring,
wherein the other of the source and the drain of the second transistor is electrically connected to the anode of the light-emitting element,
wherein one of a source and a drain of the fourth transistor is electrically connected to the fourth wiring,
wherein the other of the source and the drain of the fourth transistor is electrically connected to the one electrode of the first capacitor,
wherein the other electrode of the first capacitor is electrically connected to the anode of the light-emitting element,
wherein one electrode of the second capacitor is electrically connected to the one electrode of the first capacitor,
wherein the other electrode of the second capacitor is electrically connected to the third wiring,
wherein the first transistor comprises a metal oxide in a channel formation region, and
wherein Vsh in the first transistor is greater than or equal to −0.3 V.

### Claim 2 (depends on 1)

The display device according to claim 1,
wherein the metal oxide comprises In, Ga, and Zn, and
wherein an atomic ratio of In to Ga and Zn (In:Ga:Zn) is 2:6:5 or a vicinity thereof.

### Claim 3

A transistor comprising a metal oxide in a channel formation region, comprising:
a first insulator;
a second insulator over the first insulator;
the metal oxide over the second insulator;
a first conductor and a second conductor over the metal oxide;
a third insulator over the first insulator, the second insulator, the metal oxide, the first conductor, and the second conductor,
a fourth insulator over the metal oxide;
a fifth insulator over the fourth insulator; and
a third conductor over the fifth insulator,
wherein the third insulator comprises an opening to overlap with a region between the first conductor and the second conductor,
wherein the fourth insulator, the fifth insulator, and the third conductor are positioned in the opening,
wherein a bandgap of the metal oxide is greater than or equal to 3.3 eV, and
wherein Vsh in the first transistor is greater than or equal to −0.3 V.

### Claim 4 (depends on 3)

The transistor according to claim 3,
wherein the metal oxide comprises In, Ga, and Zn, and
wherein an atomic ratio of In to Ga and Zn (In:Ga:Zn) is 2:6:5 or a vicinity thereof.

### Claim 5 (depends on 4)

A display device comprising:
the transistor according to claim 4; and
a light-emitting element electrically connected to the transistor,
wherein the light-emitting element comprises a lower electrode, an upper electrode, and a light-emitting layer between the lower electrode and the upper electrode, and
wherein a side surface of the lower electrode and a side surface of the light-emitting layer are aligned or substantially aligned with each other in a cross-sectional observation of the light-emitting element.

### Claim 6 (depends on 3)

The transistor according to claim 3,
wherein the fifth insulator comprises silicon and oxygen, and
wherein the fifth insulator comprises a region in which a nitrogen concentration obtained by SIMS is lower than or equal to 5×1019 atoms/cm3.

### Claim 7 (depends on 6)

A display device comprising:
the transistor according to claim 6; and
a light-emitting element electrically connected to the transistor,
wherein the light-emitting element comprises a lower electrode, an upper electrode, and a light-emitting layer between the lower electrode and the upper electrode, and
wherein a side surface of the lower electrode and a side surface of the light-emitting layer are aligned or substantially aligned with each other in a cross-sectional observation of the light-emitting element.

### Claim 8 (depends on 3)

A display device comprising:
the transistor according to claim 3; and
a light-emitting element electrically connected to the transistor,
wherein the light-emitting element comprises a lower electrode, an upper electrode, and a light-emitting layer between the lower electrode and the upper electrode, and
wherein a side surface of the lower electrode and a side surface of the light-emitting layer are aligned or substantially aligned with each other in a cross-sectional observation of the light-emitting element.

### Claim 9 (depends on 8)

The display device according to claim 8, further comprising an insulator between the light-emitting element and an adjacent light-emitting element,
wherein the insulator comprises at least one of an inorganic material and an organic material.