# US 12,009,416 B2 · Heterojunction electronic component comprising a field plate and a p-doped floating region

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- Number: US 12,009,416 B2
- Document ID: US12009416B2
- Status: Granted
- Kind: B2
- Application number: 17/324,612
- Filed: 2021-05-19
- Published: 2021-11-25
- Granted: 2024-06-11
- Earliest claimed: 2020-05-19
- Assignees: Commissariat A L'energie Atomique Et Aux Energies Alternatives
- Applicants: Commissariat à L'energie Atomique Et Aux Energies Alternatives
- Inventors: Florian Rigaud-Minet
- Web page: https://patentgrep.com/patent/US12009416B2

## CPC

- H10D 8/60: Schottky-barrier diodes
- H10D 30/475: {having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs}
- H10D 62/106: {having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions}
- H10D 62/824: comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
- H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN}
- H10D 64/111: {Field plates}
- H10D 64/112: {comprising multiple field plate segments}
- H10D 64/518: {characterised by their lengths or sectional shapes}
- H10D 64/513: {within recesses in the substrate, e.g. trench gates, groove gates or buried gates}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A heterojunction electronic component includes a substrate; a heterojunction including a channel layer arranged on the substrate and a barrier layer arranged on the channel layer; a passivation layer arranged on the barrier layer; a field plate separated from the barrier layer by a portion of the passivation layer; and a floating region made from a p-doped semiconductor material, located in the barrier layer in vertical alignment with a flank of the field plate, the floating region having a thickness less than that of the barrier layer.

## Claims

### Claim 1

A heterojunction electronic component comprising:
a substrate;
a heterojunction comprising a channel layer arranged on the substrate and a barrier layer arranged on the channel layer, the barrier layer having a top surface and a recess arranged in said top surface;
a passivation layer arranged on the top surface of the barrier layer;
a field plate separated from the barrier layer by a portion of the passivation layer,
the recess in the barrier layer being in vertical alignment with a flank of the field plate, and
a floating region made from a p-doped semiconductor material, located in the recess of the barrier layer, and having a total thickness that extends up to the top surface of the barrier layer, the floating region being in the vertical alignment with the flank of the field plate, the total thickness of the floating region being less than that of the barrier layer.

### Claim 2 (depends on 1)

The heterojunction electronic component according to claim 1, wherein the floating region has a concentration in p type doping impurities comprised between 1.1018 cm−3 and 2.1019 cm−3.

### Claim 3 (depends on 1)

The heterojunction electronic component according to claim 1, wherein the floating region is centered with respect to the flank of the field plate.

### Claim 4 (depends on 1)

The heterojunction electronic component according to claim 1, wherein the floating region has a width (LFZ) less than twice the width (LFP) of the field plate.

### Claim 5 (depends on 1)

The heterojunction electronic component according to claim 1, comprising a plurality of field plates and a plurality of floating regions made from a p-doped semiconductor material, each floating region of the plurality of floating regions being located in the barrier layer in vertical alignment with a flank of one of the plurality of field plates.

### Claim 6 (depends on 1)

The heterojunction electronic component according to claim 1, further comprising a first electrode and a second electrode separated from the first electrode by at least a portion of the passivation layer.

### Claim 7 (depends on 6)

The heterojunction electronic component according to claim 6, wherein the field plate forms an extension of the first electrode.

### Claim 8 (depends on 6)

The heterojunction electronic component according to claim 6, wherein the heterojunction electronic component is a diode and wherein the first electrode is an anode and the second electrode is a cathode.

### Claim 9 (depends on 6)

The heterojunction electronic component according to claim 6, wherein the heterojunction electronic component is a transistor and wherein the first electrode is a gate electrode and the second electrode is a drain electrode.

### Claim 10 (depends on 1)

The heterojunction electronic component according to claim 1, wherein the barrier layer is comprised of an unintentionally doped semiconductor material.

### Claim 11 (depends on 1)

The heterojunction electronic component according to claim 1, wherein the floating region is in direct contact with the passivation layer.