Superconductor gate semiconductor field-effect transistor
AssigneeInternational Business Machines Corporation
InventorsEunjung Cha, Cezar Bogdan Zota
Life of this patent
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Abstract
A transistor structure, includes a buffer layer and a quantum well channel layer on top of the buffer layer. There is a barrier layer on top of the channel layer. There is a drain contact on a channel stack. A source contact is on a channel stack. A gate structure is located between the source contact and drain contact, comprising: an active gate portion having a bottom surface in contact with a bottom surface of the source and the drain contacts. A superconducting portion of the gate structure is in contact with, and adjacent to, an upper part of the active gate portion.
Claims8
A superconductor transistor structure, comprising:
- a buffer layer;
- a quantum well channel layer on top of the buffer layer;
- a barrier layer on top of the channel layer;
- a drain contact on a channel stack;
- a source contact on a channel stack;
- and
- a superconducting gate structure located between the source contact and drain contact, comprising:
- an active gate portion having a bottom surface coplanar with a bottom surface of the source and the drain contacts;
- discrete superconducting portions in contact with, and adjacent to, an upper part of the active gate portion,
- wherein the source and drain contacts each have a tapered shape facing the gate.
Dependencies are inferred from the claim text.