# US 12,009,396 B2 · Semiconductor device with multichannel heterostructure and manufacturing method thereof

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- Number: US 12,009,396 B2
- Document ID: US12009396B2
- Status: Granted
- Kind: B2
- Application number: 17/266,637
- Filed: 2020-04-22
- Published: 2022-04-14
- Granted: 2024-06-11
- Earliest claimed: 2020-04-22
- Assignees: Innoscience (Zhuhai) Technology Co., Ltd.
- Applicants: Innoscience (Zhuhai) Technology Co., Ltd.
- Inventors: Anbang Zhang; King Yuen Wong; Hao Li; Haoning Zheng; Jian Wang
- Web page: https://patentgrep.com/patent/US12009396B2

## CPC

- H10D 64/256: {for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies (source or drain electrodes of TFTs H10D30/673)}
- H10D 8/60: Schottky-barrier diodes
- H10D 30/475: {having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs}
- H10D 30/637: {Lateral IGFETs having no inversion channels, e.g. buried channel lateral IGFETs, normally-on lateral IGFETs or depletion-mode lateral IGFETs}
- H10D 62/824: comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
- H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN}
- H10D 64/251: {Source or drain electrodes for field-effect devices}
- H10D 30/6738: {Schottky barrier electrodes}
- H10D 30/675: {Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium}
- H10D 64/62: Electrodes ohmically coupled to a semiconductor
- H10D 64/64: Electrodes comprising a Schottky barrier to a semiconductor
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A semiconductor device and a method for manufacturing the same are provided in this disclosure. The semiconductor device includes a semiconductor heterostructure layer. The semiconductor heterostructure layer includes alternating first semiconductor material layers and second semiconductor material layers. Two-dimensional hole gas (2DHG) may be generated between each first semiconductor material layer and adjacent second semiconductor material layer. A conductive structure, including a plurality of conductive fingers extends from a surface of the semiconductor heterostructure layer into the semiconductor heterostructure layer. The plurality of conductive fingers are arranged in a direction substantially parallel to the surface. The lengths of the plurality of conductive fingers progressively increase in that direction so that an end portion of each conductive finger is respectively positioned in a different first semiconductor material layer and is in contact with the 2DHG.

## Claims

### Claim 1

A semiconductor device, comprising:
a semiconductor heterostructure layer, comprising alternating first semiconductor material layers and second semiconductor material layers, wherein a two-dimensional hole gas (2DHG) is generated between each first semiconductor material layer and its above adjacent second semiconductor material layer; and
a conductive structure, comprising a plurality of conductive fingers extending from a surface of the semiconductor heterostructure layer into the semiconductor heterostructure layer, wherein the plurality of conductive fingers are arranged in a first direction substantially parallel to the surface, and wherein lengths of the plurality of conductive fingers progressively increase in the first direction so that an end portion of each conductive finger is respectively positioned in a different first semiconductor material layer and is in contact with the 2DHG, and widths of the plurality of conductive fingers gradually increase in the first direction.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, wherein a combination of the first semiconductor material layers and the second semiconductor material layers is one of the following: a combination of AlGaN and GaN, a combination of InAlN and GaN, a combination of AIN and GaN, and a combination of InAlGaN and GaN.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1, wherein the conductive structure comprises a single or multiple metal material layer.

### Claim 4 (depends on 3)

The semiconductor device according to claim 3, wherein the single or multiple metal material layer comprises a titanium (Ti) layer, wherein the titanium (Ti) layer is in contact with the semiconductor heterostructure layer.

### Claim 5 (depends on 1)

The semiconductor device according to claim 1, wherein a number of layers of the 2DHGs between the first semiconductor material layers and the second semiconductor material layers is in a range of 2 to 10.

### Claim 6 (depends on 1)

The semiconductor device according to claim 1, wherein the lengths of the conductive fingers are in a range of 1 nm to 1000 nm.

### Claim 7 (depends on 6)

The semiconductor device according to claim 6, wherein the lengths of the conductive fingers are in a range of 1 nm to 300 nm.

### Claim 8 (depends on 1)

The semiconductor device according to claim 1, wherein the widths of the conductive fingers are in a range of 5 nm to 800 nm.

### Claim 9 (depends on 8)

The semiconductor device according to claim 8, wherein the widths of the conductive fingers are in a range of 5 nm to 200 nm.