Tunnel field effect transistor and ternary inverter comprising same
AssigneeUnist (Ulsan National Institute of Science and Technology)
InventorsKyung Rok Kim, Ji Won Chang, Jae Won Jeong, Youngeun Choi, Wooseok Kim
Life of this patent
Estimating the term…
Abstract
A tunnel field effect transistor includes a constant current formation layer, a source region and a drain region provided on the constant current formation layer, a channel layer provided between the source region and the drain region, a gate electrode provided on the channel layer, and a gate insulating film provided between the gate electrode and the channel layer, wherein the source region and the drain region have different conductivity types, and the constant current formation layer forms a constant current between the drain region and the constant current formation layer.
Claims20
A tunnel field effect transistor comprising:
- a constant current formation layer;
- a source region and a drain region provided on the constant current formation layer;
- a channel layer provided between the source region and the drain region;
- a gate electrode provided on the channel layer;
- and
- a gate insulating film provided between the gate electrode and the channel layer,
- wherein the source region and the drain region have different conductivity types, and
- the constant current formation layer forms a constant current between the drain region and the constant current formation layer.
A tunnel field effect transistor comprising:
- a fin structure extending in a first direction;
- a gate electrode extending in a second direction intersecting with the first direction;
- and
- a gate insulating film provided between the fin structure and the gate electrode,
- wherein the fin structure comprises a constant current formation layer provided at a lower portion of the fin structure and a source region and a drain region provided on the constant current formation layer,
- the source region and the drain region have different conductivity types, and
- the constant current formation layer forms a constant current between the drain region and the constant current formation layer.
A ternary inverter comprising:
- a first well region and a second well region, a first constant current formation layer and a second constant current formation layer provided on the first well region and the second well region, respectively, a first source region provided on the first constant current formation layer, a first channel layer, a first drain region, a second source region provided on the second constant current formation layer, a second channel layer, a second drain region, and a first gate electrode and a second gate electrode provided on the first channel layer and the second channel layer, respectively,
- wherein the first source region and the first drain region have different conductivity types, and the second source region and the second drain region have different conductivity types,
- wherein the first constant current formation layer forms a first constant current between the first drain region and the first constant current formation layer, and the second constant current formation layer forms a second constant current between the second drain region and the second constant current formation layer.
Dependencies are inferred from the claim text.