# US 12,009,388 B2 · Semiconductor device and manufacturing method thereof > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,009,388 B2 - Document ID: US12009388B2 - Status: Granted - Kind: B2 - Application number: 17/976,306 - Filed: 2022-10-28 - Published: 2023-02-23 - Granted: 2024-06-11 - Earliest claimed: 2020-05-11 - Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.; Tsmc China Company Limited - Applicants: Taiwan Semiconductor Manufacturing Co., Ltd.; Tsmc China Company Limited - Inventors: Zheng-Long Chen - Web page: https://patentgrep.com/patent/US12009388B2 ## CPC - H10D 1/042: {using deposition processes to form electrode extensions} - H10D 1/716: {having vertical extensions} - H10D 1/714: {having horizontal extensions} - H10W 20/031: {of conductive parts of the interconnections} - H10W 20/496: {Capacitor integral with wiring layers} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A method includes forming a dielectric layer on a substrate; forming a first spiral electrode, a second spiral electrode, and a spiral common electrode in the dielectric layer, the first spiral electrode extending in a first spiral path, the second spiral electrode extending in a second spiral path, and the spiral common electrode extending in a third spiral path laterally between the first and second spiral paths. ## Claims ### Claim 1 A method, comprising: forming a dielectric layer on a substrate; and forming a first spiral electrode, a second spiral electrode, and a spiral common electrode in the dielectric layer, the first spiral electrode extending in a first quadrilateral spiral path, the second spiral electrode extending in a second quadrilateral spiral path, and the spiral common electrode extending in a third quadrilateral spiral path laterally between the first and second quadrilateral spiral paths, wherein from a top view, a straight section of the first spiral electrode connecting to a spiral center of the first spiral electrode is in parallel with a straight section of the second spiral electrode connecting to a spiral center of the second spiral electrode, and the straight section of the second spiral electrode connecting to the spiral center of the second spiral electrode is in parallel with a straight section of the spiral common electrode connecting to a spiral center of the spiral common electrode. ### Claim 2 (depends on 1) The method of claim 1, wherein the first and second spiral electrodes and the spiral common electrode forma capacitor with the dielectric layer. ### Claim 3 (depends on 1) The method of claim 1, wherein the first and second spiral electrodes are anodes, and the spiral common electrode is cathode. ### Claim 4 (depends on 1) The method of claim 1, wherein the first and second spiral electrodes are cathodes, and the spiral common electrode is anode. ### Claim 5 (depends on 1) The method of claim 1, wherein the first spiral electrode is concentric with the spiral common electrode. ### Claim 6 (depends on 1) The method of claim 1, wherein the first and second spiral electrodes have a same spiral rotating direction. ### Claim 7 (depends on 1) The method of claim 1, wherein the first and second spiral electrodes have a substantially equal spacing therebetween along the first quadrilateral spiral path. ### Claim 8 (depends on 1) The method of claim 1, wherein a first distance from the spiral common electrode to the first spiral electrode is equal to a second distance from the spiral common electrode to the second spiral electrode from a cross sectional view. ### Claim 9 (depends on 1) The method of claim 1, wherein the second spiral electrode is spaced apart from the first spiral electrode. ### Claim 10 A method, comprising: forming a first spiral electrode over a substrate; and forming a second spiral electrode over the first spiral electrode, the second spiral electrode spaced apart from the first spiral electrode and overlapping the first spiral electrode, wherein a first turn of the first spiral electrode connecting to a spiral center of the first spiral electrode is free of a via thereon, and a first turn of the second spiral electrode connecting to a spiral center of the second spiral electrode is free of a via thereon. ### Claim 11 (depends on 10) The method of claim 10, further comprising: forming a third spiral electrode over the substrate and at a same level height as the first spiral electrode; and forming a fourth spiral electrode over the third spiral electrode and at a same level height as the second spiral electrode, the fourth spiral electrode spaced apart from the second and third spiral electrodes and overlapping the third spiral electrode. ### Claim 12 (depends on 11) The method of claim 11, wherein the first spiral electrode is concentric with the third spiral electrode. ### Claim 13 (depends on 11) The method of claim 11, wherein a first turn of the third spiral electrode, connecting to a spiral center of the third spiral electrode is free of a via thereon, and a first turn of the fourth spiral electrode connecting to a spiral center of the fourth spiral electrode is free of a via thereon. ### Claim 14 (depends on 10) The method of claim 10, wherein the first and second spiral electrodes have spiral hexagonal patterns from a top view. ### Claim 15 A capacitor, comprising: a first spiral electrode; a second spiral electrode in a same level height as the first spiral electrode, the second spiral electrode being concentric with the first spiral electrode, the second spiral electrode is spaced apart from the first spiral electrode; a first common electrode laterally between the first and second spiral electrodes; a third spiral electrode in a different level height than the first and second spiral electrodes; and a second common electrode in a same level height as the third spiral electrode. ### Claim 16 (depends on 15) The capacitor of claim 15, wherein the first common electrode is a spiral pattern. ### Claim 17 (depends on 15) The capacitor of claim 15, wherein the first and second spiral electrodes have a same spiral rotating direction. ### Claim 18 (depends on 15) The capacitor of claim 15, wherein from a top view, a straight section of the first spiral electrode connecting to a spiral center of the first spiral electrode is in parallel with a straight section of the second spiral electrode connecting to a spiral center of the second spiral electrode, and the straight section of the second spiral electrode connecting to the spiral center of the second spiral electrode is in parallel with a straight section of the first common electrode connecting to a spiral center of the first common electrode. ### Claim 19 (depends on 15) The capacitor of claim 15, further comprising: a fourth spiral electrode in a same level height as the third spiral electrode and the second common electrode, wherein the second common electrode is laterally between the third and fourth spiral electrodes. ### Claim 20 (depends on 15) The capacitor of claim 15, wherein the third spiral electrode is concentric with the second common electrode.