# US 12,009,382 B2 · Imaging device and electronic device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,009,382 B2 - Document ID: US12009382B2 - Status: Granted - Kind: B2 - Application number: 17/420,471 - Filed: 2019-12-19 - Published: 2022-03-17 - Granted: 2024-06-11 - Earliest claimed: 2019-01-18 - Assignees: Sony Semiconductor Solutions Corporation - Applicants: Sony Semiconductor Solutions Corporation - Inventors: Yoshiaki Masuda; Tomohiko Asatsuma - Web page: https://patentgrep.com/patent/US12009382B2 ## CPC - H10F 39/809: {of hybrid image sensors} - H04N 23/20: for generating image signals from infrared radiation only - H04N 25/70: SSIS architectures; Circuits associated therewith - H10F 39/018: {of hybrid image sensors} - H10F 39/805: {Coatings} - H10F 39/8057: {Optical shielding} - H10F 39/811: {Interconnections} - H10F 55/155: formed in, or on, a common substrate - H10F 55/255: formed in, or on, a common substrate - H10W 90/00: Package configurations - G01N 21/645: {Specially adapted constructive features of fluorimeters} - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q) ## Abstract There is provided an imaging device capable of further improving image quality of a subject, particularly a lesion portion such as cancer. There is provided an imaging device including: a first substrate including a first pixel array unit in which a plurality of pixels having at least a first photoelectric conversion unit is arranged in a two-dimensional manner, a first wiring layer, and a first support layer stacked in this order; and a second substrate including a second pixel array unit in which a plurality of pixels having at least a second photoelectric conversion unit is arranged in a two-dimensional manner, a second wiring layer, and a second support layer stacked in this order, in which the first support layer and the second support layer are bonded to each other to form a stacked structure, and at least one of the support layers includes an antireflection layer. ## Claims ### Claim 1 An imaging device comprising: a first substrate including a first pixel array unit in which a plurality of pixels having at least a first photoelectric conversion unit that performs photoelectric conversion is arranged in a two-dimensional manner, a first wiring layer, and a first support layer stacked in this order; and a second substrate including a second pixel array unit in which a plurality of pixels having at least a second photoelectric conversion unit that performs photoelectric conversion is arranged in a two-dimensional manner, a second wiring layer, and a second support layer stacked in this order, wherein the first support layer and the second support layer are bonded to each other to form a stacked structure of the first substrate and the second substrate, and at least one of the first support layer or the second support layer includes an antireflection layer. ### Claim 2 (depends on 1) The imaging device according to claim 1, wherein the antireflection layer includes a light-shielding film that shields excitation light with which a subject is irradiated and/or a transmission film that transmits fluorescence emitted from the subject by the excitation light. ### Claim 3 (depends on 2) The imaging device according to claim 2, wherein the excitation light has a wavelength of 760 nanometers±10 nanometers, and the fluorescence has a wavelength of 850 nanometers±10 nanometers. ### Claim 4 (depends on 1) The imaging device according to claim 1, wherein the first support layer includes a first antireflection layer, and the second support layer includes a second antireflection layer. ### Claim 5 (depends on 4) The imaging device according to claim 4, wherein the first antireflection layer includes a light-shielding film that shields excitation light with which a subject is irradiated and/or a transmission film that transmits fluorescence emitted from the subject by the excitation light, and the second antireflection layer includes a light-shielding film that shields excitation light with which a subject is irradiated and/or a transmission film that transmits fluorescence emitted from the subject by the excitation light. ### Claim 6 (depends on 5) The imaging device according to claim 5, wherein the excitation light has a wavelength of 760 nanometers±10 nanometers, and the fluorescence has a wavelength of 850 nanometers±10 nanometers. ### Claim 7 (depends on 1) The imaging device according to claim 1, wherein the first support layer includes a first adhesive layer, a first antireflection layer, and a second adhesive layer stacked in this order, the second support layer includes a third adhesive layer, a second antireflection layer, and a fourth adhesive layer stacked in this order, and the second adhesive layer and the third adhesive layer are bonded to each other to form a stacked structure of the first substrate and the second substrate. ### Claim 8 (depends on 7) The imaging device according to claim 7, wherein the first antireflection layer includes a light-shielding film that shields excitation light with which a subject is irradiated and/or a transmission film that transmits fluorescence emitted from the subject by the excitation light, and the second antireflection layer includes a light-shielding film that shields excitation light with which a subject is irradiated and/or a transmission film that transmits fluorescence emitted from the subject by the excitation light. ### Claim 9 (depends on 8) The imaging device according to claim 8, wherein the excitation light has a wavelength of 760 nanometers±10 nanometers, and the fluorescence has a wavelength of 850 nanometers±10 nanometers. ### Claim 10 (depends on 7) The imaging device according to claim 7, wherein the first adhesive layer includes a silicon oxide film, the first antireflection layer includes a silicon nitride film, and the second adhesive layer includes a silicon oxide film, and the third adhesive layer includes a silicon nitride film, the second antireflection layer includes a silicon oxide film, and the fourth adhesive layer includes a silicon nitride film. ### Claim 11 (depends on 7) The imaging device according to claim 7, wherein the first adhesive layer includes a silicon nitride film, the first antireflection layer includes a silicon oxide film, and the second adhesive layer includes a silicon nitride film, and the third adhesive layer includes a silicon oxide film, the second antireflection layer includes a silicon nitride film, and the fourth adhesive layer includes a silicon oxide film. ### Claim 12 (depends on 1) The imaging device according to claim 1, further comprising a light emitting element that outputs excitation light with which a subject is irradiated. ### Claim 13 (depends on 1) The imaging device according to claim 1, wherein the second wiring layer has a wiring, and the wiring is a transparent wiring. ### Claim 14 (depends on 1) The imaging device according to claim 1, wherein the second wiring layer has a wiring, and the wiring is arranged in at least one area corresponding to between the pixels adjacent to each other in the plurality of pixels arranged two-dimensionally in the second pixel array unit. ### Claim 15 (depends on 1) The imaging device according to claim 1, wherein the second wiring layer has a wiring, and the wiring is arranged only in an area corresponding to the pixels of at least a part of the plurality of pixels arranged two-dimensionally in the second pixel array unit. ### Claim 16 (depends on 1) An electronic device equipped with the imaging device according to claim 1.