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US 12,009,379 B2Granted
Image sensor
AssigneeVisEra Technologies Company Limited
InventorsWu-Cheng Kuo, Kuo-Feng Lin, Tsung-Lin Wu, Chin-Chuan Hsieh
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Abstract
An image sensor is provided. The image sensor includes a substrate having a first region and a second region adjacent to each other; and a first photoelectric conversion component disposed on the first region of the substrate, and the first photoelectric conversion component includes: a first metal layer formed on the substrate; a first photoelectric conversion layer formed on the first metal layer; and a second metal layer formed on the first photoelectric conversion layer.
Claims11
An image sensor, comprising:
- a substrate having a first region and a second region adjacent to each other;
- and
- a first photoelectric conversion component disposed on the first region of the substrate, the first photoelectric conversion component being a photodiode and an infrared (IR) light detector, wherein the first photoelectric conversion component comprises:
- a first metal layer formed on the substrate;
- a first photoelectric conversion layer formed directly on the first metal layer;
- a second metal layer formed directly on the first photoelectric conversion layer, wherein the first metal layer, the first photoelectric conversion layer and the second metal layer form a Fabry-Perot cavity that functions as the IR light detector by selectively detecting IR light by optical interference based on a wavelength of the IR light;
- a first additional photoelectric conversion layer disposed directly on the second metal layer;
- and
- a third metal layer disposed directly on the first additional photoelectric conversion layer, wherein the second metal layer, the first additional photoelectric conversion layer and the third metal layer form a first additional Fabry-Perot cavity;
- a second photoelectric conversion component disposed in the second region of the substrate, wherein the second photoelectric conversion component is embedded in the substrate;
- a high-k dielectric layer disposed only in the second region of the substrate;
- a transparent layer disposed directly on the high-k dielectric layer and extending over the first photoelectric conversion component;
- and
- a pad connected to the first photoelectric conversion layer,
- wherein an IR light detection signal is transmitted by the first photoelectric conversion component to the pad.
12 more elements
Dependencies are inferred from the claim text.