# US 12,009,377 B2 · Solid-state imaging device and electronic apparatus for curbing deterioration of picture quality

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- Number: US 12,009,377 B2
- Document ID: US12009377B2
- Status: Granted
- Kind: B2
- Application number: 17/430,469
- Filed: 2020-02-21
- Published: 2022-04-14
- Granted: 2024-06-11
- Earliest claimed: 2019-02-21
- Assignees: Sony Semiconductor Solutions Corporation
- Applicants: Sony Semiconductor Solutions Corporation
- Inventors: Yutaka Ooka; Taizo Takachi; Yuichi Yamamoto
- Web page: https://patentgrep.com/patent/US12009377B2

## CPC

- H10F 39/804: {Containers or encapsulations}
- H04N 25/70: SSIS architectures; Circuits associated therewith
- H10F 39/011: {Manufacture or treatment of image sensors covered by group H10F39/12}
- H10F 39/805: {Coatings}
- H10F 39/8057: {Optical shielding}
- H10F 39/806: {Optical elements or arrangements associated with the image sensors}
- H10F 39/8063: {Microlenses}
- H10W 46/00: Marks applied to devices, e.g. for alignment or identification
- G02B 3/0056: {arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses (G02B3/0043 takes precedence; miniaturised objectives for electronic devices employing wafer level optics G02B13/0085)}
- H10W 46/301: {for alignment}
- H10W 46/601: {for use after dicing}
- H10W 46/607: {Located on parts of packages, e.g. on encapsulations or on package substrates}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS

## Abstract

Picture quality deterioration is curbed. A solid-state imaging device according to an embodiment includes: a semiconductor substrate (131) including a light-receiving element; an on-chip lens (132) disposed on a first surface of the semiconductor substrate; a resin layer (133) covering the on-chip lens; and a glass substrate (134) disposed on the side of the first surface of the semiconductor substrate separately from the resin layer.

## Claims

### Claim 1

A solid-state imaging device, comprising:
a semiconductor substrate including a light-receiving element;
an on-chip lens disposed on a first surface of the semiconductor substrate;
a resin layer that covers the on-chip lens; and
a glass substrate disposed on a side of the first surface of the semiconductor substrate separately from the resin layer, wherein the glass substrate includes a first trench in a surface that faces the semiconductor substrate.

### Claim 2 (depends on 1)

The solid-state imaging device according to claim 1, further comprising a structure in a wall shape which supports the glass substrate against the semiconductor substrate.

### Claim 3 (depends on 2)

The solid-state imaging device according to claim 2, wherein:
the semiconductor substrate further includes a plurality of light-receiving elements, including the light-receiving element, disposed in a matrix form on the side of the first surface of the semiconductor substrate, and
the structure is disposed at a boundary part of neighboring light-receiving elements of the plurality of light-receiving elements.

### Claim 4 (depends on 3)

The solid-state imaging device according to claim 3, wherein the structure divides the first trench into a plurality of second trenches.

### Claim 5 (depends on 4)

The solid-state imaging device according to claim 4, wherein the structure is a partition wall that is a part of the glass substrate and divides the first trench into the plurality of second trenches.

### Claim 6 (depends on 4)

The solid-state imaging device according to claim 4, wherein:
the on-chip lens corresponds one-to-one to each of the plurality of light-receiving elements, and
the structure divides the first trench into the plurality of second trenches such that each of the plurality of second trenches corresponds one-to-one to the on-chip lens.

### Claim 7 (depends on 4)

The solid-state imaging device according to claim 4, wherein:
the on-chip lens corresponds one-to-one to each of the plurality of light-receiving elements,
the structure divides the first trench into the plurality of second trenches such that each of the plurality of second trenches corresponds one-to-one to each of a plurality of on-chip lenses that includes the on-chip lens.

### Claim 8 (depends on 4)

The solid-state imaging device according to claim 4, wherein a depth of the first trench is equal to or greater than 1 μm (micrometer) and is a depth equal to or less than half a maximum thickness of the glass substrate.

### Claim 9 (depends on 4)

The solid-state imaging device according to claim 4, wherein the resin layer rises toward an inside of each of the plurality of second trenches.

### Claim 10 (depends on 4)

The solid-state imaging device according to claim 4, wherein a cross-sectional shape of a surface of the plurality of second trenches which is parallel to the first surface is a rectangle.

### Claim 11 (depends on 4)

The solid-state imaging device according to claim 4, wherein a cross-sectional shape of a surface of the plurality of second trenches which is parallel to the first surface is a circle.

### Claim 12 (depends on 2)

The solid-state imaging device according to claim 2, further comprising a first light-shielding film provided on a surface of the structure on the side of the semiconductor substrate.

### Claim 13 (depends on 12)

The solid-state imaging device according to claim 12, further comprising a second light-shielding film provided on a side of the structure.

### Claim 14 (depends on 1)

The solid-state imaging device according to claim 1, further comprising an antireflection film provided on a surface, of the glass substrate, opposite to the surface that faces the semiconductor substrate.

### Claim 15 (depends on 1)

The solid-state imaging device according to claim 1, further comprising a filter that is provided on a surface, of the glass substrate, opposite to the surface that faces the semiconductor substrate, wherein the filter absorbs infrared light.

### Claim 16 (depends on 1)

The solid-state imaging device according to claim 1, wherein a roughness of the surface of the glass substrate which faces the semiconductor substrate is higher than a roughness of a surface, of the glass substrate, opposite to the first surface of the semiconductor substrate.

### Claim 17

A solid-state imaging device, comprising:
a semiconductor substrate including a plurality of light-receiving elements;
an on-chip lens disposed on a first surface of the semiconductor substrate;
a glass substrate disposed on a side of the first surface of the semiconductor substrate separately from the on-chip lens; and
a plurality of pillar-shaped structures for one of the plurality of light-receiving elements, wherein the plurality of pillar-shaped structures supports the glass substrate against the semiconductor substrate.

### Claim 18 (depends on 17)

The solid-state imaging device according to claim 17, wherein each of the plurality of pillar-shaped structures is provided to correspond one-to-one to one of the plurality of light-receiving elements.

### Claim 19

An electronic apparatus, comprising:
a solid-state imaging device;
an optical system configured to image incident light on a light-receiving surface of the solid-state imaging device; and
a processor configured to control the solid-state imaging device, wherein the solid-state imaging device includes:
a semiconductor substrate including a light-receiving element;
an on-chip lens disposed on a first surface of the semiconductor substrate;
a resin layer that covers the on-chip lens;
a glass substrate disposed on a side of the first surface of the semiconductor substrate separately from the resin layer;
a structure in a wall shape that supports the glass substrate against the semiconductor substrate; and
a light-shielding film on a surface, of the structure, that is on the side of the semiconductor substrate.