# US 12,009,372 B2 · Display device including hydrogen diffusion barrier film, and method for manufacturing same

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- Number: US 12,009,372 B2
- Document ID: US12009372B2
- Status: Granted
- Kind: B2
- Application number: 17/601,860
- Filed: 2020-03-27
- Published: 2022-06-30
- Granted: 2024-06-11
- Earliest claimed: 2019-04-09
- Assignees: Isac Research Inc.
- Applicants: Isac Research Inc.
- Inventors: Jin-Seong Park; Seong-Hyeon Lee; Ju-Hwan Han; Hyun-Jun Jeong
- Web page: https://patentgrep.com/patent/US12009372B2

## CPC

- H10D 86/0223: {comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials}
- H10D 30/0314: {of lateral top-gate TFTs comprising only a single gate}
- H10D 30/0321: {comprising silicon, e.g. amorphous silicon or polysilicon}
- H10D 30/6731: {Top-gate only TFTs}
- H10D 30/6745: {Polycrystalline or microcrystalline silicon}
- H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}
- H10D 86/451: {characterised by the compositions or shapes of the interlayer dielectrics}
- H10D 86/60: wherein the TFTs are in active matrices
- H10P 95/00: Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A display device may comprise: a substrate including a driving area and a pixel area; a first transistor on the driving area; a second transistor on the pixel area; a first hydrogen diffusion barrier film between a first active layer and a first gate insulating film of the first transistor; and a second hydrogen diffusion barrier film between a second active layer and a second gate insulating film of the second transistor.

## Claims

### Claim 1

A display device comprising:
a substrate including a driving area and a pixel area;
a first transistor on the driving area;
a second transistor on the pixel area;
a first hydrogen diffusion barrier film between a first active layer and a first gate insulating film of the first transistor; and
a second hydrogen diffusion barrier film between a second active layer and a second gate insulating film of the second transistor,
wherein the first transistor comprises a first gate electrode, a first source electrode and a first drain electrode disposed on the first gate insulating film, and the display device further comprises:
a first insulating film disposed on the driving area including the first gate electrode, the first source electrode, and the first drain electrode; and
a third hydrogen diffusion barrier film disposed between the first gate electrode, the first source electrode, the first drain electrode and the first insulating film.

### Claim 2 (depends on 1)

The display device of claim 1, wherein the first hydrogen diffusion barrier film and the second hydrogen diffusion barrier film comprise at least any one of aluminum oxide, titanium oxide, tin oxide, gallium oxide, or silicon oxide.

### Claim 3 (depends on 1)

The display device of claim 1, wherein the second transistor comprises a second gate electrode, and the display device further comprises:
a first insulating film disposed between the second gate electrode of the second transistor and the substrate; and
a fourth hydrogen diffusion barrier film disposed between the first insulating film and the second gate electrode.

### Claim 4 (depends on 3)

The display device of claim 3, wherein the second transistor comprises:
the second active layer disposed on the fourth hydrogen diffusion barrier film; and
the second source electrode and a second drain electrode, coming into contact with both sides of the second active layer disposed on the second gate insulating film, respectively and the display device further comprises:
a passivation film on the substrate including the second transistor; and
a fifth hydrogen diffusion barrier film disposed between the second active layer and the passivation film.

### Claim 5

A method for manufacturing a display device, the method comprising:
preparing a substrate including a driving area and a pixel area;
forming a first transistor on the driving area; and
forming a second transistor on the pixel area,
wherein a first hydrogen diffusion barrier film is provided between a first active layer and a first gate insulating film of the first transistor; and
a second hydrogen diffusion barrier film is provided between a second active layer and a second gate insulating film of the second transistor,
wherein the forming of the first transistor comprises:
forming a preliminary active layer on the driving area;
forming the first active layer by crystallizing the preliminary active layer;
forming the first hydrogen diffusion barrier film on the first active layer;
forming the first gate insulating film on the first hydrogen diffusion barrier film formed on the driving area;
forming a first gate electrode on the first gate insulating film disposed on the first active layer; and
forming a first source electrode and a first drain electrode, passing through the first gate insulating film to come into contact with both sides of the first active layer.

### Claim 6 (depends on 5)

The method of claim 5, further comprising:
forming a third hydrogen diffusion barrier film on the first gate electrode, the first source electrode, and the first drain electrode, which are disposed on the first gate insulating film, after the manufacturing of the first transistor;
forming a first insulating film on the driving area and the pixel area of the substrate after the forming of the third hydrogen diffusion barrier film; and
forming a fourth hydrogen diffusion barrier film on the first insulating film formed on the pixel area.

### Claim 7 (depends on 5)

The method of claim 5, wherein the forming of the second transistor comprises:
forming a second gate electrode on the pixel area;
forming the second gate insulating film on the second gate electrode formed on the pixel area;
forming the second hydrogen diffusion barrier film on the second gate insulating film;
forming the second active layer on the second hydrogen diffusion barrier film; and
forming a second source electrode and a second drain electrode, coming into contact with both sides of the second active layer, on the second active layer formed on the second hydrogen diffusion barrier film.

### Claim 8 (depends on 7)

The method of claim 7, wherein the method comprises:
forming a fifth hydrogen diffusion barrier film on the second active layer after the manufacturing of the second transistor; and
forming a passivation layer on the substrate including the first transistor and the second transistor.

### Claim 9 (depends on 5)

The method of claim 5, wherein the forming of the first hydrogen diffusion barrier film and the forming of the second hydrogen diffusion barrier film are performed by thermal atomic layer deposition (ALD) or plasma atomic layer deposition (PEALD).

### Claim 10 (depends on 9)

The method of claim 9, wherein the forming of the first hydrogen diffusion barrier film and the forming of the second hydrogen diffusion barrier film comprise:
providing a precursor including a metal in a chamber; and
providing a reaction gas,
wherein the metal includes at least any one of aluminum, titanium, tin, gallium, or silicon, and
the reaction gas includes at least any one of nitrous oxide (N2O) or oxygen (O2).

### Claim 11 (depends on 5)

The method of claim 5, wherein the first hydrogen diffusion barrier film comes into contact with the first active layer, and
the second hydrogen diffusion barrier film comes into contact with the second active layer,
wherein the first hydrogen diffusion barrier film and the second hydrogen diffusion barrier film include a non-tin oxide.