# US 12,009,364 B2 · Semiconductor device and manufacture thereof

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- Number: US 12,009,364 B2
- Document ID: US12009364B2
- Status: Granted
- Kind: B2
- Application number: 18/313,971
- Filed: 2023-05-08
- Published: 2023-08-31
- Granted: 2024-06-11
- Earliest claimed: 2021-04-16
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Company, Ltd.
- Inventors: Te-Hsin Chiu; Shih-Wei Peng; Meng-Hung Shen; Jiann-Tyng Tzeng
- Web page: https://patentgrep.com/patent/US12009364B2

## CPC

- H10D 84/0151: {Manufacturing their isolation regions}
- H10D 84/853: {comprising FinFETs}
- H10D 30/024: {of fin field-effect transistors [FinFET]}
- H10D 30/6211: {having fin-shaped semiconductor bodies integral with the bulk semiconductor substrates}
- H10D 62/115: {Dielectric isolations, e.g. air gaps}
- H10D 84/0149: {Manufacturing their interconnections or electrodes, e.g. source or drain electrodes}
- H10D 84/0158: {the components including FinFETs}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10D 89/10: Integrated device layouts
- H10D 84/0186: {Manufacturing their interconnections or electrodes, e.g. source or drain electrodes}
- H10D 84/0188: {Manufacturing their isolation regions}
- H10D 84/0193: {the components including FinFETs}
- H10D 84/85: Complementary IGFETs, e.g. CMOS
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

In some embodiments, a method of making a semiconductor device includes forming a recess in a first region of a first dielectric material, the first dielectric material at least partially embedding a semiconductor region, the recess having a first surface portion separated by a distance in a first direction from the semiconductor region by a portion of the first dielectric material; depositing a second dielectric material in the recess to form a second surface portion oriented at an oblique angle from the first surface portion; and depositing a conductive material in the recess. In some embodiments, the method further includes partially exposing the semiconductor region in a second recess in the first dielectric material and selectively depositing the second dielectric material on the first dielectric material, but not the semiconductor region, in the second recess.

## Claims

### Claim 1

A method of making a semiconductor device, the method comprising:
forming a first recess in a first region of a first dielectric material, the first dielectric material at least partially embedding a region comprising a semiconductor material, the first recess having a first surface portion separated by a distance in a first direction from the region of semiconductor material by a portion of the first dielectric material;
depositing a second dielectric material in the first recess to form a second surface portion oriented at an oblique angle from the first surface portion; and
depositing a conductive or semiconductive material in the first recess.

### Claim 2 (depends on 1)

The method of claim 1, further comprising:
forming a second recess in a second region of the first dielectric material to expose a portion of the region of semiconductor in the second recess, with the first and second recesses separated from each other by a portion of the first dielectric material; and
selectively depositing a layer of the second dielectric material on the first dielectric material in the second recess but not on the semiconductor material.

### Claim 3 (depends on 2)

The method of claim 2, wherein the selective deposition step comprising depositing as the second dielectric material a material that selectively forms bonding with the first dielectric material but not with the semiconducting material.

### Claim 4 (depends on 2)

The method of claim 2, wherein the selectively depositing the layer of the second dielectric material on the first dielectric material in the second recess comprises forming portions of the layer of the second dielectric material of different thicknesses on respective portions of the first dielectric material in the second recess.

### Claim 5 (depends on 4)

The method of claim 4, wherein the forming portions of the layer of the second dielectric material of different thicknesses comprises subjecting the different portions of the layer of the second dielectric material to different etching processes.

### Claim 6 (depends on 1)

The method of claim 1, wherein:
the forming the first recess comprises forming a bottom surface of the recess, the bottom surface defining a normal direction, the first direction being substantially transverse to the normal direction, the bottom surface and the first surface forming a corner region; and
the step of depositing a second dielectric material in the first recess to form a second surface portion oriented at an oblique angle from the first surface portion comprises depositing the second dielectric material in the corner region and forming a second surface of the second dielectric material in the corner region, the second surface being oblique to the first direction and the normal direction.

### Claim 7 (depends on 6)

The method of claim 6, wherein the second surface forms an oblique angle with the normal direction of the bottom surface, and the forming the second surface further comprising adjusting the oblique angle.

### Claim 8 (depends on 6)

The method of claim 6, further comprising:
forming a second recess in a second region of the first dielectric material to expose a portion of the region of semiconductor in the second recess, with the first and second recesses separated from each other by a portion of the first dielectric material; and
selectively depositing a layer of the second dielectric material on the first dielectric material in the second recess but not on the semiconductor material.

### Claim 9 (depends on 8)

The method of claim 8, further comprising
etching the layer of the second dielectric material to increase the portion of the region of semiconductor exposed in the second recess.

### Claim 10 (depends on 9)

The method of claim 9, wherein the etching comprises subjecting different portions of the layer of the second dielectric material to different etching processes.