Protection devices with trigger devices and methods of formation thereof

A method of forming a semiconductor device, the method comprising:

• forming a first vertical protection device comprising a thyristor in a substrate;
• forming a first lateral trigger element for triggering the first vertical protection device in the substrate;
• and
• forming an electrical path in the substrate to electrically couple the first lateral trigger element with the first vertical protection device;
• forming a second vertical protection device comprising a second thyristor in the substrate;
• forming a second lateral trigger element for triggering the second vertical protection device in the substrate;
• and
• forming a second electrical path in the substrate to electrically couple the second lateral trigger element with the second vertical protection device,
• wherein the first and second vertical protection devices form a bidirectional transient voltage suppressor device,
• wherein the first and second lateral trigger elements are each configured as bipolar transistors.