# US 12,009,359 B2 · Semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,009,359 B2 - Document ID: US12009359B2 - Status: Granted - Kind: B2 - Application number: 17/504,269 - Filed: 2021-10-18 - Published: 2022-05-19 - Granted: 2024-06-11 - Earliest claimed: 2020-11-18 - Assignees: Murata Manufacturing Co., Ltd. - Applicants: Murata Manufacturing Co., Ltd. - Inventors: Shinnosuke Takahashi; Masayuki Aoike; Takayuki Tsutsui; Shigeki Koya - Web page: https://patentgrep.com/patent/US12009359B2 ## CPC - H10D 84/615: {Combinations of vertical BJTs and one or more of resistors or capacitors} - H10D 89/611: {using diodes as protective elements} - H10W 90/00: Package configurations - H10D 8/00: Diodes (variable-capacitance diodes H10D1/64; gated diodes H10D12/00) - H10D 10/821: {Vertical heterojunction BJTs} - H10D 62/85: being Group III-V materials, e.g. GaAs - H10D 84/05: using Group III-V technology - H10D 89/60: Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] - H10W 72/223: {characterised by the structure of the outermost layers, e.g. multilayered coatings} - H10W 72/252: {comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu} - H10W 72/90: Bond pads, in general - H10W 72/952: {comprising metals or metalloids, e.g. PbSn, Ag or Cu} - H10W 90/10: Configurations of laterally-adjacent chips - H10W 90/22: the stacked chips being on both top and bottom sides of a package substrate, interposer or RDL - H10W 90/792: {between multiple chips} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A semiconductor having transistors arranged side by side in one direction over a surface of a substrate and are connected in parallel. At least one passive element is disposed on at least one of regions between two adjacent ones of the transistors. The transistors each include a collector layer over the substrate, a base layer on the collector layer, and an emitter layer on the base layer. Collector electrodes are arranged in such a manner that each of the collector electrodes is located between the substrate and the collector layer of the corresponding one of the transistors and is electrically connected to the collector layer. ## Claims ### Claim 1 A semiconductor device, comprising: a substrate; transistors arranged side by side in one direction over a surface of the substrate and connected in parallel, the transistors each including a collector layer over the substrate, a base layer on the collector layer, and an emitter layer on the base layer; at least one passive element disposed on at least one of regions between two adjacent ones of the transistors; and collector electrodes arranged such that each of the collector electrodes is located between the substrate and the collector layer of a corresponding one of the transistors and is electrically connected to the collector layer, wherein the at least one passive element does not overlap each of the collector electrodes in a thickness direction of the semiconductor device. ### Claim 2 (depends on 1) The semiconductor device according to claim 1, wherein the at least one passive element includes a first capacitor, and with two of the transistors being disposed on opposite sides of the first capacitor, the first capacitor includes an electrode electrically connected to the base layer of one of the two transistors. ### Claim 3 (depends on 2) The semiconductor device according to claim 2, wherein the at least one passive element includes a first resistance element, and with two of the transistors being disposed on opposite sides of the first resistance element, one of two opposite end portions of the first resistance element is electrically connected to the base layer of one of the two transistors. ### Claim 4 (depends on 2) The semiconductor device according to claim 2, wherein the at least one passive element includes a second capacitor and a second resistance element that are connected in series to constitute a series circuit, and with two of the transistors being disposed on opposite sides of the series circuit including the second capacitor and the second resistance element, the series circuit is electrically connected between the base layer and the collector layer of one of the two transistors. ### Claim 5 (depends on 2) The semiconductor device according to claim 2, wherein the at least one passive element includes a third capacitor, with two of the transistors being disposed on opposite sides of the third capacitor, the third capacitor is electrically connected between the collector layer and the emitter layer of one of the two transistors. ### Claim 6 (depends on 2) The semiconductor device according to claim 2, wherein the at least one passive element includes a fourth capacitor and a fourth inductor that are connected in series to constitute a series circuit, and with two of the transistors being disposed on opposite sides of the series circuit including the fourth capacitor and the fourth inductor, the series circuit is electrically connected between the collector layer and the emitter layer of one of the two transistors. ### Claim 7 (depends on 2) The semiconductor device according to claim 2, further comprising: an interlayer insulating film that covers the transistors and a region of the substrate on which none of the transistors is disposed, wherein the at least one passive element is disposed on the interlayer insulating film. ### Claim 8 (depends on 2) The semiconductor device according to claim 2, wherein the at least one passive element includes a first diode, and with two of the transistors being disposed on opposite sides of the first diode, the first diode is electrically connected between the collector layer and the emitter layer of one of the two transistors. ### Claim 9 (depends on 2) The semiconductor device according to claim 2, wherein the substrate includes a semiconductor material that is more thermally conductive than semiconductor materials of the collector layers, the base layers, and the emitter layers of the transistors. ### Claim 10 (depends on 2) The semiconductor device according to claim 2, further comprising: switching elements on the surface of the substrate over which the transistors are disposed, each of the transistors being provided with at least one of the switching elements; and a multilayer wiring structure disposed between the substrate and the collector electrodes in a manner so as to cover the switching elements, wherein the at least one passive element comprises a plurality of passive elements, and the multilayer wiring structure includes conductive members by which the collector electrodes connected to the transistors are connected to the respective passive elements, with at least one of the switching elements being disposed between each of the collector electrodes and a corresponding one of the passive elements. ### Claim 11 (depends on 1) The semiconductor device according to claim 1, wherein the at least one passive element includes a first resistance element, and with two of the transistors being disposed on opposite sides of the first resistance element, one of two opposite end portions of the first resistance element is electrically connected to the base layer of one of the two transistors. ### Claim 12 (depends on 11) The semiconductor device according to claim 11, wherein the at least one passive element includes a second capacitor and a second resistance element that are connected in series to constitute a series circuit, and with two of the transistors being disposed on opposite sides of the series circuit including the second capacitor and the second resistance element, the series circuit is electrically connected between the base layer and the collector layer of one of the two transistors. ### Claim 13 (depends on 11) The semiconductor device according to claim 11, wherein the at least one passive element includes a third capacitor, with two of the transistors being disposed on opposite sides of the third capacitor, the third capacitor is electrically connected between the collector layer and the emitter layer of one of the two transistors. ### Claim 14 (depends on 1) The semiconductor device according to claim 1, wherein the at least one passive element includes a second capacitor and a second resistance element that are connected in series to constitute a series circuit, and with two of the transistors being disposed on opposite sides of the series circuit including the second capacitor and the second resistance element, the series circuit is electrically connected between the base layer and the collector layer of one of the two transistors. ### Claim 15 (depends on 1) The semiconductor device according to claim 1, wherein the at least one passive element includes a third capacitor, with two of the transistors being disposed on opposite sides of the third capacitor, the third capacitor is electrically connected between the collector layer and the emitter layer of one of the two transistors. ### Claim 16 (depends on 1) The semiconductor device according to claim 1, wherein the at least one passive element includes a fourth capacitor and a fourth inductor that are connected in series to constitute a series circuit, and with two of the transistors being disposed on opposite sides of the series circuit including the fourth capacitor and the fourth inductor, the series circuit is electrically connected between the collector layer and the emitter layer of one of the two transistors. ### Claim 17 (depends on 1) The semiconductor device according to claim 1, further comprising: an interlayer insulating film that covers the transistors and a region of the substrate on which none of the transistors is disposed, wherein the at least one passive element is disposed on the interlayer insulating film. ### Claim 18 (depends on 1) The semiconductor device according to claim 1, wherein the at least one passive element includes a first diode, and with two of the transistors being disposed on opposite sides of the first diode, the first diode is electrically connected between the collector layer and the emitter layer of one of the two transistors. ### Claim 19 (depends on 1) The semiconductor device according to claim 1, wherein the substrate includes a semiconductor material that is more thermally conductive than semiconductor materials of the collector layers, the base layers, and the emitter layers of the transistors. ### Claim 20 (depends on 1) The semiconductor device according to claim 1, further comprising: switching elements on the surface of the substrate over which the transistors are disposed, each of the transistors being provided with at least one of the switching elements; and a multilayer wiring structure disposed between the substrate and the collector electrodes in a manner so as to cover the switching elements, wherein the at least one passive element comprises a plurality of passive elements, and the multilayer wiring structure includes conductive members by which the collector electrodes connected to the transistors are connected to the respective passive elements, with at least one of the switching elements being disposed between each of the collector electrodes and a corresponding one of the passive elements. ### Claim 21 A semiconductor device, comprising: a substrate; transistors arranged side by side in one direction over a surface of the substrate and connected in parallel, the transistors each including a collector layer over the substrate, a base layer on the collector layer, and an emitter layer on the base layer; at least one passive element disposed on at least one of regions between two adjacent ones of the transistors; collector electrodes arranged such that each of the collector electrodes is located between the substrate and the collector layer of a corresponding one of the transistors and is electrically connected to the collector layer; and an interlayer insulating film that covers the transistors and a region of the substrate on which none of the transistors is disposed, wherein the at least one passive element is disposed on the interlayer insulating film. ### Claim 22 A semiconductor device, comprising: a substrate; transistors arranged side by side in one direction over a surface of the substrate and connected in parallel, the transistors each including a collector layer over the substrate, a base layer on the collector layer, and an emitter layer on the base layer; at least one passive element disposed on at least one of regions between two adjacent ones of the transistors; collector electrodes arranged such that each of the collector electrodes is located between the substrate and the collector layer of a corresponding one of the transistors and is electrically connected to the collector layer; switching elements on the surface of the substrate over which the transistors are disposed, each of the transistors being provided with at least one of the switching elements; and a multilayer wiring structure disposed between the substrate and the collector electrodes in a manner so as to cover the switching elements, wherein the at least one passive element comprises a plurality of passive elements, and the multilayer wiring structure includes conductive members by which the collector electrodes connected to the transistors are connected to the respective passive elements, with at least one of the switching elements being disposed between each of the collector electrodes and a corresponding one of the passive elements.