# US 12,009,358 B2 · Protective circuit against electrostatic discharges

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- Number: US 12,009,358 B2
- Document ID: US12009358B2
- Status: Granted
- Kind: B2
- Application number: 17/051,328
- Filed: 2019-05-02
- Published: 2021-08-05
- Granted: 2024-06-11
- Earliest claimed: 2018-05-04
- Assignees: Robert Bosch GmbH
- Applicants: Robert Bosch GmbH
- Inventors: Henning Lohmeyer; Julia Rauh; Michael Graf; Timo Seitzinger
- Web page: https://patentgrep.com/patent/US12009358B2

## CPC

- H10D 89/713: {including a PNP transistor and a NPN transistor, wherein each of said transistors has its base region coupled to the collector region of the other transistor, e.g. silicon controlled rectifier [SCR] devices}
- H10D 89/921: {characterised by the configuration of the interconnections connecting the protective arrangements, e.g. ESD buses}
- H02H 9/044: {Physical layout, materials not provided for elsewhere (varistors H01C7/12; spark-gaps H01T; Ovshinsky devices H10N70/00)}
- H02H 9/046: {responsive to excess voltage appearing at terminals of integrated circuits}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H02H: EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS (indicating or signalling undesired working conditions G01R, e.g. G01R31/00, G08B; locating faults along lines G01R31/08; emergency protective devices H01H)

## Abstract

A protective circuit against electrostatic discharges for connection pins of an application-specific integrated circuit. The protective circuit includes a first connection pin and a second connection pin, and the first connection pin and the second connection pin being connected to one another in a Y configuration. Moreover, an application-specific integrated circuit including a protective circuit of this type is provided.

## Claims

### Claim 1

A protective circuit configured to protect against electrostatic discharges for connection pins of an application-specific integrated circuit, the protective circuit comprising:
a first connection pin; and
a second connection pin;
wherein the first connection pin and the second connection pin are connected to one another in a Y configuration such that the first connection pin and the second connection pin are electrically connected to a shared central node of the protective circuit.

### Claim 2 (depends on 1)

The protective circuit as recited in claim 1, further comprising:
a shared electronic protective structure configured to protect against positive stress for the first connection pin and for the second connection pin.

### Claim 3 (depends on 2)

The protective circuit as recited in claim 2, further comprising:
multiple electronic protective structures configured to protect against polarity reversal of the first connection pin and of the second connection pin.

### Claim 4 (depends on 3)

The protective circuit as recited in claim 3, wherein the electronic protective structures configured to protect against polarity reversal and the electronic protective structure configured to protect against positive stress are connected to one another in a Y configuration.

### Claim 5

A protective circuit configured to protect against electrostatic discharges for connection pins of an application-specific integrated circuit, the protective circuit comprising:
a first connection pin;
a second connection pin, wherein the first connection pin and the second connection pin are connected to one another in a Y configuration;
a shared electronic protective structure configured to protect against positive stress for the first connection pin and for the second connection pin; and
multiple electronic protective structures configured to protect against polarity reversal of the first connection pin and of the second connection pin,
wherein the protective circuit includes a first N-type silicon controlled rectifier and a second N-type silicon controlled rectifier as the electronic protective structures configured to protect against polarity reversal, the first N-type silicon controlled rectifier being connected upstream from the first connection pin and the second N-type silicon controlled rectifier being connected upstream from the second connection pin.

### Claim 6 (depends on 5)

The protective circuit as recited in claim 5, wherein the protective circuit includes a P-type silicon controlled rectifier as the shared electronic protective structure configured to protect against positive stress, which is connected upstream from the first connection pin and upstream the second connection pin.

### Claim 7 (depends on 6)

The protective circuit as recited in claim 6, wherein the P-type silicon controlled rectifier is connected upstream from the first N-type silicon controlled rectifier and the second N-type silicon controlled rectifier.

### Claim 8 (depends on 6)

The protective circuit as recited in claim 6, further comprising:
a dissipation module.

### Claim 9 (depends on 8)

The protective circuit as recited in claim 8, wherein the dissipation module is connected in parallel to the P-type silicon controlled rectifier.

### Claim 10 (depends on 6)

The protective circuit as recited in claim 6, further comprising:
a switch-off module.

### Claim 11 (depends on 10)

The protective circuit as recited in claim 10, wherein the switch-off module is electrically connected to a gate terminal of the P-type silicon controlled rectifier.

### Claim 12 (depends on 6)

The protective circuit as recited in claim 6, wherein a ground terminal is connected upstream from the P-type silicon controlled rectifier.

### Claim 13

An application-specific integrated circuit, comprising:
a protective circuit protective circuit configured to protect against electrostatic discharges for connection pins of the application-specific integrated circuit, the protective circuit including:
a first connection pin, and
a second connection pin,
wherein the first connection pin and the second connection pin are connected to one another in a Y configuration such that the first connection pin and the second connection pin are electrically connected to a shared central node of the protective circuit.

### Claim 14 (depends on 13)

The application-specific integrated circuit as recited in claim 13, wherein the application-specific integrated circuit encompasses a CAN interface or an LVDS interface.
