# US 12,009,290 B2 · Semiconductor module having a multi-branch switch node connector > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,009,290 B2 - Document ID: US12009290B2 - Status: Granted - Kind: B2 - Application number: 18/135,771 - Filed: 2023-04-18 - Published: 2023-08-10 - Granted: 2024-06-11 - Earliest claimed: 2020-10-07 - Assignees: Infineon Technologies Austria AG - Applicants: Infineon Technologies Austria AG - Inventors: Sergey Yuferev; Robert Fehler; Angela Kessler; Gerhard Noebauer; Petteri Palm - Web page: https://patentgrep.com/patent/US12009290B2 ## CPC - H10W 70/614: {the multiple chips being integrally enclosed} - H10W 70/658: {for devices provided for in groups H10D8/00 - H10D48/00} - H10W 70/466: {Tape carriers or flat leads} - H10W 70/481: {for devices being provided for in groups H10D8/00 - H10D48/00} - H10W 70/611: {for connecting multiple chips together} - H10W 70/65: Shapes or dispositions of interconnections - H10W 90/00: Package configurations - H10W 90/811: {Multiple chips on leadframes} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A semiconductor module is provided that includes a low side switch, a high side switch and a control chip. The low side switch and the high side switch are arranged laterally adjacent one another and coupled by a switch node connector to form a half bridge circuit. The switch node connector includes two or more branches that have an arrangement with respect to the low side switch and to the high side switch and that each have a cross-sectional area. ## Claims ### Claim 1 A semiconductor module, comprising: a low side switch; a high side switch; and a control chip; wherein the low side switch and the high side switch are arranged laterally adjacent one another and coupled by a switch node connector to form a half bridge circuit, wherein the switch node connector comprises two or more branches that have an arrangement with respect to the low side switch and to the high side switch and that each have a cross-sectional area. ### Claim 2 (depends on 1) The semiconductor module of claim 1, wherein the switch node connector comprises a first portion that is arranged on the low side switch, a second portion that is arranged on the high side switch, wherein the two or more branches extend between the first portion and the second portion, and wherein the two or more branches are spaced apart from one another. ### Claim 3 (depends on 1) The semiconductor module of claim 1, wherein a second branch of the two or more branches has a cross-sectional area that is smaller than a cross-sectional area of a first branch of the two or more branches. ### Claim 4 (depends on 1) The semiconductor module of claim 1, wherein the switch node connector extends between a drain pad of the low side switch and a source pad of the high side switch, and wherein the two or more branches are positioned between the drain pad of the low side switch and the source pad of the high side switch. ### Claim 5 (depends on 1) The semiconductor module of claim 1, wherein the switch node connector has a form of a conductive layer that comprises at least one aperture to form a first branch and a second branch that are physically spaced apart from one another. ### Claim 6 (depends on 5) The semiconductor module of claim 5, wherein the at least one aperture is positioned at least in part above the control chip. ### Claim 7 (depends on 5) The semiconductor module of claim 5, wherein the first and second branches extend around opposing sides of the control chip. ### Claim 8 (depends on 1) The semiconductor module of claim 1, wherein the switch node connector has a form of a contact clip that comprises at least one aperture to form a first branch and a second branch that are physically spaced apart from one another. ### Claim 9 (depends on 8) The semiconductor module of claim 8, wherein the at least one aperture is positioned at least in part above the control chip. ### Claim 10 (depends on 8) The semiconductor module of claim 8, wherein the first and second branches extend around opposing sides of the control chip. ### Claim 11 (depends on 1) The semiconductor module of claim 1, wherein the low side switch and the high side switch each have a substantially cuboid form and are arranged laterally adjacent one another in a L-shape. ### Claim 12 (depends on 1) The semiconductor module of claim 1, wherein the two or more branches are formed in a single layer. ### Claim 13 (depends on 1) The semiconductor module of claim 1, wherein the control chip comprises gate driver circuitry and is coupled to a gate of the low side switch and a gate of the high side switch. ### Claim 14 (depends on 1) The semiconductor module of claim 1, wherein the semiconductor module has a footprint comprising a Vhigh pad, a Vlow pad, a switch node pad and one or more logic pads, and wherein the switch node connector is coupled to the switch node pad of the semiconductor module. ### Claim 15 (depends on 14) The semiconductor module of claim 14, wherein the low side switch and the high side switch are coupled in series between the Vlow pad and the Vhigh pad of the semiconductor module by the switch node connector, and wherein the switch node connector is positioned within the semiconductor module. ### Claim 16 (depends on 14) The semiconductor module of claim 14, wherein the low side switch comprises a source pad on a first side that faces towards the Vlow pad and a drain pad on a second side opposing the first side, wherein the drain pad is connected to the switch node connector, wherein the high side switch comprises a source pad on a first side and a drain pad on a second side opposing the first side, wherein the drain pad of the high side switch faces towards the Vhigh pad and the source pad is connected to the switch node connector. ### Claim 17 (depends on 1) The semiconductor module of claim 1, wherein the low side switch and the high side switch are each provided by a vertical transistor device. ### Claim 18 (depends on 1) The semiconductor module of claim 1, wherein a second branch of the two or more branches has a length that is greater than a length of a first branch of the two or more branches. ### Claim 19 (depends on 1) The semiconductor module of claim 1, wherein the two or more branches extend in at least two layers that are connected by one or more conductive connections. ### Claim 20 (depends on 1) The semiconductor module of claim 1, wherein the two or more branches each provide a route for carrying current between the low side switch and the high side switch.