Package structure and method of manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShih-Wei Chen, Hao-Yi Tsai, Kuo-Lung Pan, Tin-Hao Kuo, Po-Yuan Teng, Chi-Hui Lai
Life of this patent
Estimating the term…
Abstract
A package structure includes a semiconductor die, a redistribution circuit structure, and a metallization element. The semiconductor die has an active side and an opposite side opposite to the active side. The redistribution circuit structure is disposed on the active side and is electrically coupled to the semiconductor die. The metallization element has a plate portion and a branch portion connecting to the plate portion, wherein the metallization element is electrically isolated to the semiconductor die, and the plate portion of the metallization element is in contact with the opposite side.
Claims20
A method of manufacturing a package structure, comprising:
- providing a semiconductor die;
- encapsulating the semiconductor die in an insulating encapsulation;
- disposing a redistribution circuit structure on a first side of the semiconductor die, the redistribution circuit structure being electrically coupled to the semiconductor die;
- removing a portion of the insulating encapsulation to expose a second side of the semiconductor die, wherein the second side is opposite to the first side;
- disposing a metal film-directly on the second side of the semiconductor die exposed by the insulating encapsulation to physically contact the second side of the semiconductor die, the metal film having a plurality of vias distributed thereon, wherein the semiconductor die is sandwiched between the metal film and the redistribution circuit structure, the metal film is sandwiched between the semiconductor die and the plurality of vias, and the plurality of the vias are thermally coupled to the semiconductor die through the metal film;
- disposing a lid over the metal film, wherein the plurality of vias is disposed between the lid and the metal film;
- and
- disposing a thermal interface material between the lid and the metal film, wherein a thermal conductivity of the thermal interface material is different from a thermal conductivity of the lid.
A package structure, comprising:
- a semiconductor die;
- a metallization element, having a plate portion and a branch portion connecting to the plate portion, and the metallization element being disposed on and electrically isolated to the semiconductor die;
- a lid, disposed over the metallization element, wherein the branch portion of the metallization element is disposed between the lid and the plate portion, and the plate portion of the metallization element is disposed between the semiconductor die and the branch portion;
- and
- a thermal interface material, disposed in a space confined by the lid, the plate portion and the branch portion, wherein a thermal conductivity of the thermal interface material is different from a thermal conductivity of the lid and the metallization element.
A package structure, comprising:
- an insulating encapsulation;
- a semiconductor die, encapsulated in the insulating encapsulation;
- a redistribution circuit structure, disposed on and electrically coupled to the semiconductor die;
- a metal film, having a plurality of vias distributed thereon and disposed on the semiconductor die, wherein the semiconductor die is sandwiched between the metal film and the redistribution circuit structure, the metal film is sandwiched between the semiconductor die and the plurality of vias, and the plurality of the vias are thermally coupled to the semiconductor die through the metal film;
- a lid, disposed over the metal film, wherein the plurality of vias is disposed between the lid and the metal film;
- and
- a thermal interface material, disposed between the lid and the metal film, wherein a thermal conductivity of the thermal interface material is different from a thermal conductivity of the lid.
Dependencies are inferred from the claim text.