# US 12,009,255 B2 · Method of manufacturing semiconductor device including laser treatment for contact plug

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- Number: US 12,009,255 B2
- Document ID: US12009255B2
- Status: Granted
- Kind: B2
- Application number: 17/281,966
- Filed: 2019-08-26
- Published: 2021-12-02
- Granted: 2024-06-11
- Earliest claimed: 2018-10-04
- Assignees: Rnr Lab Inc.
- Applicants: Rnr Lab Inc.
- Inventors: Jeong Do Ryu
- Web page: https://patentgrep.com/patent/US12009255B2

## CPC

- H10W 20/059: {by reflowing or applying pressure}
- H10W 20/068: {by using a laser, e.g. laser cutting or laser direct writing}
- H10W 20/084: {for dual-damascene structures}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A method of manufacturing a semiconductor device comprises providing a substrate; forming an insulating layer on the substrate; etching the insulating layer to form an opening that exposes the substrate; forming a contact plug in the opening and on the insulating layer; forming a metal layer on the contact plug; and irradiating the metal layer with a laser.

## Claims

### Claim 1

A method of manufacturing a semiconductor device, the method comprising:
providing a substrate;
forming an insulating layer on the substrate;
etching the insulating layer to form an opening that exposes the substrate;
forming a contact plug in the opening and on the insulating layer;
forming a metal layer on the contact plug; and
irradiating the metal layer with a laser,
wherein the irradiating of the metal layer with a laser comprises removing a void or a seam in the contact plug by directly heating the metal layer, resulting in Indirectly heating the contact plug, and
wherein the method further comprises forming an insertion layer between the contact plug and the metal layer to prevent reaction or interdiffusion therebetween, and the irradiating of the metal layer with a laser is performed in a state where the insertion layer and the metal layer are disposed on the contact plug.

### Claim 2 (depends on 1)

The method of claim 1, further comprising removing the metal layer.

### Claim 3 (depends on 1)

The method of claim 1, wherein the insulating layer comprises at least one of an oxide, a nitride, and an oxynitride.

### Claim 4 (depends on 1)

The method of claim 1, wherein the opening is a dual damascene pattern, a via hole, or a trench.

### Claim 5 (depends on 1)

The method of claim 1, wherein the contact plug comprises polysilicon or a metal.

### Claim 6 (depends on 1)

The method of claim 1, wherein the metal layer comprises at least one of titanium (Ti), titanium nitride (TIN), titanium silicide (TiSi), tantalum (Ta), tantalum nitride (TaN), cobalt (Co), cobalt silicide (CoSi), nickel (Ni), nickel silicide (NiSi), ruthenium (Ru), tungsten (W), tungsten silicide (WSi), copper (Cu), rhenium (Re), molybdenum (Mo), niobium (Nb), and chromium (Cr).

### Claim 7 (depends on 6)

The method of claim 6, wherein the contact plug comprises a material containing an inorganic material.

### Claim 8 (depends on 1)

The method of claim 1, wherein the laser is a YAG laser, a diode laser, a CO2 laser, or a fiber laser.