# US 12,009,210 B2 · Method of manufacturing a semiconductor device

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- Number: US 12,009,210 B2
- Document ID: US12009210B2
- Status: Granted
- Kind: B2
- Application number: 18/132,843
- Filed: 2023-04-10
- Published: 2023-08-03
- Granted: 2024-06-11
- Earliest claimed: 2019-09-10
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Company, Ltd.
- Inventors: An-Ren Zi; Ching-Yu Chang; Chin-Hsiang Lin
- Web page: https://patentgrep.com/patent/US12009210B2

## CPC

- H10P 76/2041: {Photolithographic processes}
- G03F 7/0043: {Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof (G03F7/0044 takes precedence)}
- G03F 7/162: {Coating on a rotating support, e.g. using a whirler or a spinner}
- G03F 7/168: {Finishing the coated layer, e.g. drying, baking, soaking}
- G03F 7/38: Treatment before imagewise removal, e.g. prebaking {(G03F7/265 takes precedence)}
- G03F 7/40: Treatment after imagewise removal, e.g. baking
- H10P 70/54: {Cleaning of wafer edges}
- H10P 70/56: {Cleaning of wafer backside}
- H10P 72/0436: {mainly by radiation}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)

## Abstract

A method of manufacturing a semiconductor device includes forming a first protective layer over an edge portion of a first main surface of a semiconductor substrate. A metal-containing photoresist layer is formed over the first main surface of the semiconductor substrate. The first protective layer is removed, and the metal-containing photoresist layer is selectively exposed to actinic radiation. A second protective layer is formed over the edge portion of the first main surface of the semiconductor substrate. The selectively exposed photoresist layer is developed to form a patterned photoresist layer, and the second protective layer is removed.

## Claims

### Claim 1

A method, comprising:
forming a first polymer layer over an edge portion of a first main surface of a substrate;
forming a first photoresist layer over the first main surface of the substrate;
removing the first polymer layer;
patternwise exposing the first photoresist layer to actinic radiation to form a first plurality of latent patterns extending along a first direction and arranged along a second direction;
forming a second polymer layer over the edge portion of the first main surface of the substrate;
first heating of the patternwise exposed first photoresist layer and the second polymer layer,
developing the patternwise exposed first photoresist layer to form a first plurality of patterns extending along a first direction and arranged along a second direction;
forming a second photoresist layer over the first plurality of patterns;
removing the second polymer layer;
patternwise exposing the second photoresist layer to actinic radiation to form a second plurality of latent patterns extending along the second direction and arranged along the first direction;
forming a third polymer layer over the edge portion of the first main surface of the substrate; and
developing the patternwise exposed second photoresist layer to form a patterned second photoresist layer including a second plurality of patterns.

### Claim 2 (depends on 1)

The method according to claim 1, further comprising removing the third polymer layer.

### Claim 3 (depends on 1)

The method according to claim 1, wherein the first heating is at a temperature of 100° C. to 150° C. for 10 seconds to 5 minutes.

### Claim 4 (depends on 3)

The method according to claim 3, further comprising a second heating of the patternwise exposed second photoresist layer and the third polymer layer at a temperature of 100° C. to 150° C. for 10 seconds to 5 minutes.

### Claim 5 (depends on 4)

The method according to claim 4 wherein a gas at a temperature of 100° C. to 150° C. is flowed over the first photoresist layer and the second polymer layer during the first heating or over the second photoresist layer and the third polymer layer during the second heating.

### Claim 6 (depends on 4)

The method according to claim 4, further comprising a third heating of the first polymer layer at a temperature of 40° C. to 120° C. before forming the first photoresist layer.

### Claim 7 (depends on 1)

The method according to claim 1, wherein the first photoresist layer or the second photoresist layer includes one or more metals selected from the group consisting of Cs, Ba, La, Ce, In, Sn, and Ag.

### Claim 8 (depends on 7)

The method according to claim 7, wherein a concentration of the one or metals in the first photoresist layer or the second photoresist layer ranges from 10 wt. % to 80 wt. % based on a total weight of the first photoresist layer or the second photoresist layer, respectively.

### Claim 9

A method of manufacturing a semiconductor device, comprising:
forming a first protective layer over an edge portion around a first main surface of a semiconductor substrate;
forming a first photoresist layer over the first main surface of the semiconductor substrate;
removing the first protective layer;
selectively exposing the first photoresist layer to actinic radiation;
forming a second protective layer over the edge portion around the first main surface of the semiconductor substrate;
developing the selectively exposed first photoresist layer to form a first patterned photoresist layer;
forming a second photoresist layer over the first patterned photoresist layer;
removing the second protective layer;
selectively exposing the second photoresist layer to actinic radiation;
forming a third protective layer over the edge portion and around the first main surface of the semiconductor substrate; and
developing the selectively exposed second photoresist layer to form a second patterned photoresist layer.

### Claim 10 (depends on 9)

The method according to claim 9, further comprising removing the third protective layer.

### Claim 11 (depends on 9)

The method according to claim 9, wherein the first photoresist layer comprises a metal and the second photoresist layer comprises a metal.

### Claim 12 (depends on 9)

The method according to claim 9, wherein the first photoresist and second photoresist layer include one or more of Cs, Ba, La, Ce, In, Sn, or Ag.

### Claim 13 (depends on 11)

The method according to claim 11, wherein a concentration of the metal in the first photoresist layer and the second photoresist layer ranges from 10 wt. % to 80 wt. % based on a total weight of the first photoresist layer or second photoresist layer, respectively.

### Claim 14

A method of manufacturing a semiconductor device, comprising:
forming a first polymer layer over an edge of a semiconductor wafer;
forming a first photoresist layer over a main surface of the semiconductor wafer;
removing the first polymer layer;
exposing the first photoresist layer to a first pattern of actinic radiation;
forming a second polymer layer over the edge of the semiconductor wafer;
developing the exposed first photoresist layer to form a first patterned layer;
forming a second photoresist layer over the first patterned layer;
removing the second polymer layer;
exposing the second photoresist layer to a second pattern of actinic radiation;
forming a third polymer layer over the edge of the semiconductor wafer; and
developing the exposed second photoresist layer to form a second patterned layer.

### Claim 15 (depends on 14)

The method according to claim 14, wherein the first photoresist layer comprises a metal and the second photoresist layer comprises a metal.

### Claim 16 (depends on 15)

The method according to claim 15, wherein the first photoresist layer and second photoresist layer include one or more of Cs, Ba, La, Ce, In, Sn, or Ag.

### Claim 17 (depends on 15)

The method according to claim 15, wherein a concentration of the metal in the first photoresist layer and the second photoresist layer ranges from 10 wt. % to 80 wt. % based on a total weight of the first photoresist layer or second photoresist layer, respectively.

### Claim 18 (depends on 14)

The method according to claim 14, further comprising a first heating of the exposed first photoresist layer and the second polymer layer at a temperature of 100° C. to 150° C. for 10 seconds to 5 minutes.

### Claim 19 (depends on 18)

The method according to claim 18, further comprising a second heating of the exposed second photoresist layer and the third polymer layer at a temperature of 100° C. to 150° C. for 10 seconds to 5 minutes.

### Claim 20 (depends on 19)

The method according to claim 19, wherein the semiconductor wafer is placed on a heated surface during the first heating or the second heating.