# US 12,009,208 B2 · Deposition equipment with adjustable temperature source > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,009,208 B2 - Document ID: US12009208B2 - Status: Granted - Kind: B2 - Application number: 17/545,625 - Filed: 2021-12-08 - Published: 2022-12-08 - Granted: 2024-06-11 - Earliest claimed: 2021-06-07 - Assignees: Taiwan Semiconductor Manufacturing Company, Ltd. - Applicants: Taiwan Semiconductor Manufacturing Company, Ltd. - Inventors: Chih Yung Hung; Shahaji B. More; Chien-Feng Lin; Cheng-Han Lee; Shih-Chieh Chang; Ching-Lun Lai; Wei-Jen Lo - Web page: https://patentgrep.com/patent/US12009208B2 ## CPC - H10P 14/27: {using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials} - H10P 72/0436: {mainly by radiation} - C23C 16/48: by irradiation, e.g. photolysis, radiolysis, particle radiation - C30B 25/105: {by irradiation or electric discharge} - C30B 25/12: Substrate holders or susceptors - C30B 25/16: Controlling or regulating (controlling or regulating in general G05) - H10P 34/42: with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20) - H10P 72/7618: {characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel} - H10P 74/23: {characterised by multiple measurements, corrections, marking or sorting processes} - H10P 14/24: using chemical vapour deposition [CVD] - H10P 14/3411: {Silicon, silicon germanium or germanium} - H10P 14/3444: {P-type} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR ## Abstract The present disclosure provides a semiconductor processing apparatus according to one embodiment. The semiconductor processing apparatus includes a chamber; a base station located in the chamber for supporting a semiconductor substrate; a preheating assembly surrounding the base station; a first heating element fixed relative to the base station and configured to direct heat to the semiconductor substrate; and a second heating element moveable relative to the base station and operable to direct heat to a portion of the semiconductor substrate. ## Claims ### Claim 1 A method, comprising: providing a substrate onto a base station of an apparatus, the apparatus further including a first heating element fixed relative to the base station and a second heating element movable relative to the base station, the second heating element being operable to generate a columnated radiation; initiating rotation of the substrate; initiating heating from the first heating element on the substrate; moving the second heating element to direct heating to a region of the substrate; and executing a deposition recipe under heating provided by the first heating element and by the second heating element, wherein the moving of the second heating element includes vertically moving the second heating element along a direction perpendicular to a top surface of the base station and in response to a leveling motion of the base station. ### Claim 2 (depends on 1) The method of claim 1, wherein the moving of the second heating element includes rotating the second heating element by an angle based on a selected illumination spot size and linearly moving the second heating element along a slide. ### Claim 3 (depends on 1) The method of claim 1, wherein the moving of the second heating element includes shuttling the second heating element at a frequency determined based on a rotation speed of the substrate. ### Claim 4 (depends on 1) The method of claim 1, further comprising determining a leveling range L of the substrate, wherein the moving of the second heating element includes shuttling the second heating element between two extremely positions separated by a distance δz at a shuttling frequency φz, wherein the distance δz is linearly correlated with the leveling range L, and the shuttling frequency φz is inversely correlated with a rotation speed R of the substrate. ### Claim 5 (depends on 1) The method of claim 1, wherein the moving of the second heating element includes rotating the second heating element about an axis parallel to a top surface of the base station, such that a radiation beam from the second heating element spans an angle θ from a vertical direction, wherein the angle θ is determined from a size S of the radiation beam on a plane perpendicular to a propagating direction of the radiation beam and a size S′ of the radiation beam on the substrate, according to equation θ = cos - 1 ( ( s ′ s ) 1 / 2 ) . ### Claim 6 (depends on 1) The method of claim 1, further includes terminating the moving of the second heating element prior to the executing of the deposition recipe. ### Claim 7 (depends on 1) The method of claim 1, wherein the executing of the deposition recipe includes executing while maintaining a movement of the second heating element. ### Claim 8 (depends on 1) The method of claim 1, wherein the first heating element includes a first lamp module fixed to the apparatus at a level above the substrate secured on the apparatus and a second lamp module fixed to the apparatus at a level below the substrate; and the second heating element includes laser heating elements configured to provide localized heating. ### Claim 9 A method, comprising: providing a substrate onto a base station of an apparatus, the apparatus further including heating lamps fixed relative to the base station and a laser heating element movable relative to the base station, the laser heating element being operable to generate a columnated radiation; initiating rotation of the substrate; initiating heating from the first heating element on the substrate; moving the laser heating element to direct heating to a region of the substrate; and executing a deposition recipe under heating provided by the heating lamps and by the laser heating element, wherein the moving of the second heating element includes vertically moving the second heating element along a direction perpendicular to a top surface of the base station and in response to a leveling motion of the base station. ### Claim 10 (depends on 9) The method of claim 9, wherein the heating lamps further include a first subset fixed at a level above the base station and a second subset fixed at a level below the base station; the first subset of the heating lamps is configured to heat an inner zone of the substrate; and the second subset of the heating lamps is configured to heat an outer zone of the substrate. ### Claim 11 (depends on 9) The method of claim 9, wherein the laser heating element is slidably attached to a slide fixed relative to the base station. ### Claim 12 (depends on 11) The method of claim 11, wherein the moving of the laser heating element includes rotating the laser heating element by an angle based on a selected illumination spot size and linearly moving the laser heating element along the slide. ### Claim 13 (depends on 9) The method of claim 9, wherein the executing a deposition recipe under heating includes providing the collimated radiation having a spot size of about 10 mm to about 18 mm by the laser heating element. ### Claim 14 (depends on 9) The method of claim 9, wherein the moving of the second heating element includes rotating the second heating element about an axis parallel to a top surface of the base station, such that a radiation beam from the second heating element spans an angle θ from a vertical direction, wherein the angle θ is determined from a size S of the radiation beam on a plane perpendicular to a propagating direction of the radiation beam and a size S′ of the radiation beam on the substrate, according to equation θ=cos−1((S′/S)1/2). ### Claim 15 (depends on 9) The method of claim 9, wherein the executing of the deposition recipe includes executing the deposition recipe while maintaining a movement of the second heating element. ### Claim 16 (depends on 9) The method of claim 9, wherein the executing of the deposition recipe under heating provided by the heating lamps and by the laser heating element includes performing a first selective epitaxial growth to form a first semiconductor layer of a semiconductor material with a first deposition temperature T1, performing a second selective epitaxial growth to form a second semiconductor layer of the semiconductor material with a second deposition temperature T2, performing a third selective epitaxial growth to form a third semiconductor layer of the semiconductor material with a third deposition temperature T3, and performing a cyclic deposition/etching process to form a fourth semiconductor layer of the semiconductor material with a fourth deposition temperature T4, wherein T1, T2 and T3 are different. ### Claim 17 A method, comprising: providing a substrate onto a base station of an apparatus, wherein the apparatus further includes heating lamps fixed relative to the base station and a laser heating element is slidably attached to a slide fixed relative to the base station and is operable to generate a columnated radiation; initiating rotation of the substrate; initiating heating from the first heating element on the substrate; and executing a deposition recipe under heating provided by the heating lamps and the laser heating element, wherein the executing of the deposition recipe includes executing the deposition recipe while vertically moving the second heating element along a direction perpendicular to a top surface of the base station. ### Claim 18 (depends on 17) The method of claim 17, wherein the executing of the deposition recipe includes rotating the laser heating element by an angle based on a selected illumination spot size and linearly moving the laser heating element along a slide. ### Claim 19 (depends on 17) The method of claim 17, wherein the executing of the deposition recipe includes shuttling the laser heating element at a frequency determined based on a rotation speed of the substrate. ### Claim 20 (depends on 19) The method of claim 19, further comprising determining a leveling range L of the substrate, wherein the shuttling the laser heating element includes shuttling the laser heating element between two extremely positions separated by a distance δz at a shuttling frequency φz, and wherein the distance δz is linearly correlated with the leveling range L, and the shuttling frequency φz is inversely correlated with a rotation speed R of the substrate.