# US 12,009,207 B2 · Gallium nitride device for high frequency and high power applications > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,009,207 B2 - Document ID: US12009207B2 - Status: Granted - Kind: B2 - Application number: 18/047,914 - Filed: 2022-10-19 - Published: 2023-02-23 - Granted: 2024-06-11 - Earliest claimed: 2017-05-12 - Assignees: Analog Devices, Inc. - Applicants: Analog Devices, Inc. - Inventors: Puneet Srivastava; James G. Fiorenza - Web page: https://patentgrep.com/patent/US12009207B2 ## CPC - H10D 62/107: {Buried supplementary regions, e.g. buried guard rings (multi-RESURF H10D62/111)} - H10D 64/112: {comprising multiple field plate segments} - H10D 30/015: {of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT} - H10D 30/47: having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT] - H10D 30/475: {having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs} - H10D 62/824: comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions - H10D 64/117: {Recessed field plates, e.g. trench field plates or buried field plates} - H10P 14/3416: {Nitrides} - H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN} - H10D 64/111: {Field plates} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A semiconductor device includes a layer of a first semiconducting material, where the first semiconducting material is epitaxially grown to have a crystal structure of a first substrate. The semiconductor device further includes a layer of a second semiconducting material disposed adjacent to the layer of the first semiconducting material to form a heterojunction with the layer of the first semiconducting material. The semiconductor device further includes a first component that is electrically coupled to the heterojunction, and a second substrate that is bonded to the layer of the first semiconducting material. ## Claims ### Claim 1 A method of manufacturing a semiconductor device, the method comprising: receiving, obtaining, or providing a starting material that comprises: a first substrate having a first crystal structure, a layer of sacrificial material that has a second crystal structure based on the first crystal structure and is adjacent to the first substrate, a first portion of a layer of a first semiconducting material that has a third crystal structure based on the first crystal structure and is adjacent to the layer of sacrificial material, a layer of etch stop material on the first portion of the layer of the first semiconducting material, growing a second portion of the layer of the first semiconducting material over the first portion of the layer of the first semiconducting material and the layer of etch stop material, the second portion having a specified height, wherein the etch stop material and the specified height are selected to determine a distance of a backside field plate formed in the layer of the first semiconducting material from a heterojunction, and a layer of a second semiconducting material that forms the heterojunction with the layer of the first semiconducting material; forming a first component of the semiconductor device, the first component electrically coupled to the heterojunction; and removing the first substrate to expose a surface of the layer of the first semiconducting material. ### Claim 2 (depends on 1) The method of claim 1, wherein the sacrificial material comprises graphene. ### Claim 3 (depends on 1) The method of claim 1, wherein at least one of the layers of the starting material is grown epitaxially to the first substrate. ### Claim 4 (depends on 1) The method of claim 1, further comprising forming, prior to a bonding, a second component of the semiconductor device that contacts the layer of the first semiconducting material without contacting the layer of the second semiconducting material. ### Claim 5 (depends on 4) The method of claim 4, wherein the first component includes a first field plate, the method comprising: aligning the backside field plate with the first field plate or a gate electrode. ### Claim 6 (depends on 5) The method according to claim 5, wherein forming the backside field plate comprises one or more of: doping a portion of the first semiconducting material to increase a density of minority charge carriers; replacing the portion with a metal, a regrown ohmic contact, or a heterostructure; and epitaxially growing a doped material. ### Claim 7 (depends on 1) The method of claim 1, further comprising: bonding, to a second substrate, an exposed surface of the layer of the first semiconducting material; and forming at least one component of the semiconductor device after bonding the exposed surface to the second substrate. ### Claim 8 (depends on 1) The method of claim 1, further comprising manufacturing a second semiconductor device using the first substrate. ### Claim 9 A method of manufacturing a semiconductor device, the method comprising: receiving, obtaining, or providing a starting material that comprises: a first substrate having a first crystal structure, a layer of sacrificial material that has a second crystal structure based on the first crystal structure and is adjacent to the first substrate, a layer of a first semiconducting material that has a third crystal structure based on the first crystal structure and is adjacent to the layer of sacrificial material, and a layer of a second semiconducting material that forms a heterojunction with the layer of the first semiconducting material; forming a first component of the semiconductor device, the first component electrically coupled to the heterojunction; removing the first substrate to expose a surface of the layer of the first semiconducting material; and forming, prior to a bonding, a second component of the semiconductor device that contacts the layer of the first semiconducting material without contacting the layer of the second semiconducting material. ### Claim 10 (depends on 9) The method of claim 9, further comprising: growing a first portion of the layer of the first semiconducting material; depositing a layer of etch stop material on the first portion of the layer of the first semiconducting material; and growing a second portion of the layer of the first semiconducting material over the first portion and the etch stop material, the second portion being grown to a specified height; wherein the etch stop material and the specified height are selected to determine a distance of a backside field plate formed in the first portion of the layer of the first semiconducting material from the heterojunction. ### Claim 11 (depends on 9) The method of claim 9, wherein the sacrificial material comprises graphene. ### Claim 12 (depends on 9) The method of claim 9, wherein at least one of the layers of the starting material is grown epitaxially to the first substrate. ### Claim 13 (depends on 9) The method of claim 9, wherein the first component includes a first field plate, and the second component includes a second field plate, the second field plate being aligned with the first field plate or a gate electrode. ### Claim 14 (depends on 13) The method according to claim 13, wherein forming the second field plate comprises one or more of: doping a portion of the first semiconducting material to increase a density of minority charge carriers; replacing the portion with a metal, a regrown ohmic contact, or a heterostructure; and epitaxially growing a doped material. ### Claim 15 (depends on 9) The method of claim 9, further comprising: bonding, to a second substrate, an exposed surface of the layer of the first semiconducting material; and forming at least one component of the semiconductor device after bonding the exposed surface to the second substrate. ### Claim 16 (depends on 9) The method of claim 9, further comprising manufacturing a second semiconductor device using the first substrate.