# US 12,009,185 B2 · Semiconductor processing apparatus having improved temperature control > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,009,185 B2 - Document ID: US12009185B2 - Status: Granted - Kind: B2 - Application number: 16/269,376 - Filed: 2019-02-06 - Published: 2019-08-15 - Granted: 2024-06-11 - Earliest claimed: 2018-02-09 - Assignees: Applied Materials, Inc. - Applicants: Applied Materials, Inc. - Inventors: Jun Ma; Chen-An Chen - Web page: https://patentgrep.com/patent/US12009185B2 ## CPC - H01J 37/32724: {Temperature} - C23C 16/4581: {characterised by material of construction or surface finish of the means for supporting the substrate} - C23C 16/4586: {Elements in the interior of the support, e.g. electrodes, heating or cooling devices} - H10P 72/0432: {mainly by conduction} - H10P 72/0602: {Temperature monitoring} - H10P 72/0604: {Process monitoring, e.g. flow or thickness monitoring} - H10P 72/7611: {characterised by edge profile or support profile} - H10P 72/7626: {characterised by the construction of the shaft} - H01J 2237/3321: CVD [Chemical Vapor Deposition] - H01J 2237/3341: Reactive etching - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A pedestal for a semiconductor processing chamber is provided. The pedestal includes a first body comprising a ceramic material, wherein a plurality of heater elements are encapsulated within the first body, and a second body comprising a ceramic material, wherein one or more continuously curved grooves are formed in one or more surfaces of the second body. Additionally, the first body is coupled to the second body and encloses the grooves. ## Claims ### Claim 1 A pedestal for a semiconductor processing chamber, comprising: a first body comprising a ceramic material that includes a first surface, wherein a plurality of heater elements are encapsulated within the first body; a second body comprising a ceramic material, the second body having one or more continuously curved grooves formed in one or more surfaces of the second body, the one or more continuously curved grooves having a bottom wall and a continuously curved sidewall; and a flexible temperature monitoring device disposed within the one or more continuously curved grooves, the flexible temperature monitoring device having a temperature sensing portion disposed at an end of the flexible temperature monitoring device, wherein: the first body is coupled to the second body, the first surface of the first body is positioned to enclose a region that is defined by the one or more continuously curved grooves formed in the one or more surfaces of the second body and a portion of the first surface, the portion of the first surface forming a top wall of the one or more continuously curved grooves, and the flexible temperature monitoring device and the temperature sensing portion are continuously positioned against the continuously curved sidewall of one or more of the one or more continuously curved grooves providing a gap between the flexible temperature monitoring device and along a sidewall opposite the continuously curved sidewall of the one or more of the one or more continuously curved grooves. ### Claim 2 (depends on 1) The pedestal of claim 1, wherein the temperature monitoring device is a flexible thermocouple. ### Claim 3 (depends on 1) The pedestal of claim 1, wherein one or more of the one or more continuously curved grooves has a constant radius. ### Claim 4 (depends on 1) The pedestal of claim 1, wherein one or more of the one more continuously curved grooves has a radius of between about 0.5 inches and 50.0 inches. ### Claim 5 (depends on 1) The pedestal of claim 1, wherein one or more of the one or more continuously curved grooves has a radius of between about 3.0 inches and 5.0 inches. ### Claim 6 (depends on 1) The pedestal of claim 1, wherein the one or more of the continuously curved grooves is on a horizontal plane. ### Claim 7 A pedestal for a semiconductor processing chamber, comprising: a first body comprising a ceramic material and a second body comprising a ceramic material; a plurality of heater elements encapsulated within the first body; one or more continuously curved grooves formed in one or more surfaces of the first body or the second body, wherein the first body is coupled to the second body and encloses the one or more continuously curved grooves, the one or more continuously curved grooves having a top wall, a bottom wall and continuously curved sidewalls; and a flexible temperature monitoring device having a temperature sensing portion, the flexible temperature monitoring device and the temperature sensing portion disposed within the one or more continuously curved grooves and continuously positioned against a continuously curved sidewall of one or more of the one or more continuously curved grooves along the length of the flexible temperature monitoring device and the temperature sensing portion providing a gap between the flexible temperature monitoring device and along a sidewall opposite the continuously curved sidewall of the one or more of the one or more continuously curved grooves. ### Claim 8 (depends on 7) The pedestal of claim 7, wherein the temperature monitoring device is a flexible thermocouple. ### Claim 9 (depends on 7) The pedestal of claim 7, wherein one or more of the one or more continuously curved grooves has a constant radius. ### Claim 10 (depends on 7) The pedestal of claim 7, wherein one or more of the one or more continuously curved grooves has a radius of between about 0.5 inches and 50.0 inches. ### Claim 11 (depends on 7) The pedestal of claim 7, wherein one or more of the one or more continuously curved grooves has a radius of between about 3.0 inches and 5.0 inches. ### Claim 12 (depends on 7) The pedestal of claim 7, wherein the one or more of the continuously curved grooves is on a horizontal plane. ### Claim 13 A pedestal for a semiconductor processing chamber, comprising: a first body comprising a ceramic material that includes a first surface, wherein a plurality of heater elements are encapsulated within the first body; a second body comprising a ceramic material and a center hole positioned in the center of the second body, wherein one or more curved grooves having a bottom wall and a curved sidewall are formed in one or more surfaces of the second body; and a temperature monitoring device disposed within the one or more curved grooves, the temperature monitoring device having a temperature sensing portion, wherein: the first body is coupled to the second body, the first surface of the first body is positioned to enclose a region that is defined by the one or more curved grooves formed in the one or more surfaces of the second body and a portion of the first surface, the portion of the first surface forming a top wall of the one or more curved grooves, and the temperature monitoring device and the temperature sensing portion are continuously positioned against the curved sidewall of one or more of the one or more curved grooves along the length of the flexible temperature monitoring device and the temperature sensing portion providing a gap between the flexible temperature monitoring device and along a sidewall opposite the continuously curved sidewall of the one or more of the one or more continuously curved grooves. ### Claim 14 (depends on 13) The pedestal of claim 13, wherein one or more of the one or more curved grooves is a continuously curved grooved. ### Claim 15 (depends on 14) The pedestal of claim 14, wherein the continuously curved groove has a constant radius. ### Claim 16 (depends on 13) The pedestal of claim 13, wherein the temperature monitoring device is a flexible thermocouple. ### Claim 17 (depends on 13) The pedestal of claim 13, wherein one of more of the one or more curved grooves has a constant radius. ### Claim 18 (depends on 13) The pedestal of claim 13, wherein the one or more of the continuously curved grooves is on a horizontal plane.