# US 12,009,183 B2 · Film-forming method, manufacturing method of electronic device, and plasma atomic layer deposition apparatus

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- Number: US 12,009,183 B2
- Document ID: US12009183B2
- Status: Granted
- Kind: B2
- Application number: 17/149,696
- Filed: 2021-01-14
- Published: 2021-06-03
- Granted: 2024-06-11
- Earliest claimed: 2017-03-08
- Assignees: The Japan Steel Works, Ltd.
- Applicants: The Japan Steel Works, Ltd.
- Inventors: Keisuke Washio; Masao Nakata; Tatsuya Matsumoto; Junichi Shida
- Web page: https://patentgrep.com/patent/US12009183B2

## CPC

- H01J 37/32669: {Particular magnets or magnet arrangements for controlling the discharge}
- C23C 16/042: {using masks}
- C23C 16/403: {of aluminium, magnesium or beryllium}
- C23C 16/45542: {Plasma being used non-continuously during the ALD reactions}
- C23C 16/45544: {characterized by the apparatus}
- H01J 37/32743: {for introducing the material into processing chamber}
- H05B 33/04: Sealing arrangements {, e.g. against humidity}
- H05B 33/10: Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
- H10K 59/873: {Encapsulations}
- H10P 14/272: {using mask materials other than SiO2 or SiN}
- H10P 14/60: of insulating materials
- H01J 37/32834: {Exhausting}
- H01J 2237/332: Coating
- H10K 71/00: Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H05B: ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

In a film-forming technology using charged particles, a disturbance in film thickness distribution caused by leakage magnetic field is suppressed. A film-forming method embodies a technological idea of switching generation and stop of a magnetic field during a film-forming operation so as to stop the generation of the magnetic field during a period when plasma is generated and generate the magnetic field during a period when plasma is not generated.

## Claims

### Claim 1

A plasma atomic layer deposition apparatus including a processing chamber in which a film is formed over a substrate by plasma processing, the apparatus using a mask made of a magnetic substance disposed over the substrate, the apparatus comprising:
a substrate loading unit over which the substrate is loaded, the substrate loading unit being provided in the processing chamber;
an upper electrode provided in the processing chamber and above the substrate loading unit;
a high frequency power source unit connectable to the upper electrode to supply a high frequency voltage to the upper electrode;
a magnetic field generating unit provided in the substrate loading unit, the magnetic field generating unit including an electromagnet configured to generate a magnetic field when supplied with a current; and
a control unit connected to the magnetic field generating unit and to the high frequency power source unit,
the control unit being configured to execute timing of the magnetic field and plasma generation to ensure that no magnetic field is generated in the electromagnet when plasma is generated in the processing chamber,
the control unit executing the timing by switching the current flow to the electromagnet OFF when the high frequency voltage is ON and switching the current flow to the electromagnet ON when the high frequency voltage is OFF.

### Claim 2 (depends on 1)

The plasma atomic layer deposition apparatus according to claim 1,
wherein the film is a protection film that protects an organic EL element.