# US 12,009,182 B2 · Temperature control method and temperature control device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,009,182 B2 - Document ID: US12009182B2 - Status: Granted - Kind: B2 - Application number: 17/747,504 - Filed: 2022-05-18 - Published: 2022-11-24 - Granted: 2024-06-11 - Earliest claimed: 2021-05-20 - Assignees: Tokyo Electron Limited - Applicants: Tokyo Electron Limited - Inventors: Ryo Matsubara - Web page: https://patentgrep.com/patent/US12009182B2 ## CPC - H01J 37/32522: {Temperature} - H01J 37/32449: {Gas control, e.g. control of the gas flow} - H01J 37/32467: {Material} - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) ## Abstract A temperature control method of a chamber of a plasma processing apparatus includes: (a) providing a substrate in the chamber; (b) measuring a pre-processing temperature of an internal component of the chamber; (c) determining a temperature control condition based on a difference between the pre-processing temperature measured in (b) and a target temperature that has been preset in advance; (d) performing a process including at least one of increasing the temperature of the internal component by a first plasma of a first processing gas and cooling the internal component by purging the chamber with a cooling gas, based on the temperature control condition; and (e) processing the substrate with a second plasma of a second processing gas. ## Claims ### Claim 1 A temperature control method comprising: (a) providing a substrate in a chamber of a plasma processing apparatus; (b) measuring a pre-processing temperature of an internal component of the chamber; (c) determining a temperature control condition based on a difference between the pre-processing temperature measured in (b) and a target temperature that has been preset in advance; (d) performing a process including at least one of increasing a temperature of the internal component by a first plasma of a first processing gas and cooling the internal component by purging the chamber with a cooling gas, based on the temperature control condition; and (e) processing the substrate with a second plasma of a second processing gas. ### Claim 2 (depends on 1) The temperature control method according to claim 1, further comprising: performing a seasoning process prior to (e). ### Claim 3 (depends on 2) The temperature control method according to claim 2, wherein the internal component includes at least one material selected from the group consisting of quartz and ceramics. ### Claim 4 (depends on 3) The temperature control method according to claim 3, wherein the plasma processing apparatus includes a sensor that measures the temperature of the internal component, and the sensor measures the pre-processing temperature of the internal component. ### Claim 5 (depends on 4) The temperature control method according to claim 4, wherein in (d), when the temperature of the internal component is increased by the first plasma, at least one condition selected from the group consisting of a radio frequency power, a pressure inside the chamber, a type of processing gas, a flow rate of the processing gas, a temperature increasing rate, and a temperature increasing time is set. ### Claim 6 (depends on 5) The temperature control method according to claim 5, wherein in (d), when the internal component is cooled by the purging with the cooling gas, at least one condition selected from the group consisting of the pressure inside the chamber, a flow rate of the cooling gas, a type of the cooling gas, and a cooling time is set. ### Claim 7 (depends on 6) The temperature control method according to claim 6, wherein the cooling gas includes at least one selected from the group consisting of helium and nitrogen. ### Claim 8 (depends on 7) The temperature control method according to claim 7, wherein the increasing the temperature of the internal component includes stop increasing the temperature after the temperature is increased to the target temperature which has been preset in advance. ### Claim 9 (depends on 8) The temperature control method according to claim 8, wherein the target temperature is a saturation temperature when a plurality of substrates is processed. ### Claim 10 (depends on 1) The temperature control method according to claim 1, wherein the internal component includes at least one material selected from the group consisting of quartz and ceramics. ### Claim 11 (depends on 1) The temperature control method according to claim 1, wherein the plasma processing apparatus includes a sensor that measures the temperature of the internal component, and the sensor measures the pre-processing temperature of the internal component. ### Claim 12 (depends on 1) The temperature control method according to claim 1, wherein in (d), when the temperature of the internal component is increased by the first plasma, at least one condition selected from the group consisting of a radio frequency power, a pressure inside the chamber, a type of a processing gas, a flow rate of the processing gas, a temperature increasing rate, and a temperature increasing time is set. ### Claim 13 (depends on 1) The temperature control method according to claim 1, wherein in (d), when the internal component is cooled by the purging with the cooling gas, at least one condition selected from the group consisting of the pressure inside the chamber, a flow rate of the cooling gas, a type of the cooling gas, and a cooling time is set. ### Claim 14 (depends on 1) The temperature control method according to claim 1, wherein the cooling gas includes at least one selected from the group consisting of helium and nitrogen. ### Claim 15 (depends on 1) The temperature control method according to claim 1, wherein the increasing the temperature of the internal component includes stop increasing the temperature after the temperature is increased to the target temperature which has been preset in advance. ### Claim 16 (depends on 1) The temperature control method according to claim 1, wherein the target temperature is a saturation temperature when a plurality of substrates is processed. ### Claim 17 A temperature control device of a substrate processing apparatus, wherein the temperature control device executes a process including: (a) providing a substrate in a processing chamber of the substrate processing apparatus; (b) measuring a pre-processing temperature of an internal component of the processing chamber using a sensor; (c) determining a temperature control condition based on a difference between the pre-processing temperature measured in (b) and a target temperature that has been preset in advance; (d) performing a sub-processing including at least one of increasing the temperature of the internal component by a first plasma of a first processing gas and cooling the internal component by purging the processing chamber with a cooling gas, based on the temperature control condition, and (e) processing the substrate with a second plasma of a second processing gas. ### Claim 18 A temperature control device of a substrate processing apparatus, the temperature control device comprising: a memory; and a CPU coupled to the memory and configured to: (a) provide a substrate in a processing chamber of the substrate processing apparatus; (b) measure a pre-processing temperature of an internal component of the processing chamber using a sensor; (c) determine a temperature control condition based on a difference between the pre-processing temperature measured in (b) and a target temperature that has been preset in advance; (d) perform a sub-processing including at least one of increasing the temperature of the internal component by a first plasma of a first processing gas and cooling the internal component by purging the processing chamber with a cooling gas, based on the temperature control condition, and (e) process the substrate with a second plasma of a second processing gas.