# US 12,009,180 B2 · Plasma processing apparatus

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- Number: US 12,009,180 B2
- Document ID: US12009180B2
- Status: Granted
- Kind: B2
- Application number: 17/435,509
- Filed: 2020-08-27
- Published: 2024-01-11
- Granted: 2024-06-11
- Earliest claimed: 2020-08-27
- Assignees: Hitachi High-Tech Corporation
- Applicants: Hitachi High-Tech Corporation
- Inventors: Norihiko Ikeda; Kazuya Yamada
- Web page: https://patentgrep.com/patent/US12009180B2

## CPC

- H01J 37/32183: {Matching circuits}
- H01J 37/32128: {using particular waveforms, e.g. polarised waves}
- H01J 37/32146: {Amplitude modulation, includes pulsing}
- H01J 37/32201: {Generating means}
- H01J 37/32293: {using particular waveforms, e.g. polarised waves}
- H01J 37/32311: {Circuits specially adapted for controlling the microwave discharge}
- H05H 1/46: using applied electromagnetic fields, e.g. high frequency or microwave energy (H05H1/26 takes precedence)
- H10P 50/242: {of Group IV materials}
- H01J 2237/3343: Problems associated with etching
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- H05H: PLASMA TECHNIQUE (apparatus or processes specially adapted for producing X-rays H05G2/00); PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A plasma processing apparatus includes: a processing chamber; a first radio frequency power supply configured to supply a first radio frequency power; a second radio frequency power supply configured to supply a second radio frequency power; and a control device configured to, when the first radio frequency power is modulated by a first waveform having a first period and a second period adjacent to the first period, and the second radio frequency power supply is modulated by a second waveform having a period A and a period B, control the second radio frequency power supply such that each second radio frequency power in the period A is supplied in the first period and the second period, in which an amplitude in the second period is smaller than an amplitude in the first period, and an amplitude in the period A is larger than an amplitude in the period B.

## Claims

### Claim 1

A plasma processing apparatus comprising:
a processing chamber in which a sample is subjected to plasma processing;
a first radio frequency power supply configured to supply a first radio frequency power with which plasma is generated;
a sample stage on which the sample is placed;
a second radio frequency power supply configured to supply a second radio frequency power to the sample stage; and
a control device configured to, when the first radio frequency power is modulated by a first waveform having a first period and a second period adjacent to the first period and the second radio frequency power supply is modulated by a second waveform having a period A and a period B, control the second radio frequency power supply such that each second radio frequency power in the period A is supplied in the first period and the second period, wherein
an amplitude in the second period is smaller than an amplitude in the first period and larger than 0, and
an amplitude in the period A is larger than an amplitude in the period B.

### Claim 2 (depends on 1)

The plasma processing apparatus according to claim 1, wherein
the control device controls the second radio frequency power supply such that each second radio frequency power in the period A is supplied in a part of the first period and a part of the second period.

### Claim 3 (depends on 2)

The plasma processing apparatus according to claim 2, wherein
an amplitude in the period B is zero.

### Claim 4 (depends on 1)

The plasma processing apparatus according to claim 1, wherein
the period A is longer than the first period.

### Claim 5 (depends on 4)

The plasma processing apparatus according to claim 4, wherein
an amplitude in the period B is zero.

### Claim 6 (depends on 1)

The plasma processing apparatus according to claim 1, wherein
the first waveform has a third period, and
an amplitude in the third period is zero.

### Claim 7 (depends on 6)

The plasma processing apparatus according to claim 6, wherein
the control device controls the second radio frequency power supply such that the second radio frequency power is not supplied in the third period.

### Claim 8 (depends on 1)

The plasma processing apparatus according to claim 1, further comprising:
a matching box configured to reduce reflected power of the second radio frequency power, wherein
the control device controls the matching box such that matching of the second radio frequency power is performed after a transition from the first period to the second period or after a transition from the second period to the first period.

### Claim 9 (depends on 1)

The plasma processing apparatus according to claim 1, wherein:
the period A is longer than the second period.

### Claim 10 (depends on 1)

The plasma processing apparatus according to claim 1, wherein
the first radio frequency power supply includes a radio frequency power supply configured to supply a radio frequency power that is not pulse-modulated and a radio frequency power supply configured to supply a pulse-modulated radio frequency power.

### Claim 11 (depends on 10)

The plasma processing apparatus according to claim 10, wherein
the second radio frequency power supply includes a radio frequency power supply configured to supply a radio frequency power that is not pulse-modulated and a radio frequency power supply configured to supply a pulse-modulated radio frequency power.