# US 12,009,033 B2 · ONON sidewall structure for memory device and method for making the same

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- Number: US 12,009,033 B2
- Document ID: US12009033B2
- Status: Granted
- Kind: B2
- Application number: 18/337,498
- Filed: 2023-06-20
- Published: 2023-10-19
- Granted: 2024-06-11
- Earliest claimed: 2021-08-27
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Company Limited
- Inventors: Chen-Ming Huang; Wen-Tuo Huang; Yu-Hsiang Yang; Yu-Ling Hsu; Wei-Lin Chang; Chia-Sheng Lin; ShihKuang Yang; Yu-Chun Chang; Hung-Ling Shih; Po-Wei Liu; Shih-Hsien Chen
- Web page: https://patentgrep.com/patent/US12009033B2

## CPC

- G11C 16/10: Programming or data input circuits
- H10B 41/35: with a cell select transistor, e.g. NAND
- H10B 41/43: comprising only one type of peripheral transistor
- H10D 30/6891: {characterised by the shapes, relative sizes or dispositions of the floating gate electrode}
- H10D 30/711: {having floating bodies}
- H10D 64/015: {removing at least parts of gate spacers, e.g. disposable spacers}
- H10D 64/021: {using multiple gate spacer layers, e.g. bilayered sidewall spacers}
- G11C 16/04: using variable threshold transistors, e.g. FAMOS
- H10D 30/683: {programmed by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling}
- G11C: STATIC STORES (semiconductor memory devices H10B)
- H10B: ELECTRONIC MEMORY DEVICES
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A memory device and method of making the same are disclosed. The memory device includes transistor devices located in both a memory region and a logic region of the device. Transistor devices in the memory region include sidewall spacers having a first oxide layer over a side surface of a gate structure, a first nitride layer over the first oxide layer, a second oxide layer over the first nitride layer, and a second nitride layer over the second oxide layer. Transistor devices in the logic region include sidewall spacers having a first oxide layer over a side surface of a gate structure, a first nitride layer over the first oxide layer, and a second nitride layer over the first nitride layer.

## Claims

### Claim 1

A semiconductor device comprising:
a source;
a drain;
a channel extending between the source and the drain;
a gate structure over the channel; and
a sidewall spacer located on a side surface of the gate structure, the sidewall spacer comprising a first oxide layer over the side surface of the gate structure, a first nitride layer over the first oxide layer, a second oxide layer having a thickness of at least 5 nm over the first nitride layer, and a second nitride layer over the second oxide layer.

### Claim 2 (depends on 1)

The semiconductor device of claim 1, wherein the semiconductor device comprises a memory device.

### Claim 3 (depends on 2)

The semiconductor device of claim 2, wherein the memory device comprises a multi-time programmable (MTP) memory device.

### Claim 4 (depends on 1)

The semiconductor device of claim 1, wherein the first oxide layer includes a portion extending beneath the first nitride layer to the second oxide layer such that the first nitride layer is surrounded on three sides by the first oxide layer and the second oxide layer.

### Claim 5 (depends on 1)

The semiconductor device of claim 1, further comprising a substrate comprising a raised mesa structure, wherein the gate structure and at least a portion of the sidewall spacer is located on the mesa structure.

### Claim 6 (depends on 5)

The semiconductor device of claim 5, wherein the first oxide layer and the first nitride layer are located on the raised mesa structure and the second oxide layer extends over the first nitride layer and along a side wall of the raised mesa structure to a top surface of the substrate.

### Claim 7 (depends on 6)

The semiconductor device of claim 6, wherein the second oxide layer comprises a horizontally-extending portion that extends from the side wall of the raised mesa structure over the top surface of the substrate.

### Claim 8 (depends on 7)

The semiconductor device of claim 7, wherein the horizontally-extending portion of the second oxide layer extends between a lower surface of the second nitride layer and the top surface of the substrate.

### Claim 9 (depends on 1)

The semiconductor device of claim 1, wherein the thickness of the second oxide layer is greater than a thickness of the first oxide layer.

### Claim 10 (depends on 1)

The semiconductor device of claim 1, wherein the second oxide layer has a thickness of 20 nm or less.

### Claim 11 (depends on 1)

The semiconductor device of claim 1, wherein the first oxide layer has a thickness in a range of 2 nm to 10 nm.

### Claim 12 (depends on 1)

The semiconductor device of claim 1, wherein the first nitride layer has a thickness in a range of 5 nm to 15 nm and the second nitride layer has a thickness in a range of 20 nm to 50 nm.

### Claim 13 (depends on 1)

The semiconductor device of claim 1, wherein the sidewall spacer is located over two opposite side surfaces of the gate structure.

### Claim 14

A semiconductor device comprising:
a gate structure over a substrate; and
a sidewall spacer located on a side surface of the gate structure, the sidewall spacer comprising a first oxide layer over the side surface of the gate structure, a first nitride layer over the first oxide layer, a second oxide layer over the first nitride layer, and a second nitride layer over the second oxide layer, wherein the first oxide layer includes a portion extending beneath the first nitride layer to the second oxide layer such that the first nitride layer is surrounded on three sides by the first oxide layer and the second oxide layer.

### Claim 15 (depends on 14)

The semiconductor device of claim 14, wherein a thickness of the second oxide layer is greater than a thickness of the first oxide layer.

### Claim 16 (depends on 14)

The semiconductor device of claim 14, wherein the second oxide layer comprises a horizontally-extending portion that contacts the portion of the first oxide layer extending beneath the first nitride layer and extends beneath the second nitride layer.

### Claim 17 (depends on 16)

The semiconductor structure of claim 16, wherein the substrate comprises a raised mesa structure, the gate structure is located on the raised mesa structure, the horizontally-extending portion of the second oxide layer extends from a sidewall of the raised mesa structure beneath the second nitride layer.

### Claim 18

A method of making a semiconductor device comprising:
forming a gate structure on a substrate;
forming a first oxide layer on a side surface of the gate structure;
forming a first nitride layer over the first oxide layer on the side surface of the gate structure;
forming a second oxide layer having a thickness of at least 5 nm over the first nitride layer on the side surface of the gate structure; and
forming a second nitride layer over the second oxide layer to provide a sidewall spacer on the side surface of the gate structure.

### Claim 19 (depends on 18)

The method of claim 18, wherein forming the first oxide layer and the first nitride layer comprises:
depositing a continuous first oxide layer over the gate structures and the substrate;
depositing a continuous first nitride layer over the continuous first oxide layer;
removing, by etching, horizontally-extending portions of the continuous first oxide layer and the continuous first nitride layer from over a top surface of the gate structures and from over the top surface of the substrate to provide a discrete first oxide layer on a side surface of the gate structure and a discrete first nitride layer over the discrete first oxide layer, wherein the first nitride layer protects a horizontally-extending portion of the first oxide layer underlying the first nitride layer from being etched.

### Claim 20 (depends on 18)

The method of claim 18, wherein forming the second oxide layer comprises:
depositing a continuous second oxide layer over the upper surfaces of the gate structure, the first oxide layer, and the first nitride layer, over the side surface of the first nitride layer, over the upper surface of the substrate, and contacting the horizontally-extending portion of the first oxide layer underlying the first nitride layer such that the first nitride layer is surrounded on opposite lateral side surfaces and a bottom surface of the first nitride layer by the first oxide layer and the second oxide layer.