# US 12,009,018 B2 · Transition metal dichalcogenide based spin orbit torque memory device

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- Number: US 12,009,018 B2
- Document ID: US12009018B2
- Status: Granted
- Kind: B2
- Application number: 17/839,345
- Filed: 2022-06-13
- Published: 2022-09-29
- Granted: 2024-06-11
- Earliest claimed: 2018-06-14
- Assignees: Intel Corporation
- Applicants: Intel Corporation
- Inventors: Chia-Ching Lin; Sasikanth Manipatruni; Tanay Gosavi; Dmitri Nikonov; Benjamin Buford; Kaan Oguz; John J. Plombon; Ian A. Young
- Web page: https://patentgrep.com/patent/US12009018B2

## CPC

- G11C 11/161: {details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell}
- G11C 11/1675: {Writing or programming circuits or methods}
- H10B 61/22: {of the field-effect transistor [FET] type}
- H10N 50/10: Magnetoresistive devices
- H10N 50/80: Constructional details
- H10N 50/85: Materials of the active region
- G11C: STATIC STORES (semiconductor memory devices H10B)
- H10B: ELECTRONIC MEMORY DEVICES
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR

## Abstract

An apparatus is provided which comprises: a stack comprising a magnetic insulating material (MI such as EuS, EuO, YIG, TmIG, or GaMnAs) and a transition metal dichalcogenide (TMD such as MoS2, MoSe2, WS2, WSe2, PtS2, PtSe2, WTe2, MoTe2, or graphene), wherein the magnetic insulating material has a first magnetization; a magnet with a second magnetization, wherein the magnet is adjacent to the TMD of the stack; and an interconnect comprising a spin orbit material, wherein the interconnect is adjacent to the magnet.

## Claims

### Claim 1

An integrated circuit (IC) device, comprising:
a first layer comprising a magnetic material;
a second layer comprising a magnetic material;
a third layer between the first and second layers, wherein the third layer comprises Mo, W, or Pt, and a chalcogen; and
a fourth layer comprising a spin orbit material, wherein the second layer is between the third layer and the fourth layer, and wherein first and second terminals of the IC device are coupled to opposite ends of the fourth layer comprising the spin orbit material.

### Claim 2 (depends on 1)

The IC device of claim 1, wherein the third layer comprises MoS2, MoSe2, WS2, WSe2, PtS2, PtSe2, WTe2, MoTe2.

### Claim 3 (depends on 2)

The IC device of claim 2, wherein the third layer comprises one or more of W, or Pt.

### Claim 4 (depends on 1)

The IC device of claim 1, wherein the first layer comprises one or more of: Eu, S, O, Y, Fe, Tm, Ga, Mn, or As.

### Claim 5 (depends on 1)

The IC device of claim 1, wherein the second layer comprises one or more of Co, Fe, or Ni.

### Claim 6 (depends on 5)

The IC device of claim 5, wherein the second layer comprises O.

### Claim 7 (depends on 1)

The IC device of claim 1, wherein the spin orbit material includes one or more of: β-Tantalum (β-Ta), Ta, β-Tungsten (β-W), W, Platinum (Pt), Copper (Cu) doped with elements including on of Iridium, Bismuth or elements of 3d, 4d, 5d and 4f, 5f periodic groups, Ti, S, W, Mo, Se, B, Sb, Re, La, C, P, La, As, Sc, O, Bi, Ga, Al, Y, In, Ce, Pr, Nd, F, Jr, Mn, Pd, or Fe.

### Claim 8 (depends on 1)

The IC device of claim 1, wherein the spin orbit material includes one of a 2D material, a 3D material, or an antiferromagnetic (AFM) material.

### Claim 9

An IC device comprising:
a bit-line;
a word-line;
a source-line;
a spin orbit material;
a transistor having a gate terminal coupled to the word-line, a first of a source or drain terminal coupled to the source-line; and a second of the source or drain terminal coupled to the spin orbit material;
a material stack comprising:
a first layer comprising a magnetic material and adjacent to the bit-line;
a second layer comprising a magnetic material adjacent to the spin orbit material; and
a third layer between the first and second layers, wherein the third layer comprises MoS2, MoSe2, WS2, WSe2, PtS2, PtSe2, WTe2, or MoTe2.

### Claim 10 (depends on 9)

The IC device of claim 9, wherein the second layer comprises one of a paramagnet or ferromagnet.

### Claim 11 (depends on 9)

The IC device of claim 9, wherein the third layer comprises one or more of Mo, W, or Pt.

### Claim 12 (depends on 9)

The IC device of claim 9, wherein the first layer comprises one or more of: Eu, S, O, Y, Fe, Tm, Ga, Mn, or As.

### Claim 13 (depends on 9)

The IC device of claim 9, wherein the second layer comprises one or more of Co, Fe, or Ni.

### Claim 14 (depends on 13)

The IC device of claim 13, wherein the second layer comprises 0.

### Claim 15 (depends on 9)

The IC device of claim 9, wherein the spin orbit material includes one or more of: β-Tantalum (β-Ta), Ta, β-Tungsten (β-W), W, Platinum (Pt), Copper (Cu) doped with elements including on of Iridium, Bismuth or elements of 3d, 4d, 5d and 4f, 5f periodic groups, Ti, S, W, Mo, Se, B, Sb, Re, La, C, P, La, As, Sc, O, Bi, Ga, Al, Y, In, Ce, Pr, Nd, F, Jr, Mn, Pd, or Fe.

### Claim 16 (depends on 9)

The IC device of claim 9, wherein the spin orbit material includes one of a 2D material, a 3D material, or an antiferromagnetic (AFM) material.

### Claim 17 (depends on 1)

A system comprising:
a memory; and
a processor coupled to the memory, wherein the processor includes the IC device of claim 1.

### Claim 18 (depends on 17)

The system of claim 17, wherein:
the first layer comprises one or more of: Eu, S, O, Y, Fe, Tm, Ga, Mn, or As;
the second layer comprises one or more of Co, Fe, or Ni; and
the third layer comprises one or more of S, Se, or Te and one or more of Mo, W, or Pt.

### Claim 19 (depends on 18)

The system of claim 18, wherein the spin orbit material includes one or more of: β-Tantalum (β-Ta), Ta, β-Tungsten (β-W), W, Platinum (Pt), Copper (Cu) doped with elements including on of Iridium, Bismuth or elements of 3d, 4d, 5d and 4f, 5f periodic groups, Ti, S, W, Mo, Se, B, Sb, Re, La, C, P, La, As, Sc, O, Bi, Ga, Al, Y, In, Ce, Pr, Nd, F, Jr, Mn, Pd, or Fe.