# US 12,007,813 B2 · Semiconductor device for attaching to a flexible display > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,007,813 B2 - Document ID: US12007813B2 - Status: Granted - Kind: B2 - Application number: 18/193,624 - Filed: 2023-03-30 - Published: 2023-07-27 - Granted: 2024-06-11 - Earliest claimed: 2018-09-28 - Assignees: Taiwan Semiconductor Manufacturing Company, Ltd. - Applicants: Taiwan Semiconductor Manufacturing Company Ltd. - Inventors: Cheng-Hao Huang - Web page: https://patentgrep.com/patent/US12007813B2 ## CPC - G06F 1/1652: {the display being flexible, e.g. mimicking a sheet of paper, or rollable} - G09F 9/301: {flexible foldable or roll-able electronic displays, e.g. thin LCD, OLED} - H10D 84/038: {using silicon technology, e.g. SiGe} - H10K 59/87: {Passivation; Containers; Encapsulations} - H10K 71/00: Manufacture or treatment specially adapted for the organic devices covered by this subclass - H10K 77/111: {Flexible substrates} - G02F 1/13458: {Terminal pads} - H10D 86/441: {Interconnections, e.g. scanning lines} - H10D 86/60: wherein the TFTs are in active matrices - H10K 59/131: Interconnections, e.g. wiring lines or terminals - H10K 2102/311: {Flexible OLED} - H10W 72/072: {of bump connectors} - H10W 72/90: Bond pads, in general - Y02E 10/549: Organic PV cells - Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product - G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N) - G09F: DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES - G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION - Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS ## Abstract A semiconductor device includes a substrate, conductive features on the substrate, and a passivation layer over the conductive features to define conductive pads in the respective conductive features through exposed portions of each of the conductive features. Each corner of the conductive pads is free of right angle, the substrate has a pair of long sides from a top view perspective, the shape of each of the conductive pads is a parallelogram. Each of the conductive pads has a pair of long sides and a pair of short sides from a top view perspective, a portion of the conductive pads have the long sides sloped away from a first pad density area of the substrate and toward one long side of the substrate, and the rest of the conductive pads have the long sides sloped toward the first pad density area and toward the other long side of the substrate. ## Claims ### Claim 1 A semiconductor device for attaching to a flexible display, comprising: a substrate including a first area and a second area having a higher pad density than the first area; a plurality of conductive features disposed on the substrate; and a passivation layer disposed over the plurality of conductive features to define a plurality of conductive pads in the respective plurality of conductive features through exposed portions of each of the plurality of conductive features, wherein the substrate has a pair of long sides, each of the plurality of conductive pads is a parallelogram and has a pair of long sides and a pair of short sides, a portion of the plurality of conductive pads have the long sides sloped away from the first area and toward one long side of the substrate, and the rest of the plurality of conductive pads have the long sides sloped toward the first area and toward the other long side of the substrate. ### Claim 2 (depends on 1) The semiconductor device of claim 1, wherein the passivation layer provides trenches to expose portions of the plurality of conductive features. ### Claim 3 (depends on 1) The semiconductor device of claim 1, wherein the short sides of each of the plurality of conductive pads are parallel to the long sides of the substrate. ### Claim 4 (depends on 1) The semiconductor device of claim 1, wherein the first area is located at the center of the substrate. ### Claim 5 (depends on 1) The semiconductor device of claim 1, wherein the substrate further includes at least two second area, and the first area is located between the second areas. ### Claim 6 (depends on 1) The semiconductor device of claim 1, wherein each corner of each of the plurality of conductive pads is free of right angle. ### Claim 7 (depends on 4) The semiconductor device of claim 4, wherein the passivation layer includes silicon nitride (SiN), silicon carbide (SiC), silicon oxide (SiO), and/or silicon oxynitride (SiON). ### Claim 8 (depends on 1) The semiconductor device of claim 1, wherein the semiconductive material includes silicon, silicon-germanium, or other semiconductor materials including III-V or II-VI materials. ### Claim 9 A flexible display, comprising: a flexible substrate including a circuit, and a semiconductor device attached to the flexible substrate; wherein the semiconductor device includes: an interlayer dielectric layer including a first area and a second area having a higher pad density than the first; and a plurality of conductive features surrounded by the interlayer dielectric layer and bonded to the circuit, a passivation layer disposed over the interlayer dielectric layer and the conductive features; wherein the passivation layer defines a plurality of conductive pads in the respective plurality of conductive features through exposed portions of each of the plurality of conductive features, the interlayer dielectric layer has a pair of long sides, each of the plurality of conductive pads is a parallelogram and has a pair of long sides and a pair of short sides, a portion of the plurality of conductive pads have the long sides sloped away from the first area and toward one long side of the interlayer dielectric layer, and the rest of the plurality of conductive pads have the long sides sloped toward the first area and toward the other long side of the interlayer dielectric layer. ### Claim 10 (depends on 9) The flexible display of claim 9, wherein the flexible substrate includes polyimide. ### Claim 11 (depends on 9) The flexible display of claim 9, wherein the semiconductor device is attached to a non-display area of the flexible substrate. ### Claim 12 (depends on 9) The flexible display of claim 9, wherein plurality of conductive features are bonded a conductor of the circuit, and the conductor is located at a non-display area of the flexible substrate. ### Claim 13 (depends on 9) The flexible display of claim 9, further including an organic light-emitting diode formed over the flexible substrate. ### Claim 14 (depends on 13) The flexible display of claim 13, wherein the organic light-emitting diode is located at a display area of the flexible substrate. ### Claim 15 (depends on 13) The flexible display of claim 13, wherein the organic light-emitting diode is located at a central flat portion of the flexible substrate. ### Claim 16 (depends on 13) The flexible display of claim 13, wherein the circuit includes a plurality of conductive lines electrically connected between the semiconductor device and organic light-emitting diode. ### Claim 17 (depends on 9) The flexible display of claim 9, wherein the semiconductor device is positioned at the rear side of the flexible display. ### Claim 18 A semiconductor device for attaching to a flexible display, comprising: a substrate including an interlayer dielectric layer and a passivation layer over the interlayer dielectric layer; wherein the substrate includes a first area and a second area having a higher pad density than the first area from a top view perspective; a plurality of conductive features surrounded by the interlayer dielectric layer; wherein the passivation layer is disposed over the plurality of conductive features, the passivation layer defines a plurality of conductive pads in the respective plurality of conductive features through exposed portions of each of the plurality of conductive features, each of the plurality of conductive pads are disposed on the second area, and each of the plurality of conductive pads is a parallelogram, part of the plurality of conductive pads is slanted away from the first area, and the other part of the plurality of conductive pads is slanted toward the first area. ### Claim 19 (depends on 18) The semiconductor device of claim 18, wherein the substrate further includes a base layer, and the interlayer dielectric layer is formed on the base layer. ### Claim 20 (depends on 19) The semiconductor device of claim 19, wherein the substrate further includes a pre-metal dielectric layer between the base layer and the interlayer dielectric layer.