# US 12,007,482 B2 · Optical proximity sensor and corresponding method of operation > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,007,482 B2 - Document ID: US12007482B2 - Status: Granted - Kind: B2 - Application number: 17/011,867 - Filed: 2020-09-03 - Published: 2021-03-11 - Granted: 2024-06-11 - Earliest claimed: 2019-09-06 - Assignees: STMicroelectronics S.r.l. - Applicants: STMICROELECTRONICS S.r.l. - Inventors: Delfo Nunziato Sanfilippo - Web page: https://patentgrep.com/patent/US12007482B2 ## CPC - G01S 17/36: with phase comparison between the received signal and the contemporaneously transmitted signal - G01J 1/4204: {with determination of ambient light (solar light G01J2001/4266)} - G01S 7/4815: {using multiple transmitters} - G01S 7/4816: {of receivers alone} - G01S 7/4911: Transmitters - G01S 7/4915: Time delay measurement, e.g. operational details for pixel components (signal extraction and conditioning G01S7/493); Phase measurement - G02B 1/11: Anti-reflection coatings - G02B 3/0056: {arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses (G02B3/0043 takes precedence; miniaturised objectives for electronic devices employing wafer level optics G02B13/0085)} - G02B 5/20: Filters (polarising elements G02B5/30) - G01S: RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES - G01J: MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY (light sources F21, H01J, H01K, H05B; investigating properties of materials by optical means G01N) - G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS ## Abstract An optical proximity sensor comprises a solid-state photo-electric converter, a biasing circuit for biasing the solid-state photo-electric converter, and a drive circuit. The drive circuit is configured to control the biasing circuit to apply to the photo-electric converter a bias signal modulated between a first value and a second value, the second value different from the first value, wherein a modulated optical signal is emitted by the solid-state photo-electric converter towards a target object. The drive circuit is configured to receive an electrical output signal from the solid-state photo-electric converter, the electrical output signal being a function of a modulated optical signal received at the solid-state photo-electric converter as a result of reflection of the emitted modulated optical signal at the target object. The drive circuit is configured to perform a phase comparison of the modulated bias signal against the electrical output signal and produce, as a result of the phase comparison, a phase shift signal. The drive circuit is configured to compute a distance between the optical proximity sensor and the target object as a function of the phase shift signal. ## Claims ### Claim 1 An optical proximity sensor comprising: a solid-state photo-electric converter; a biasing circuit configured to bias the solid-state photo-electric converter; and a control circuit, wherein the control circuit is configured to: control the biasing circuit to apply, to the solid-state photo-electric converter, a bias signal modulated between a first value and a second value, the second value different from the first value, both the first value and the second value being higher than a breakdown voltage of the solid-state photo-electric converter, wherein a modulated optical signal is emitted by the solid-state photo-electric converter towards a target object in response to the bias signal being applied to the solid-state photo-electric converter, receive an electrical output signal from the solid-state photo-electric converter, the electrical output signal being a function of a received modulated optical signal that is received at the solid-state photo-electric converter as a result of reflection of the modulated optical signal emitted towards the target object, perform a phase comparison of the bias signal applied to the solid-state photo-electric converter against the electrical output signal received from the solid-state photo-electric converter, produce a phase shift signal based on the phase comparison, the phase shift signal being a function of a phase shift between the modulated optical signal emitted towards the target object and the received modulated optical signal that is received at the solid-state photo-electric converter, and compute a distance between the optical proximity sensor and the target object as a function of the phase shift signal. ### Claim 2 (depends on 1) The optical proximity sensor of claim 1, wherein the biasing circuit includes a modulation circuit configured to modulate periodically the bias signal between the first value and the second value at a frequency between 100 MHz and 3 GHz, and the modulated optical signal emitted towards the target object is periodically modulated at the frequency between 100 MHz and 3 GHz. ### Claim 3 (depends on 1) The optical proximity sensor of claim 1, further comprising: a conditioning circuit configured to condition the electrical output signal from the solid-state photo-electric converter, and provide a conditioned electrical signal to the control circuit. ### Claim 4 (depends on 3) The optical proximity sensor of claim 3, wherein at least two of the solid-state photo-electric converter, the biasing circuit, or the conditioning circuit are implemented on a same semiconductor chip. ### Claim 5 (depends on 1) The optical proximity sensor of claim 1, wherein the solid-state photo-electric converter includes an anti-reflection coating, a background light attenuation filter, and a lens. ### Claim 6 (depends on 1) The optical proximity sensor of claim 1, wherein the solid-state photo-electric converter includes at least one of an array of single photon avalanche diodes, an array of avalanche photodiodes, or a silicon photomultiplier. ### Claim 7 (depends on 6) The optical proximity sensor of claim 6, wherein the solid-state photo-electric converter includes an array of lenses, each lens in the array of lenses having an anti-reflection coating and a background light attenuation filter incorporated therein. ### Claim 8 (depends on 1) The optical proximity sensor of claim 1, wherein the solid-state photo-electric converter includes a reference channel used to evaluate a background light. ### Claim 9 (depends on 1) The optical proximity sensor of claim 1, wherein the control circuit is configured to: perform a plurality of phase comparisons of the modulated bias signal applied to the photo-electric converter against the electrical output signal received from the solid-state photo-electric converter, and produce a plurality of values of the phase shift signal based on the plurality of phase comparisons, and compute a distance between the optical proximity sensor and the target object as a function of the plurality of values of the phase shift signal. ### Claim 10 (depends on 1) The optical proximity sensor of claim 1, wherein the distance is between 0.5 m and 0.15 m. ### Claim 11 A method of operating an optical proximity sensor, the method comprising: applying, to a solid-state photo-electric converter of the optical proximity sensor, a bias signal modulated between a first value and a second value, the second value different from the first value, both the first value and the second value being higher than a breakdown voltage of the solid-state photo-electric converter, wherein a modulated optical signal is emitted by the solid-state photo-electric converter towards a target object in response to the bias signal being applied to the solid-state photo-electric converter; receiving an electrical output signal from the solid-state photo-electric converter, the electrical output signal being a function of a received modulated optical signal that is received at the solid-state photo-electric converter as a result of reflection of the modulated optical signal emitted towards the target object; performing a phase comparison of the modulated bias signal applied to the solid-state photo-electric converter against the electrical output signal received from the solid-state photo-electric converter; producing a phase shift signal based on the phase comparison, the phase shift signal being a function of a phase shift between the modulated optical signal emitted towards the target object and the received modulated optical signal that is received at the solid-state photo-electric converter; and computing a distance between the optical proximity sensor and the target object as a function of the phase shift signal. ### Claim 12 (depends on 11) The method of claim 11, wherein the bias signal is modulated between the first value and the second value at a frequency between 100 MHz and 3 GHz. ### Claim 13 (depends on 11) The method of claim 11, further comprising: conditioning the electrical output signal from the solid-state photo-electric converter with a conditioning circuit; and providing a conditioned electrical signal to the control circuit. ### Claim 14 A proximity sensor, comprising: a substrate; an optical sensor on the substrate, the optical sensor configured to emit a modulated optical signal towards a target object in response to a bias signal being applied to the optical sensor, and detect a reflected modulated optical signal that is received by the optical sensor as a result of the modulated optical signal being reflected off of the target object; a driver circuit on the substrate, the driver circuit configured to apply the bias signal to the optical sensor, the bias signal alternating between a first value and a second value different from the first value, both the first value and the second value being higher than a breakdown voltage of the optical sensor; and a control circuit configured to calculate a phase shift between the modulated optical signal and the reflected modulated optical signal, and determine a distance between the proximity sensor and the target object based on the phase shift. ### Claim 15 (depends on 14) The proximity sensor of claim 14, further comprising: a signal conditioning circuit on the substrate, the signal conditioning circuit configured to process the reflected modulated optical signal for the control circuit, the signal conditioning circuit including at least one of an amplified, an analog-to-digital converter, or a logic interface. ### Claim 16 (depends on 14) The proximity sensor of claim 14, further comprising: an anti-reflection coating on the optical sensor; a filter on the anti-reflection coating; and a lens on the filter. ### Claim 17 (depends on 14) The proximity sensor of claim 14, wherein the bias signal alternates between the first value and the second value at a frequency between 100 MHz and 3 GHz. ### Claim 18 (depends on 14) The proximity sensor of claim 14, wherein the optical sensor includes at least one of an array of single photon avalanche diodes, an array of avalanche photodiodes, or a silicon photomultiplier.