# US 12,007,389 B2 · Field effect transistor, device including the transistor, and methods of forming and using same

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- Number: US 12,007,389 B2
- Document ID: US12007389B2
- Status: Granted
- Kind: B2
- Application number: 17/722,010
- Filed: 2022-04-15
- Published: 2022-07-28
- Granted: 2024-06-11
- Earliest claimed: 2012-04-09
- Applicants: iNanoBio Inc.
- Inventors: Bharath Takulapalli
- Web page: https://patentgrep.com/patent/US12007389B2

## CPC

- G01N 33/54373: {involving physiochemical end-point determination, e.g. wave-guides, FETS, gratings}
- C12Q 1/6874: involving nucleic acid arrays, e.g. sequencing by hybridisation
- G01N 27/414: Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N 27/4145: {specially adapted for biomolecules, e.g. gate electrode with immobilised receptors}
- G01N 27/4146: {involving nanosized elements, e.g. nanotubes, nanowires}
- G01N 33/48721: {Investigating individual macromolecules, e.g. by translocation through nanopores (Coulter counters in general G01N15/12; fabrication methods for nanoscale apertures B81B1/00; sequencing of nucleic acids C12Q1/68)}
- G01N 33/54366: {Apparatus specially adapted for solid-phase testing}
- G01N 33/552: Glass or silica
- H10D 30/025: {of vertical IGFETs (of VDMOS H10D30/0291; of vertical TFTs H10D30/0318)}
- H10D 30/751: {having composition variations in the channel regions}
- H10D 62/118: {Nanostructure semiconductor bodies}
- H10D 62/126: {Top-view geometrical layouts of the regions or the junctions}
- H10P 50/642: {Chemical etching}
- G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q)
- C12Q: MEASURING OR TESTING PROCESSES INVOLVING ENZYMES, NUCLEIC ACIDS OR MICROORGANISMS (immunoassay G01N33/53); COMPOSITIONS OR TEST PAPERS THEREFOR; PROCESSES OF PREPARING SUCH COMPOSITIONS; CONDITION-RESPONSIVE CONTROL IN MICROBIOLOGICAL OR ENZYMOLOGICAL PROCESSES
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

The present disclosure provides an improved field effect transistor and device that can be used to sense and characterize a variety of materials. The field effect transistor and/or device including the transistor may be used for a variety of applications, including genome sequencing, protein sequencing, biomolecular sequencing, and detection of ions, molecules, chemicals, biomolecules, metal atoms, polymers, nanoparticles and the like.

## Claims

### Claim 1

A device comprising:
a substrate comprising a first surface and a second surface opposite the first surface;
an etch region within a portion of the substrate;
an insulating region formed within the substrate and proximate the etch region;
a semiconductor layer overlying the insulating region;
a source region formed using a first portion of the semiconductor layer, the source region overlying the insulating region and overlying the first surface of the substrate;
a drain region formed using a second portion of the semiconductor layer, the drain region overlying the buried insulating region and overlying the second surface of the substrate; and
a channel formed using a third portion of the semiconductor layer,
wherein the device comprises a nanopore formed within the etch region, and
wherein the channel is formed as a bi-feature having an opening of less than 1000 nm.

### Claim 2 (depends on 1)

The device of claim 1, wherein the insulating region comprise a buried oxide.

### Claim 3 (depends on 1)

The device of claim 1, further comprising a thin-film coating comprising one or more of dielectric, organic, inorganic, and biological material.

### Claim 4 (depends on 1)

The device of claim 1, wherein the etch region comprises a conical or pyramidal or spherical shape.

### Claim 5 (depends on 1)

The device of claim 1, wherein the device is operated at frequencies of: kilo hertz, megahertz, or giga hertz.

### Claim 6 (depends on 1)

The device of claim 1, wherein the channel is continuous from the source region to the drain region.

### Claim 7 (depends on 1)

The device of claim 1, wherein the bi-feature has an opening of less than 10 nm.

### Claim 8

A method of forming a sensor device, the method comprising the steps of:
providing a substrate comprising a first surface and a second surface opposite the first surface;
etching a portion of the substrate to form an etch region open to the first surface and the second surface to thereby form a nanopore;
forming an insulating region proximate the etch region;
forming a thin film overlying the insulating region;
forming a source region using the thin film on one side of the nanopore; and
forming a drain region using the thing film on a second side of the nanopore,
wherein a channel region is formed between the source region and the drain region.

### Claim 9 (depends on 8)

The method of claim 8, wherein the etching is along a crystalline plane of the substrate.

### Claim 10 (depends on 8)

The method of claim 8, wherein the thin film is formed using a technique selected from the group consisting of: molecular beam epitaxy and chemical vapor deposition.

### Claim 11 (depends on 8)

The method of claim 8, wherein the thin film comprises one or more of: crystalline material, poly-crystalline material, amorphous material, a metal, and an insulator.