# US 12,007,347 B2 · Sensor

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- Number: US 12,007,347 B2
- Document ID: US12007347B2
- Status: Granted
- Kind: B2
- Application number: 17/754,484
- Filed: 2020-10-02
- Published: 2024-02-15
- Granted: 2024-06-11
- Earliest claimed: 2019-10-02
- Assignees: Oxford Brookes University
- Applicants: Oxford Brookes University
- Inventors: Abusaleh Jabir; Saurabh Khandelwal; Xiaohan Yang
- Web page: https://patentgrep.com/patent/US12007347B2

## CPC

- G01N 27/045: {Circuits (measuring resistance per se G01R27/00, e.g. G01R27/22)}
- G11C 13/0007: {comprising metal oxide memory material, e.g. perovskites}
- G01N 27/06: of a liquid (involving electrolysis G01N27/26)
- G01N 27/128: {Microapparatus}
- G01N 33/0031: {comprising two or more sensors, e.g. a sensor array}
- G11C 13/003: {Cell access}
- G11C 13/004: {Reading or sensing circuits or methods}
- G11C 13/0069: {Writing or programming circuits or methods}
- G11C 2013/0054: {Read is performed on a reference element, e.g. cell, and the reference sensed value is used to compare the sensed value of the selected cell}
- G11C 2013/0073: {Write using bi-directional cell biasing}
- G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q)
- G11C: STATIC STORES (semiconductor memory devices H10B)

## Abstract

A sensor comprises a group of four memristors arranged in an array. Two of the memristors are connected in series as a first pair, and the other two memristors are connected in series as a second pair. The first and second pairs are connected in parallel between two connection points. Each memristor acts as a sensor element because it has an electrical resistance characteristic that is related to exposure to a species to be sensed. In the sensor, the resistance characteristic of the array between the first and second connection points is related to exposure to the species to be sensed. A sensor comprising a larger array can be composed of multiple groups of four memristors.

## Claims

### Claim 1

A sensor comprising:
a plurality of sensor elements arranged in an array;
wherein each of the sensor elements is a memristor that has an electrical resistance characteristic related to exposure of the memristor to a species to be sensed;
wherein the array comprises at least one memristor group;
wherein each said memristor group comprises four of the memristors, wherein the four memristors are connected as a first pair of two memristors in series, and a second pair of two memristors in series, and with the first pair and the second pair connected in parallel between first and second connection points; and
wherein a resistance characteristic of the array between the first and second connection points is related to exposure of the memristors in the array to the species to be sensed.

### Claim 2 (depends on 1)

The sensor according to claim 1 wherein the two memristors of said second pair are connected in series such that the negative terminals of both of them are connected together to a third connection point, and wherein the two memristors of said first pair are connected in series such that the positive terminals of both of them are connected together to a fourth connection point.

### Claim 3 (depends on 2)

The sensor according to claim 2 further comprising a first switch to enable a voltage to be applied to the third connection point and a second switch to enable a voltage to be applied to the fourth connection point, said switches also enabling the third and fourth connection points to be floating.

### Claim 4 (depends on 2)

A method of setting a sensor, the method comprising the steps of:
providing the sensor according to claim 2;
applying a predetermined positive voltage to the third connection point for a period of time, followed by applying a negative voltage pulse to the third connection point; and
applying a predetermined negative voltage to the fourth connection point for a period of time, followed by applying a positive voltage pulse to the fourth connection point.

### Claim 5 (depends on 1)

The sensor according to claim 1 comprising a plurality of the at least one memristor group.

### Claim 6 (depends on 5)

The sensor according to claim 5 wherein the memristor groups are connected in parallel.

### Claim 7 (depends on 5)

The sensor according to claim 5 comprising a recursive architecture, wherein each memristor in a group of four memristors has been replaced with a further memristor group comprising four memristors.

### Claim 8 (depends on 7)

The sensor according to claim 7 wherein the recursion of the architecture is iterated a plurality of times.

### Claim 9 (depends on 1)

The sensor according to claim 1 wherein the plurality of sensor elements arranged in the array is formed as a microelectronic structure.

### Claim 10 (depends on 1)

The sensor according to claim 1 being fabricated on a chip.

### Claim 11 (depends on 1)

The sensor according to claim 1 wherein the sensor is at least one of a gas sensor, a liquid sensor, and a sensor for sensing the species present in a liquid.