# US 12,007,280 B2 · Multi-application optical sensing apparatus and method thereof > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,007,280 B2 - Document ID: US12007280B2 - Status: Granted - Kind: B2 - Application number: 18/179,117 - Filed: 2023-03-06 - Published: 2023-06-29 - Granted: 2024-06-11 - Earliest claimed: 2020-12-03 - Assignees: Artilux, Inc. - Applicants: Artilux, Inc. - Inventors: Chih-Wei Yeh; Hung-Chih Chang; Yun-Chung Na; Tsung-Ting Wu; Shu-Lu Chen - Web page: https://patentgrep.com/patent/US12007280B2 ## CPC - G01J 3/50: using electric radiation detectors - H04N 25/705: Pixels for depth measurement, e.g. RGBZ - G01B 11/24: for measuring contours or curvatures - G01J 3/0208: {using focussing or collimating elements, e.g. lenses or mirrors; performing aberration correction} - G01J 3/51: using colour filters - H04N 25/00: Circuitry of solid-state image sensors [SSIS]; Control thereof - H04N 25/41: {Extracting pixel data from a plurality of image sensors simultaneously picking up an image, e.g. for increasing the field of view by combining the outputs of a plurality of sensors} - H04N 25/53: Control of the integration time - H04N 25/702: SSIS architectures characterised by non-identical, non-equidistant or non-planar pixel layout - H04N 25/533: by using differing integration times for different sensor regions - H04N 25/706: Pixels for exposure or ambient light measuring - H04N 25/707: Pixels for event detection - G01J: MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY (light sources F21, H01J, H01K, H05B; investigating properties of materials by optical means G01N) - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION - G01B: MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS ## Abstract Systems, apparatuses, and methods for multi-application optical sensing are provided. For example, an optical sensing apparatus can include a photodetector array, a first circuitry, and a second circuitry. The photodetector array includes a plurality of photodetectors, wherein a first subset of the plurality of photodetectors are configured as a first region for detecting a first optical signal, and a second subset of the plurality of photodetectors are configured as a second region for detecting a second optical signal. The first circuitry, coupled to the first region, is configured to perform a first function based on the first optical signal to output a first output result. The second circuitry, coupled to the second region, is configured to perform a second function based on the second optical signal to output a second output result. ## Claims ### Claim 1 An optical sensing apparatus, comprising: a light emitter configured to emit an optical signal to a target object; a first die comprising a photodetector, wherein the photodetector is configured to perform optical sensing and comprising: a first region configured to detect a first optical signal with a first wavelength, wherein the first optical signal is a first portion of the optical signal reflected by the target object; and a second region distinct from the first region and configured to detect a second optical signal with a second wavelength which is different from the first wavelength, wherein the second optical signal is a second portion of the optical signal reflected by the target object; a circuitry, coupled to the photodetector, and configured to perform a first function based on the first optical signal to output a first output result and perform a second function based on the second optical signal to output a second output result; and a processing circuitry comprising an output circuitry, coupled to the circuitry, and configured to perform a predetermined function based on the first output result and the second output result, wherein the second wavelength is within SWIR wavelength range, and wherein the predetermined function comprises a material recognition function that determines one or more characteristics of a material, wherein the one or more characteristics of a material comprise a type of the material. ### Claim 2 (depends on 1) The optical sensing apparatus of claim 1, wherein the output circuitry utilizes a difference between the first output result and the second output result to determine the one or more characteristics of the material. ### Claim 3 (depends on 1) The optical sensing apparatus of claim 1, wherein the circuitry operates the first function and the second function at a different time. ### Claim 4 (depends on 1) The optical sensing apparatus of claim 1, further comprising a driver configured to generate a driving signal to the light emitter to generate the optical signal. ### Claim 5 (depends on 4) The optical sensing apparatus of claim 4, wherein the driver is controlled by the processing circuitry to disable and enable the light emitter. ### Claim 6 (depends on 1) The optical sensing apparatus of claim 1, wherein the light emitter comprises multiple light sources which can emit different signals with different wavelengths. ### Claim 7 (depends on 1) The optical sensing apparatus of claim 1, wherein the circuitry is coupled to the first region and the second region. ### Claim 8 (depends on 1) The optical sensing apparatus of claim 1, wherein the photodetector comprises a light-absorption material including germanium, and the light-absorption material is formed on a silicon substrate. ### Claim 9 (depends on 1) The optical sensing apparatus of claim 1, wherein the circuitry is formed on a second die, and the first die is bonded to the second die to form a single chip. ### Claim 10 (depends on 9) The optical sensing apparatus of claim 9, further comprising a circuitry substrate, and wherein the single chip and the light emitter are bonded on the circuitry substrate. ### Claim 11 (depends on 9) The optical sensing apparatus of claim 9, wherein the single chip comprises a bonding interface between the first die and the second die. ### Claim 12 (depends on 1) The optical sensing apparatus of claim 1, further comprising a first wavelength filter arranged to pass light within the first wavelength on the first region. ### Claim 13 (depends on 1) The optical sensing apparatus of claim 1, further comprising a second wavelength filter arranged to pass light within the second wavelength on the second region. ### Claim 14 (depends on 1) The optical sensing apparatus of claim 1, further comprising a microlens formed on the photodetector. ### Claim 15 An optical sensing apparatus, comprising: a light emitter configured to emit an optical signal to a target object; a first die comprising a photodetector, wherein the photodetector is configured to detect a first optical signal with a first wavelength and a second optical signal with a second wavelength which is different from the first wavelength, wherein the first optical signal is a first portion of the optical signal reflected by the target object, and the second optical signal is a second portion of the optical signal reflected by the target object; and a circuitry, coupled to the photodetector, and configured to perform a first function based on the first optical signal to output a first output result and perform a second function based on the second optical signal to output a second output result; a processing circuitry comprising an output circuitry, coupled to the circuitry, and configured to perform a predetermined function based on the first output result and the second output result; wherein the first optical signal is detected by the photodetector at a first time, and the second optical signal is detected by the photodetector at the second time that is different from the first time, and wherein the predetermined function comprises a material recognition function that determines one or more characteristics of a material, wherein the one or more characteristics of a material comprise a type of the material. ### Claim 16 (depends on 15) The optical sensing apparatus of claim 15, wherein the second wavelength is within SWIR wavelength range. ### Claim 17 (depends on 15) The optical sensing apparatus of claim 15, further comprising a circuitry substrate, wherein the photodetector and the light emitter are bonded on the circuitry substrate, and the circuitry substrate is configured to convert analog signal to digital signals and to process the digital signals. ### Claim 18 An optical sensing apparatus, comprising: a circuit substrate; a light emitter formed on the circuit substrate and configured to emit an optical signal to a target object; a chip formed on the circuit substrate and comprising: a die comprising a photodetector, wherein the photodetector is configured to detect a first optical signal with a first wavelength and a second optical signal with a second wavelength which is different from the first wavelength, wherein the first optical signal is a first portion of the optical signal reflected by the target object and the second optical signal is a second portion of the optical signal reflected by the target object; and a circuitry, bonded to the photodetector, and configured to perform a first function based on the first optical signal to output a first output result and perform a second function based on the second optical signal to output a second output result; and a processing circuitry comprising an output circuitry, coupled to the circuitry, and configured to perform a predetermined function based on the first output result and the second output result; wherein the predetermined function comprises a material recognition function that determines one or more characteristics of a material, wherein the one or more characteristics of a material comprise a type of the material. ### Claim 19 (depends on 18) An optical sensing apparatus of claim 18, wherein the chip comprises a bonding interface between the photodetector and the circuitry. ### Claim 20 (depends on 18) An optical sensing apparatus of claim 18, wherein the photodetector comprises a light-absorption material including germanium, and the light-absorption material is formed on a silicon substrate.