# US 12,006,264 B2 · Porous ceramic, member for semiconductor manufacturing apparatus, shower plate and plug

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- Number: US 12,006,264 B2
- Document ID: US12006264B2
- Status: Granted
- Kind: B2
- Application number: 17/288,343
- Filed: 2019-10-24
- Published: 2021-12-09
- Granted: 2024-06-11
- Earliest claimed: 2018-10-30
- Assignees: KYOCERA Corporation
- Applicants: KYOCERA Corporation
- Inventors: Hiromasa Matsufuji
- Web page: https://patentgrep.com/patent/US12006264B2

## CPC

- C04B 35/505: based on yttrium oxide
- C04B 35/488: Composites
- C04B 38/0054: {the pores being microsized or nanosized}
- C04B 38/0074: {expressed as porosity percentage}
- H01J 37/3244: {Gas supply means}
- H05H 1/46: using applied electromagnetic fields, e.g. high frequency or microwave energy (H05H1/26 takes precedence)
- H10P 50/242: {of Group IV materials}
- C04B 2235/3205: Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B 2235/3217: Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
- C04B 2235/3225: Yttrium oxide or oxide-forming salts thereof
- C04B 2235/3246: Stabilised zirconias, e.g. YSZ or cerium stabilised zirconia
- C04B 2235/3248: Zirconates or hafnates, e.g. zircon
- C04B 2235/3272: Iron oxides or oxide forming salts thereof, e.g. hematite, magnetite
- C04B 2235/3418: Silicon oxide, silicic acids or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint
- C04B 2235/405: Iron group metals
- C04B 2235/5445: submicron sized, i.e. from 0,1 to 1 micron
- C04B 2235/6567: Treatment time
- C04B 2235/72: Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
- C04B 2235/728: Silicon content
- C04B 2235/76: Crystal structural characteristics, e.g. symmetry
- C04B 2235/77: Density
- C04B 2235/80: Phases present in the sintered or melt-cast ceramic products other than the main phase
- H01J 2237/334: Etching
- C04B: LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE {(roofing granules E04D7/005)}; CERAMICS (devitrified glass-ceramics C03C10/00); REFRACTORIES; TREATMENT OF NATURAL STONE
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- H05H: PLASMA TECHNIQUE (apparatus or processes specially adapted for producing X-rays H05G2/00); PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A porous ceramic of the present disclosure contains yttrium zirconate and yttrium oxide, and at least one of them is a main component. A member for a semiconductor manufacturing apparatus such as a shower plate, a plug or the like in a semiconductor manufacturing apparatus is made of the above porous ceramic.

## Claims

### Claim 1

A porous ceramic comprising yttrium zirconate and yttrium oxide, wherein at least one of them is a main component.

### Claim 2 (depends on 1)

The porous ceramic according to claim 1, comprising the yttrium zirconate as a main component and further comprising yttrium oxide.

### Claim 3 (depends on 1)

The porous ceramic according to claim 1, comprising the yttrium oxide as a main component and further comprising yttrium zirconate.

### Claim 4 (depends on 1)

The porous ceramic according to claim 1, comprising the yttrium zirconate and the yttrium oxide as main components.

### Claim 5 (depends on 1)

The porous ceramic according to claim 1, comprising a pore area occupancy of 20 to 45 area %.

### Claim 6 (depends on 1)

The porous ceramic according to claim 1, comprising a mean pore diameter of 1 μm to 6 μm.

### Claim 7 (depends on 1)

The porous ceramic according to claim 1, wherein a diffraction peak I1 of a (222) surface of yttrium zirconate (YZrO3) obtained by X-ray diffraction is shifted to a low angle side, and a diffraction peak I2 of a (222) plane of yttrium oxide (Y2O3) is shifted to a high angle side.

### Claim 8 (depends on 7)

The porous ceramic according to claim 7, wherein absolute values of a shift amount Δ1 of the diffraction peak I1 and a shift amount Δ2 of the diffraction peak I2 are both be 0.5° or less.

### Claim 9 (depends on 1)

The porous ceramic according to claim 1, comprising at least one of iron, cobalt and nickel, wherein the total content of these metal elements is 0.1% by mass or less.

### Claim 10 (depends on 1)

A member for a semiconductor manufacturing apparatus comprising the porous ceramic according to claim 1.

### Claim 11 (depends on 10)

A shower plate comprising the member for the semiconductor manufacturing apparatus according to claim 10.

### Claim 12 (depends on 10)

A plug comprising the member for the semiconductor manufacturing apparatus according to claim 10.