# US 12,006,221 B2 · Direct graphene transfer and graphene-based devices

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- Number: US 12,006,221 B2
- Document ID: US12006221B2
- Status: Granted
- Kind: B2
- Application number: 17/546,488
- Filed: 2021-12-09
- Published: 2022-03-31
- Granted: 2024-06-11
- Earliest claimed: 2017-11-17
- Assignees: Corning Incorporated
- Applicants: Corning Incorporated; Fundació Institut de Ciències Fotòniques (ICFO); Institució Catalana de Recerca i Estudis Avançats
- Inventors: Therese Francoise Arliguie; Theresa Chang; Miriam Marchena Martin-Francés; Prantik Mazumder; Valerio Pruneri; Frederic Christian Wagner
- Web page: https://patentgrep.com/patent/US12006221B2

## CPC

- C01B 32/194: After-treatment
- B05D 1/005: {Spin coating}
- B05D 3/12: by mechanical means
- B05D 2350/60: Adding a layer before coating
- B05D 2505/50: Polyimides
- C01B 2204/22: Electronic properties
- C01B: NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; {METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C}
- B05D: PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL (conveying articles or workpieces through baths of liquid B65G, e.g. B65G49/02)

## Abstract

A method of forming a functionalized device substrate is provided that includes the steps of: forming a conductive layer on a growth substrate; applying a polymeric layer to a device substrate, wherein a coupling agent couples the polymeric layer to the device substrate; coupling the polymeric layer to the conductive layer on the growth substrate; and peeling the growth substrate from the conductive layer.

## Claims

### Claim 1

A functionalized device substrate, comprising:
a substrate defining a surface;
a polyimide layer disposed over the surface of the substrate, wherein an aminosilane couples the polyimide layer to the surface; and
a graphene layer coupled to the polyimide layer, wherein the graphene layer has a sheet resistance of from about 100 Ohm/sq to about 600 Ohm/sq.

### Claim 2 (depends on 1)

The device substrate of claim 1, wherein the substrate comprises at least one of a silicon wafer, a polymeric material, a glass, a glass-ceramic and a ceramic.

### Claim 3 (depends on 1)

The device substrate of claim 1, wherein the aminosilane is dispersed within the polyimide layer, as derived from about 0.1 wt. % to 10 wt. % aminosilane in a precursor mixture of a polyimide and a solvent.

### Claim 4 (depends on 1)

The device substrate of claim 1, wherein the aminosilane is an aminosilane layer.

### Claim 5

A functionalized device substrate, comprising:
a substrate defining a surface;
a polyimide layer disposed over the surface of the substrate, wherein an aminosilane couples the polyimide layer to the surface; and
a graphene layer coupled to the polyimide layer, wherein the graphene layer has a sheet resistance of from about 100 Ohm/sq to about 600 Ohm/sq, and wherein the graphene layer is as-pressed against the polyimide layer at a pressure of from about 150 psi to about 350 psi.

### Claim 6 (depends on 5)

The device substrate of claim 5, wherein the substrate comprises at least one of a silicon wafer, a polymeric material, a glass, a glass-ceramic and a ceramic.

### Claim 7 (depends on 5)

The device substrate of claim 5, wherein the aminosilane is dispersed within the polyimide layer, as derived from about 0.1 wt. % to 10 wt. % aminosilane in a precursor mixture of a polyimide and a solvent.

### Claim 8 (depends on 5)

The device substrate of claim 5, wherein the aminosilane is an aminosilane layer.

### Claim 9 (depends on 5)

The device substrate of claim 5, wherein the graphene layer is pressed against the polyimide layer at a temperature of from about 50° C. to about 200° C.

### Claim 10 (depends on 5)

The device substrate of claim 5, wherein the graphene layer is pressed against the polyimide layer at a temperature of from about 129° C. to about 190° C.

### Claim 11

A functionalized device substrate, comprising:
a substrate defining a surface;
a polymer layer disposed over the surface of the substrate, wherein an aminosilane couples the polymer layer to the surface; and
a graphene layer coupled to the polymer layer, wherein the graphene layer has a sheet resistance of from about 100 Ohm/sq to about 600 Ohm/sq, and further wherein the polymer layer is composed of a polyimide or a polythiophene.

### Claim 12 (depends on 11)

The device substrate of claim 11, wherein the substrate comprises at least one of a silicon wafer, a polymeric material, a glass, a glass-ceramic and a ceramic.

### Claim 13 (depends on 11)

The device substrate of claim 11, wherein the aminosilane is dispersed within the polymer layer, as derived from about 0.1 wt. % to 10 wt. % aminosilane in a precursor mixture of a polyimide and a solvent.

### Claim 14 (depends on 11)

The device substrate of claim 11, wherein the aminosilane is an aminosilane layer.

### Claim 15 (depends on 11)

The device substrate of claim 11, wherein the graphene layer has a sheet resistance of from about 100 Ohm/sq to about 400 Ohm/sq.

### Claim 16 (depends on 1)

The device substrate of claim 1, wherein the graphene layer has a sheet resistance of from about 100 Ohm/sq to about 400 Ohm/sq.

### Claim 17 (depends on 5)

The device substrate of claim 5, wherein the graphene layer has a sheet resistance of from about 100 Ohm/sq to about 400 Ohm/sq.