# US 12,006,209 B2 · MEMS and NEMS structures

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- Number: US 12,006,209 B2
- Document ID: US12006209B2
- Status: Granted
- Kind: B2
- Application number: 16/980,792
- Filed: 2019-03-14
- Published: 2020-12-31
- Granted: 2024-06-11
- Earliest claimed: 2018-03-14
- Assignees: Obsidian Sensors, Inc.
- Applicants: Obsidian Sensors, Inc.
- Inventors: John Hong; Tallis Chang; Edward Chan; Bing Wen; Yaoling Pan; Sean Andrews
- Web page: https://patentgrep.com/patent/US12006209B2

## CPC

- B81C 1/00595: {Control etch selectivity}
- B81C 1/00634: {Processes for shaping materials not provided for in groups B81C1/00444 - B81C1/00626}
- B81B 3/0081: {Thermal properties}
- B81C 1/00111: {Tips, pillars, i.e. raised structures (microneedles A61M37/0015)}
- B81C 1/0069: {Thermal properties, e.g. improve thermal insulation}
- G01J 5/20: using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
- B81B 2201/0207: Bolometers
- B81B 2203/019: characterized by their profile
- B81C 2201/0105: Sacrificial layer
- B81C 2201/014: by depositing an etch stop layer, e.g. silicon nitride, silicon oxide, metal
- B81C 2201/0159: Lithographic techniques not provided for in B81C2201/0157
- B81C: PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS (making microcapsules or microballoons B01J13/02; processes or apparatus specially adapted for the manufacture or treatment of piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/01)
- B81B: MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES (piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/00, H10N35/00)
- G01J: MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY (light sources F21, H01J, H01K, H05B; investigating properties of materials by optical means G01N)

## Abstract

A method of manufacturing an electromechanical systems structure includes manufacturing sub-micron structural features. In some embodiments, the structural features are less than the lithographic limit of a lithography process.

## Claims

### Claim 1

A method of manufacturing an electromechanical systems structure comprising:
providing a stack, wherein the stack comprises:
a structural layer extending in a plane,
a sidewall layer comprising:
a first portion lying in a plane parallel to the structural layer plane and
a second portion lying in a plane transverse to the structural layer plane,
an etch-stop layer, positioned between the sidewall layer and the structural layer,
comprising an etch-selectivity different from an etch-selectivity of the structural
layer and an etch-selectivity of the sidewall layer, and
a mold comprising a wall parallel to the sidewall layer's second portion;
positioning a sacrificial layer between the structural layer and a substrate;
etching the sidewall layer's first portion to expose the etch-stop layer;
removing the mold;
etching the etch-stop layer such that the sidewall layer's second portion masks a portion of the etch-stop layer;
removing the sidewall layer's second portion; and
etching the structural layer such that the portion of the etch-stop layer masks a portion of the structural layer.

### Claim 2 (depends on 1)

The method of claim 1, wherein providing the structure comprises:
adhering the sidewall layer to the etch stop layer; and
adhering the etch stop layer to the structural layer.

### Claim 3 (depends on 1)

The method of claim 1, wherein providing the structure comprises:
adhering the sidewall layer to the mold such that the sidewall layer's second portion is adhered to the mold; and
adhering the sidewall layer to the etch-stop layer such that the sidewall layer's first portion is attached to the etch-stop layer.

### Claim 4 (depends on 1)

The method of claim 1, further comprising removing the mold after removing the sidewall layer's first portion.

### Claim 5 (depends on 1)

The method of claim 1, further comprising patterning the mold using a lithography process, wherein the sidewall layer's second portion is thinner than a lithographic limit of the lithography process.

### Claim 6 (depends on 1)

The method of claim 1, further comprising:
providing a glass substrate;
attaching the portion of the structural layer to the glass substrate; and
attaching a bolometer pixel to the portion of the structural layer.

### Claim 7 (depends on 1)

The method of claim 1, further comprising:
providing an electromechanical systems device; and
attaching the portion of the etch stop layer to the electromechanical systems device.

### Claim 8 (depends on 1)

The method of claim 1, further comprising:
manufacturing an electromechanical systems device by LCD-TFT; and
coupling the structure to the electromechanical systems device.

### Claim 9 (depends on 1)

The method of claim 1, further comprising removing the sacrificial layer after etching the structural layer.

### Claim 10 (depends on 9)

The method of claim 9, wherein providing the stack comprises:
providing the substrate;
after providing the substrate, adhering the sacrificial layer to the substrate;
after adhering the sacrificial layer to the substrate, adhering the structural layer to the sacrificial layer;
after adhering the structural layer to the sacrificial layer, adhering the etch stop layer to the structural layer;
after adhering the etch stop layer to the structural layer, adhering the mold to the etch stop layer;
after adhering the mold to the etch stop layer, patterning the mold using a lithography process,
wherein the sidewall layer's second portion is thinner than a lithographic limit of the lithography process; and
after patterning the mold, adhering the sidewall layer to the mold and to the etch stop layer.

### Claim 11

A bolometer comprising:
a glass substrate;
a structure coupled to the glass substrate; and
a bolometer pixel coupled to the structure,
wherein the structure is manufactured by:
providing a stack, wherein the stack comprises:
a structural layer extending in a plane,
a sidewall layer comprising:
a first portion lying in a plane parallel to the structural layer plane and
a second portion lying in a plane transverse to the structural layer plane,
an etch-stop layer, positioned between the sidewall layer and the structural layer, comprising an etch-selectivity different from an etch-selectivity of the structural layer and an etch-selectivity of the sidewall layer, and
a mold comprising a wall parallel to the sidewall layer's second portion;
positioning a sacrificial layer between the structural layer and a substrate;
etching the sidewall layer's first portion to expose the etch-stop layer;
removing the mold;
etching the etch-stop layer such that the sidewall layer's second portion masks a portion of the etch-stop layer;
removing the sidewall layer's second portion; and
etching the structural layer such that the portion of the etch-stop layer masks a portion of the structural layer.

### Claim 12 (depends on 11)

The bolometer of claim 11, wherein:
the portion of the structural layer is attached to the glass substrate; and
the bolometer pixel is attached to the portion of the structural layer.

### Claim 13 (depends on 11)

The bolometer of claim 11, wherein the bolometer pixel is attached to the portion of the etch stop layer.

### Claim 14 (depends on 11)

The bolometer of claim 11, wherein the structure is manufactured further by removing the sacrificial layer after etching the structural layer.

### Claim 15 (depends on 14)

The bolometer of claim 14, wherein providing the stack comprises:
providing the substrate;
after providing the substrate, adhering the sacrificial layer to the substrate;
after adhering the sacrificial layer to the substrate, adhering the structural layer to the sacrificial layer;
after adhering the structural layer to the sacrificial layer, adhering the etch stop layer to the structural layer;
after adhering the etch stop layer to the structural layer, adhering the mold to the etch stop layer;
after adhering the mold to the etch stop layer, patterning the mold using a lithography process,
wherein the sidewall layer's second portion is thinner than a lithographic limit of the lithography process; and
after patterning the mold, adhering the sidewall layer to the mold and to the etch stop layer.