# US 12,004,433 B2 · Multi-bit storage device using phase change material

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- Number: US 12,004,433 B2
- Document ID: US12004433B2
- Status: Granted
- Kind: B2
- Application number: 17/810,688
- Filed: 2022-07-05
- Published: 2024-01-11
- Granted: 2024-06-04
- Earliest claimed: 2022-07-05
- Assignees: Toshiba Global Commerce Solutions, Inc.
- Applicants: Toshiba Global Commerce Solutions Holdings Corporation
- Inventors: Timothy Crockett; Lester Bartus, Jr.
- Web page: https://patentgrep.com/patent/US12004433B2

## CPC

- H10N 70/826: {adapted for essentially vertical current flow, e.g. sandwich or pillar type devices}
- G11C 13/0004: {comprising amorphous/crystalline phase transition cells}
- G11C 13/0038: {Power supply circuits}
- G11C 13/0069: {Writing or programming circuits or methods}
- H10B 63/20: {comprising selection components having two electrodes, e.g. diodes}
- H10N 70/231: {based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect}
- H10N 70/253: {having three or more electrodes, e.g. transistor-like devices}
- H10N 70/8413: {adapted for resistive heating}
- H10N 70/8828: {Tellurides, e.g. GeSbTe}
- G11C 2013/009: {Write using potential difference applied between cell electrodes}
- G11C 2213/79: Array wherein the access device being a transistor
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- G11C: STATIC STORES (semiconductor memory devices H10B)
- H10B: ELECTRONIC MEMORY DEVICES

## Abstract

A non-volatile multi-bit storage device that includes a phase change material doped with n-type or p-type semiconductor impurities, a first set of electrodes ohmically coupled to the phase change material, a second set of electrodes configured to apply an electric field across the phase change material. To program the non-volatile multi-bit storage device, an electrical field is applied to the phase change material as crystal annealing cool down is performed. Application of the electric field during the crystal annealing cool down forms a rectified current path through the phase change material.

## Claims

### Claim 1

A non-volatile multi-bit storage device comprising:
a phase change material doped with n-type or p-type semiconductor impurities configured to form a rectified current path through the phase change material responsive to application of an electric field across the phase change material;
a pair of phase change material electrodes ohmically coupled to the phase change material and located on first and second opposing sides of the phase change material; and
a pair of electric field electrodes separated from the phase change material by a distance configured to form the electric field across the phase change material.

### Claim 2 (depends on 1)

The device of claim 1, wherein each phase change material electrode is located between a respective one of the pair of electric field electrodes and the phase change material.

### Claim 3 (depends on 1)

The device of claim 1, wherein the pair of electric field electrodes is a first pair of electric field electrodes, wherein the device further comprises:
a second pair of electric field electrodes located at third and fourth opposing sides of the phase change material.

### Claim 4 (depends on 3)

The device of claim 3, wherein each of the second pair of electric field electrodes is separated from the phase change material by a dielectric gap.

### Claim 5 (depends on 1)

The device of claim 1, wherein the pair of phase change material electrodes is coupled to a first data bit line.

### Claim 6 (depends on 5)

The device of claim 5, wherein the pair of electric field electrodes is coupled to a second data bit line.

### Claim 7 (depends on 6)

The device of claim 6, wherein phase change material is configured to store the second data bit line as at least one of a crystalline state of the phase change material or an amorphous state of the phase change material.

### Claim 8 (depends on 1)

The device of claim 1, wherein the pair of phase change material electrodes is different from the pair of electric field electrodes.

### Claim 9 (depends on 1)

The device of claim 1, wherein the device is a phase-change random-access memory (PRAM) device.

### Claim 10

A non-volatile multi-bit storage device comprising:
a phase change material configured to change between a crystalline state and an amorphous state to store a first data bit in the phase change material; and
n-type or p-type semiconductor impurities included in the phase change material at a concentration that is configured to form a rectified current path through the phase change material responsive to application of an electric field across the phase change material to store a second data bit in the phase change material.

### Claim 11 (depends on 10)

The device of claim 10, wherein the device is a phase-change random-access memory (PRAM) device.