# US 12,004,426 B2 · Terahertz detector and method of manufacturing terahertz detector > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,004,426 B2 - Document ID: US12004426B2 - Status: Granted - Kind: B2 - Application number: 17/418,967 - Filed: 2019-10-10 - Published: 2022-04-14 - Granted: 2024-06-04 - Earliest claimed: 2018-12-28 - Assignees: Nuctech Company Limited; Tsinghua University - Applicants: Nuctech Company Limited; Tsinghua University - Inventors: Ziran Zhao; Yingxin Wang; Meng Chen; Xuming Ma - Web page: https://patentgrep.com/patent/US12004426B2 ## CPC - H10N 15/15: {Thermoelectric active materials} - G01J 5/34: using capacitors, e.g. pyroelectric capacitors - H10N 15/00: Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect (integrated devices or assemblies of multiple devices H10N19/00) - H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR - G01J: MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY (light sources F21, H01J, H01K, H05B; investigating properties of materials by optical means G01N) ## Abstract A terahertz detector and a method of manufacturing a terahertz detector, wherein the terahertz detector including a substrate (2) and at least one detection unit. Each detection unit includes: a channel material (1) arranged on the substrate, two electrodes (3, 4) respectively in ohmic contact with both ends of the channel material (1) in a longitudinal direction, and a three-dimensional grapheme (5) in direct or indirect thermal contact with the channel material (1). ## Claims ### Claim 1 A terahertz detector, comprising: a substrate; and at least one detection unit, wherein each detection unit comprises: a channel material arranged on the substrate, two electrodes respectively in ohmic contact with both ends of the channel material in a longitudinal direction, and a three-dimensional graphene in direct or indirect thermal contact with the channel material, wherein the substrate has a U-shaped structure, both ends of the channel material in the longitudinal direction are respectively fixed on both side portions of the U-shaped structure, and the three-dimensional graphene is arranged between a bottom of the U-shaped structure and the channel material. ### Claim 2 (depends on 1) The terahertz detector of claim 1, wherein the three-dimensional graphene is in direct or indirect thermal contact with one end of the channel material. ### Claim 3 (depends on 2) The terahertz detector of claim 2, wherein the three-dimensional graphene is arranged at a contact between the channel material and the electrode. ### Claim 4 (depends on 3) The terahertz detector of claim 3, wherein the three-dimensional graphene has a cuboid structure with a long side parallel to the longitudinal direction of the channel material. ### Claim 5 (depends on 2) The terahertz detector of claim 2, wherein the three-dimensional graphene has a cuboid structure with a long side parallel to the longitudinal direction of the channel material. ### Claim 6 (depends on 1) The terahertz detector of claim 1, wherein the three-dimensional graphene is adhered to the channel material. ### Claim 7 (depends on 6) The terahertz detector of claim 6, wherein the three-dimensional graphene has a cuboid structure with a long side parallel to the longitudinal direction of the channel material. ### Claim 8 (depends on 1) The terahertz detector of claim 1, wherein each electrode has two ends that extend to an outside of the channel material in a direction perpendicular to the longitudinal direction of the channel material and that are connected to the substrate. ### Claim 9 (depends on 1) The terahertz detector of claim 1, wherein the three-dimensional graphene has a cuboid structure with a long side parallel to the longitudinal direction of the channel material. ### Claim 10 (depends on 1) The terahertz detector of claim 1, wherein the substrate comprises a first substrate and a second substrate arranged at a distance from the first substrate, the channel material of each detection unit has a first end in the longitudinal direction that is connected to the first substrate, and a second end in the longitudinal direction protruding from a side of the second substrate away from the first substrate, both electrodes of each detection unit are respectively arranged on the first substrate and the second substrate, and the three-dimensional graphene is arranged on the second substrate and is in thermal contact with the second end of the channel material protruding from the second substrate. ### Claim 11 (depends on 10) The terahertz detector of claim 10, wherein the plurality of detection units are arranged in a plane array or a linear array. ### Claim 12 (depends on 1) The terahertz detector of claim 1, wherein the substrate comprises a first substrate and at least one second substrate arranged at a distance from the first substrate, the at least one detection unit is arranged in a one-to-one correspondence with the at least one second substrate; wherein the channel material of each detection unit is arranged on the second substrate, first ends of both electrodes of each detection unit are connected to the first substrate and protrude from a side of the first substrate away from the second substrate, and second ends of both electrodes of the each detection unit are in ohmic contact with both ends of the channel material arranged on the second substrate in the longitudinal direction, and the three-dimensional graphene is arranged on the second substrate. ### Claim 13 (depends on 12) The terahertz detector of claim 12, further comprising an insulating and thermally conductive layer arranged between the channel material and the three-dimensional graphene. ### Claim 14 (depends on 13) The terahertz detector of claim 13, wherein the plurality of detection units are arranged in a plane array or a linear array. ### Claim 15 (depends on 12) The terahertz detector of claim 12, wherein the first end of each electrode is provided with a tapered pin structure. ### Claim 16 (depends on 15) The terahertz detector of claim 15, wherein the plurality of detection units are arranged in a plane array or a linear array. ### Claim 17 (depends on 12) The terahertz detector of claim 12, wherein the plurality of detection units are arranged in a plane array or a linear array. ### Claim 18 (depends on 1) The terahertz detector of claim 1, wherein the three-dimensional graphene has a cuboid structure with a long side parallel to the longitudinal direction of the channel material. ### Claim 19 A method of manufacturing a terahertz detector, comprising: preparing a channel material; transferring the channel material to a substrate having a U-shaped structure; making two electrodes on both ends of the channel material in a longitudinal direction; preparing a three-dimensional graphene; and fixing the three-dimensional graphene to the channel material, wherein transferring the channel material to a substrate comprises fixing both ends of the channel material in the longitudinal direction respectively on both side portions of the U-shaped structure, and fixing the three-dimensional graphene to the channel material comprises arranging the three-dimensional graphene between a bottom of the U-shaped structure and the channel material.