# US 12,004,413 B1 · Apparatus and method for manufacturing a display device

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- Number: US 12,004,413 B1
- Document ID: US12004413B1
- Status: Granted
- Kind: B1
- Application number: 18/479,202
- Filed: 2023-10-02
- Granted: 2024-06-04
- Earliest claimed: 2023-03-24
- Assignees: Samsung Display Co., Ltd.
- Applicants: Samsung Display Co., Ltd.
- Inventors: Jeongkuk Kim; Heemin Park; Duckjung Lee; Sungsoon Im
- Web page: https://patentgrep.com/patent/US12004413B1

## CPC

- H10K 71/166: {using selective deposition, e.g. using a mask}
- C23C 14/042: {using masks}
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)

## Abstract

A method of manufacturing a display device includes arranging a display substrate in a chamber, arranging a mask assembly in the chamber, and supplying a deposition material to the mask assembly by a deposition source. The arranging of the mask assembly includes disposing a stopping layer including a stopping layer opening on a first mask layer, disposing an inorganic layer on the stopping layer, forming a first mask opening in the first mask layer, and forming an inorganic opening of the inorganic layer by etching the inorganic layer corresponding to the stopping layer opening.

## Claims

### Claim 1

A method of manufacturing a display device, the method comprising:
arranging a display substrate in a chamber,
arranging a mask assembly in the chamber; and
supplying a deposition material to the mask assembly by a deposition source,
wherein the arranging of the mask assembly comprises:
disposing a stopping layer including a stopping layer opening on a first mask layer;
disposing an inorganic layer on the stopping layer;
forming a first mask opening in the first mask layer; and
forming an inorganic opening of the inorganic layer by etching the inorganic layer corresponding to the stopping layer opening.

### Claim 2 (depends on 1)

The method of claim 1, wherein, in a plan view, a shape of the stopping layer opening formed in the stopping layer and a shape of the inorganic opening formed in the inorganic layer are identical.

### Claim 3 (depends on 1)

The method of claim 1, wherein
the disposing of the inorganic layer comprises:
disposing a first inorganic layer on the stopping layer; and
disposing, on the first inorganic layer, a second inorganic layer having an etching selectivity ratio higher than an etching selectivity ratio of the first inorganic layer, and
the etching of the inorganic layer comprises:
etching the first inorganic layer corresponding to the stopping layer opening; and
etching the second inorganic layer corresponding to the stopping layer opening.

### Claim 4 (depends on 3)

The method of claim 3, wherein a number of first inorganic openings formed in the first inorganic layer corresponds to a number of second inorganic openings formed in the second inorganic layer.

### Claim 5 (depends on 4)

The method of claim 4, wherein, in a plan view, a shape of the first inorganic openings formed in the first inorganic layer and a shape of the second inorganic openings formed in the second inorganic layer are identical.

### Claim 6 (depends on 1)

The method of claim 1, wherein
the disposing of the stopping layer comprises:
disposing, on the first mask layer, a first photoresist layer including a first photo opening;
disposing the stopping layer on the first photoresist layer; and
removing the first photoresist layer.

### Claim 7 (depends on 1)

The method of claim 1, wherein
the forming of the first mask opening comprises:
disposing, under the first mask layer, a second photoresist layer including a second photo opening;
etching the first mask layer corresponding to the second photo opening; and
removing the second photoresist layer.

### Claim 8 (depends on 7)

The method of claim 7, wherein the etching of the inorganic layer is performed between the etching of the first mask layer and the removing of the second photoresist layer.

### Claim 9

An apparatus for manufacturing a display device, the apparatus comprising:
a chamber;
a mask assembly arranged in the chamber and facing a display substrate; and
a deposition source arranged in the chamber, facing the mask assembly, and supplying a deposition material that passes through the mask assembly and is deposited on the display substrate, wherein
the mask assembly comprises:
a first mask layer including a first mask opening;
a stopping layer disposed on the first mask layer and including a plurality of stopping layer openings corresponding to the first mask opening; and
an inorganic layer disposed on the stopping layer and including a plurality of inorganic openings corresponding to the plurality of stopping layer openings,
the inorganic layer comprises:
a first inorganic layer; and
a second inorganic layer disposed on the first inorganic layer and having an etching selectivity ratio higher than an etching selectivity ratio of the first inorganic layer, and
the plurality of inorganic openings comprise:
a plurality of first inorganic openings arranged in the first inorganic layer; and
a plurality of second inorganic openings arranged in the second inorganic layer and corresponding to the plurality of first inorganic openings.

### Claim 10 (depends on 9)

The apparatus of claim 9, wherein a number of the plurality of first inorganic openings corresponds to a number of the plurality of second inorganic openings.

### Claim 11 (depends on 9)

The apparatus of claim 9, wherein, in a plan view, a shape of the plurality of stopping layer openings and a shape of the plurality of inorganic openings are identical.

### Claim 12 (depends on 9)

The apparatus of claim 9, wherein, in a plan view, a shape of the plurality of first inorganic openings and a shape of the plurality of second inorganic openings are identical.