# US 12,004,380 B2 · Organic light-emitting diode display device and manufacturing method thereof

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- Number: US 12,004,380 B2
- Document ID: US12004380B2
- Status: Granted
- Kind: B2
- Application number: 16/964,802
- Filed: 2020-04-30
- Published: 2023-06-01
- Granted: 2024-06-04
- Earliest claimed: 2020-02-17
- Assignees: Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
- Applicants: Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
- Inventors: Weiwei Yang; Cheng Chen
- Web page: https://patentgrep.com/patent/US12004380B2

## CPC

- H10K 59/124: Insulating layers formed between TFT elements and OLED elements
- H10K 59/1201: {Manufacture or treatment}
- H10K 59/1213: {the pixel elements being TFTs}
- H10K 59/123: Connection of the pixel electrodes to the thin film transistors [TFT]
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

The present invention provides an organic light-emitting diode display device and a manufacturing method thereof. An inorganic insulating layer covering a gate is formed, and an organic insulating layer is formed on the inorganic insulating layer, which prevents a problem of metal residue occurring in a subsequently formed metal layer during etching due to a steep slope. A groove is defined on a position of the organic insulating layer corresponding to the gate, and a metal component for forming a capacitor with the gate is formed in the groove and disposed corresponding to the gate.

## Claims

### Claim 1

An organic light-emitting diode display device, comprising:
a substrate;
an active layer formed on the substrate;
a first insulating layer covering the active layer and the substrate;
a gate opposite to the active layer and formed on the first insulating layer;
an inorganic insulating layer covering the gate and the first insulating layer;
an organic insulating and planarization layer comprising a groove and formed on the inorganic insulating layer, wherein the groove is opposite to the gate and concave toward the gate;
a metal component formed in the groove and opposite to the gate;
a second insulating layer at least covering the metal component and the organic insulating and planarization layer;
a source and a drain formed on the second insulating layer and electrically connected to the active layer through a through-hole at least penetrating through the second insulating layer, the first insulating layer, and the inorganic insulating layer; and
a light-emitting device layer formed on a side of the source and the drain away from the substrate.

### Claim 2 (depends on 1)

The organic light-emitting diode display device as claimed in claim 1, wherein a depth of the groove is equal to a thickness of the organic insulating and planarization layer.

### Claim 3 (depends on 1)

The organic light-emitting diode display device as claimed in claim 1, wherein a thickness of the inorganic insulating layer ranges from 500 Å to 2000 Å, and the inorganic insulating layer is a silicon nitride layer.

### Claim 4 (depends on 1)

The organic light-emitting diode display device as claimed in claim 1, wherein a vertical projection of the metal component on the substrate covers a vertical projection of the gate on the substrate, and a horizontal size of the metal component is greater than a horizontal size of the gate.

### Claim 5 (depends on 1)

The organic light-emitting diode display device as claimed in claim 1, wherein the active layer comprises a source contact region and a drain contact region arranged symmetrically with the source contact region;
at least two first openings are defined on the organic insulating and planarization layer, and the at least two first openings are defined corresponding to a portion of the source contact region and a portion of the drain contact region respectively which correspond to the active layer;
the at least two first openings are connected to the through-hole penetrating through the second insulating layer, the first insulating layer, and the inorganic insulating layer; and
the source and the drain contact the portion of the source contact region and the portion of the drain contact region which correspond to the active layer through the at least two first openings and the through-hole penetrating through the second insulating layer, the first insulating layer, and the inorganic insulating layer respectively.

### Claim 6 (depends on 1)

The organic light-emitting diode display device as claimed in claim 1, wherein a longitudinal section of the groove is an inverted trapezoid.

### Claim 7 (depends on 1)

The organic light-emitting diode display device as claimed in claim 1, wherein a thickness of the organic insulating and planarization layer ranges from 0.5 micron to 3 microns.

### Claim 8 (depends on 1)

The organic light-emitting diode display device as claimed in claim 1, wherein the gate comprises one of an aluminum layer, an aluminum alloy layer, a lamination of the aluminum layer and a titanium layer, a lamination of the aluminum alloy layer and the titanium layer, or a lamination of the aluminum alloy layer and a TiNx layer; and
the metal component comprises one of an aluminum layer, an aluminum alloy layer, a lamination of the aluminum layer and a titanium layer, a lamination of the aluminum alloy layer and the titanium layer, or a lamination of the aluminum alloy layer and a TiNx layer.

### Claim 9 (depends on 1)

The organic light-emitting diode display device as claimed in claim 1, wherein the light-emitting diode display device comprises a planarization layer and a pixel definition layer, the light-emitting device layer comprises an anode, an organic light-emitting layer, and a cathode, the planarization layer covers the source, the drain, and the second insulating layer and comprises the through-hole;
the anode is formed on the planarization layer and electrically contacts the drain through the through-hole on the planarization layer;
the pixel definition layer covers the anode and the planarization layer and comprises a second opening, and the second opening is defined corresponding to the anode;
the organic light-emitting layer is formed in the second opening and is located on the anode; and
the cathode at least covers the organic light-emitting layer.

### Claim 10

A manufacturing method of an organic light-emitting diode display device, comprising a plurality of steps as follows:
forming an active layer on a substrate;
forming a first insulating layer covering the active layer and the substrate;
forming a gate opposite to the active layer on the first insulating layer;
forming an inorganic insulating layer covering the gate and the first insulating layer;
forming an organic insulating and planarization layer comprising a groove on the inorganic insulating layer, wherein the groove is opposite to the gate and concave toward the gate;
forming a metal component in the groove, wherein the metal component is opposite to the gate;
forming a second insulating layer at least covering the metal component and the organic insulating and planarization layer;
forming a source and a drain on the second insulating layer, wherein the source and the drain are electrically connected to the active layer through a through-hole at least penetrating through the second insulating layer, the first insulating layer, and the inorganic insulating layer; and
forming a light-emitting device layer on a side of the source and the drain away from the substrate.

### Claim 11 (depends on 10)

The manufacturing method of the organic light-emitting diode display device as claimed in claim 10, wherein a depth of the groove is equal to a thickness of the organic insulating and planarization layer.

### Claim 12 (depends on 10)

The manufacturing method of the organic light-emitting diode display device as claimed in claim 10, wherein a thickness of the inorganic insulating layer ranges from 500 Å to 2000 Å, and the inorganic insulating layer is a silicon nitride layer.

### Claim 13 (depends on 10)

The manufacturing method of the organic light-emitting diode display device as claimed in claim 10, wherein a vertical projection of the metal component on the substrate covers a vertical projection of the gate on the substrate, and a horizontal size of the metal component is greater than a horizontal size of the gate.

### Claim 14 (depends on 10)

The manufacturing method of the organic light-emitting diode display device as claimed in claim 10, wherein the method comprises a following step:
defining at least two first openings on the organic insulating and planarization layer, wherein the at least two first openings are defined corresponding to a portion of a source contact region and a portion of the drain contact region respectively which correspond to the active layer, and the active layer comprises the source contact region and the drain contact region arranged symmetrically with the source contact region.

### Claim 15 (depends on 10)

The manufacturing method of the organic light-emitting diode display device as claimed in claim 10, wherein a longitudinal section of the groove is an inverted trapezoid.

### Claim 16 (depends on 10)

The manufacturing method of the organic light-emitting diode display device as claimed in claim 10, wherein a thickness of the organic insulating and planarization layer ranges from 0.5 micron to 3 microns.

### Claim 17 (depends on 10)

The manufacturing method of the organic light-emitting diode display device as claimed in claim 10, wherein the gate comprises one of an aluminum layer, an aluminum alloy layer, a lamination of the aluminum layer and a titanium layer, a lamination of the aluminum alloy layer and the titanium layer, or a lamination of the aluminum alloy layer and a TiNx layer; and
the metal component comprises one of an aluminum layer, an aluminum alloy layer, a lamination of the aluminum layer and a titanium layer, a lamination of the aluminum alloy layer and the titanium layer, or a lamination of the aluminum alloy layer and a TiNx layer.

### Claim 18 (depends on 10)

The manufacturing method of the organic light-emitting diode display device as claimed in claim 10, wherein the method comprises following step:
forming a planarization layer comprising the through-hole and covering the source, the drain, and the second insulating layer;
wherein the step of forming the light-emitting device layer on the side of the source and the drain away from the substrate comprises following step:
forming an anode on the planarization layer, wherein the anode is electrically connected to the drain through the through-hole;
wherein the method further comprises following step:
forming a pixel definition layer comprising a second opening and covering the anode and the planarization layer, wherein the second opening is defined corresponding to the anode;
wherein the step of forming the light-emitting device layer on the side of the source and the drain away from the substrate further comprises a plurality of steps as follows:
forming the organic light-emitting layer in the second opening, wherein the organic light-emitting layer is located on the anode; and
forming a cathode at least covering the organic light-emitting layer.