# US 12,004,358 B2 · Dual color detection systems and methods

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- Number: US 12,004,358 B2
- Document ID: US12004358B2
- Status: Granted
- Kind: B2
- Application number: 17/222,931
- Filed: 2021-04-05
- Published: 2021-07-22
- Granted: 2024-06-04
- Earliest claimed: 2018-10-05
- Assignees: Teledyne FLIR Commercial Systems, Inc.
- Applicants: Teledyne FLIR Commercial Systems, Inc.
- Inventors: Edward K. Huang
- Web page: https://patentgrep.com/patent/US12004358B2

## CPC

- H10F 30/288: {the devices being sensitive to multiple wavelengths, e.g. multi-spectrum radiation detection devices}
- H10K 39/32: Organic image sensors
- H04N 23/11: for generating image signals from visible and infrared light wavelengths
- H04N 25/709: Circuitry for control of the power supply
- H10F 39/024: {of coatings or optical elements}
- H10F 39/184: {Infrared image sensors}
- H10F 39/1843: {of the hybrid type}
- H10F 39/1847: {Multispectral infrared image sensors having a stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures}
- H10F 39/802: {Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION

## Abstract

Techniques are disclosed for facilitating dual color detection. In one example, an imaging device includes a first pixel configured to detect first image data associated with a first waveband of electromagnetic radiation. The imaging device further includes a second pixel configured to detect second image data associated with a second waveband of the electromagnetic radiation, where at least a portion of the second waveband does not overlap the first waveband. The imaging device further includes a bias circuit configured to apply a first voltage between the first pixel and a first ground contact, and apply a second voltage between the second pixel and a second ground contact. The first voltage is different from the second voltage. Related methods are also provided.

## Claims

### Claim 1

An imaging device comprising:
a first pixel configured to detect first image data associated with a first waveband of electromagnetic radiation;
a second pixel configured to detect second image data associated with a second waveband of the electromagnetic radiation, wherein at least a portion of the second waveband does not overlap the first waveband, wherein the second pixel comprises a first portion of a first layer, a second layer disposed on the first portion, and a third layer disposed on the second layer, wherein the first and third layers have a first conductivity type, and wherein the second layer has a second conductivity type different from the first conductivity type; and
a bias circuit configured to:
apply a first voltage between the first pixel and a first ground contact disposed on and in contact with the first layer; and
apply a second voltage between the second pixel and a second ground contact disposed on and in contact with the second layer, wherein the first voltage is different from the second voltage.

### Claim 2 (depends on 1)

The imaging device of claim 1, further comprising a readout circuit configured to obtain, as part of a single frame, a first signal indicative of the first image data from the first pixel and a second signal indicative of the second image data from the second pixel.

### Claim 3 (depends on 1)

The imaging device of claim 1, wherein the bias circuit is configured to:
apply the first voltage such that a first detector contact of the first pixel is at a lower potential than the first ground contact; and
apply the second voltage such that a second detector contact of the second pixel is at a higher potential than the second ground contact.

### Claim 4 (depends on 3)

The imaging device of claim 3, further comprising:
a third pixel configured to detect third image data associated the first waveband; and
a fourth pixel configured to detect fourth image data associated with the second waveband,
wherein the bias circuit is further configured to:
apply a third voltage between the third pixel and the first ground contact such that a third detector contact of the third pixel is at a lower potential than the first ground contact; and
apply a fourth voltage between the fourth pixel and the second ground contact such that a fourth detector contact of the fourth pixel is at a higher potential than the second ground contact.

### Claim 5 (depends on 3)

The imaging device of claim 3, wherein the first pixel and the second pixel are part of a focal plane array (FPA), and wherein the first ground contact and the second ground contact are along a periphery of the FPA.

### Claim 6 (depends on 1)

The imaging device of claim 1, wherein the first pixel comprises a first back-to-back diode, wherein the second pixel comprises a second back-to-back diode, and wherein the second back-to-back diode comprises the first portion of the first layer, the second layer, and the third layer.

### Claim 7 (depends on 6)

The imaging device of claim 6, wherein:
the first back-to-back diode comprises:
a second portion of the first layer;
a fourth layer disposed on the second portion of the first layer, wherein the fourth layer has the second conductivity type; and
a fifth layer disposed on the fourth layer, wherein the fifth layer has the first conductivity type.

### Claim 8 (depends on 7)

The imaging device of claim 7, wherein the second layer and the fourth layer are portions of a first continuous layer having the second conductivity type, or wherein the third layer and the fifth layer are disjoint.

### Claim 9 (depends on 7)

The imaging device of claim 7, wherein:
one or more of the first layer, the second layer, the third layer, the fourth layer, or the fifth layer comprises a bulk material structure, a superlattice structure, a quantum well infrared photodetector structure, or a mercury cadmium telluride structure;
the first conductivity type is an n-type conductivity; and
the second conductivity type is a p-type conductivity.

### Claim 10 (depends on 7)

The imaging device of claim 7, wherein:
the first pixel further comprises:
a first barrier layer disposed between and in contact with the second portion and the fourth layer; and/or
a second barrier layer disposed between and in contact with the fourth layer and the fifth layer; and
the second pixel further comprises:
a third barrier layer disposed between and in contact with the first portion and the second layer; and/or
a fourth barrier layer disposed between and in contact with the second layer and the third layer.

### Claim 11 (depends on 10)

The imaging device of claim 10, wherein the first pixel comprises the second barrier layer, wherein the imaging device further comprises a third pixel configured to detect third image data associated with the first waveband of electromagnetic radiation, wherein the third pixel comprises:
a third portion of the first layer;
a fifth barrier layer disposed on the third portion of the first layer;
a sixth layer disposed on the fifth barrier layer;
a sixth barrier layer disposed on the sixth layer; and
a seventh layer disposed on the sixth barrier layer,
wherein:
the second layer, the fourth layer, and the sixth layer are portions of a first continuous layer, and
the second barrier layer and the sixth barrier layer are portions of a second continuous layer.

### Claim 12

A method for fabricating an imaging device, the method comprising:
forming a first layer having a first conductivity type;
forming a second layer on the first layer, wherein the second layer has a second conductivity type different from the first conductivity type;
forming a third layer on the second layer, wherein the third layer has the first conductivity type;
forming a first set of pixels of the imaging device, wherein each pixel of the first set of pixels is formed by removing a respective portion of each of the first layer, the second layer, and the third layer, wherein the first set of pixels is associated with detection of a first waveband of electromagnetic radiation;
forming a second set of pixels of the imaging device, wherein each pixel of the second set of pixels is formed by removing a respective portion of the first layer, wherein the second set of pixels is associated with detection of a second waveband of the electromagnetic radiation, and wherein at least a portion of the second waveband does not overlap the first waveband;
forming a first ground contact on the first layer; and
forming a second ground contact on the second layer.

### Claim 13 (depends on 12)

The method of claim 12, further comprising coupling the first set of pixels and the second set of pixels to a readout circuit, and wherein
the forming the first set of pixels comprises etching the first layer, the second layer, and third layer to remove the respective portion of each of the first layer, the second layer, and the third layer; and
each pixel of the second set of pixels is formed by removing the respective portion of the first layer and a respective portion of the second layer.

### Claim 14 (depends on 12)

The method of claim 12, further comprising:
forming a first barrier layer on the first layer, wherein the first barrier layer is between and in contact with the first layer and the second layer; and
forming a second barrier layer on the second layer, wherein the second barrier layer is between and in contact with the second layer and the third layer,
wherein each pixel of the first set of pixels is formed by removing a respective portion of each of the first layer, the second layer, the third layer, the first barrier layer, and the second barrier layer.

### Claim 15 (depends on 12)

The method of claim 12, wherein the first set of pixels and the second set of pixels form a focal plane array (FPA), wherein the method further comprises:
forming a detector contact for each pixel of the first set of pixels and each pixel of the second set of pixels,
wherein the first ground contact and the second ground contact are formed along a periphery of the FPA.

### Claim 16

A method for operating an imaging device, the method comprising:
applying, by a bias circuit of the imaging device, a first voltage between a first pixel of the imaging device and a first ground contact;
applying, by the bias circuit, a second voltage between a second pixel of the imaging device and a second ground contact, wherein the second pixel comprises a first portion of a first layer, a second layer disposed on the first portion, and a third layer disposed on the second layer, wherein the first and third layers have a first conductivity type, wherein the second layer has a second conductivity type different from the first conductivity type, wherein the first ground contact is disposed on and in contact with the first layer, and wherein the second ground contact is disposed on and in contact with the second layer;
detecting, by the first pixel, first image data associated with a first waveband of electromagnetic radiation; and
detecting, by the second pixel, second image data associated with a second waveband of the electromagnetic radiation, wherein at least a portion of the second waveband does not overlap the first waveband.

### Claim 17 (depends on 16)

The method of claim 16, further comprising:
generating, by the first pixel, a first signal indicative of the first image data;
generating, by the second pixel, a second signal indicative of the second image data; and
receiving, by a readout circuit of the imaging device, the first signal and the second signal as part of a single frame.

### Claim 18 (depends on 16)

The method of claim 16, wherein:
the applying the first voltage comprises applying the first voltage such that a first detector contact of the first pixel is at a lower potential than the first ground contact; and
the applying the second voltage comprises applying the second voltage such that a second detector contact of the second pixel is at higher potential than the second ground contact; and
the method further comprises:
applying, by the bias circuit, a third voltage between a third pixel of the imaging device and the first ground contact such that the third pixel is at a lower potential than the first ground contact;
applying, by the bias circuit, a fourth voltage between a fourth pixel of the imaging device and the second ground contact such that the fourth pixel is at a higher potential than the second ground contact;
detecting, by the third pixel, third image data associated with the first waveband; and
detecting, by the fourth pixel, fourth image data associated with the second waveband.

### Claim 19 (depends on 16)

The method of claim 16, wherein:
the first pixel comprises:
a second portion of the first layer;
a fourth layer disposed on the second portion of the first layer, wherein the fourth layer has the second conductivity type; and
a fifth layer disposed on the fourth layer, wherein the fifth layer has the first conductivity type; and
the third layer and the fifth layer are disjoint.

### Claim 20 (depends on 19)

The method of claim 19, wherein:
the first pixel further comprises:
a first barrier layer disposed between and in contact with the second portion and the fourth layer; and/or
a second barrier layer disposed between and in contact with the fourth layer and the fifth layer; and
the second pixel further comprises:
a third barrier layer disposed between and in contact with the first portion and the second layer; and
a fourth barrier layer disposed between and in contact with the second layer and the third layer; and/or
the second layer and the fourth layer are portions of a continuous layer having the second conductivity type.