# US 12,004,352 B2 · Semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,004,352 B2 - Document ID: US12004352B2 - Status: Granted - Kind: B2 - Application number: 18/334,693 - Filed: 2023-06-14 - Published: 2023-10-12 - Granted: 2024-06-04 - Earliest claimed: 2015-03-09 - Assignees: Kioxia Corporation - Applicants: Kioxia Corporation - Inventors: Takeshi Kamigaichi - Web page: https://patentgrep.com/patent/US12004352B2 ## CPC - H10B 43/27: the channels comprising vertical portions, e.g. U-shaped channels - H10B 43/10: characterised by the top-view layout - H10B 43/30: characterised by the memory core region - H10B 43/35: with cell select transistors, e.g. NAND - H10D 30/694: {characterised by the shapes, relative sizes or dispositions of the gate electrodes} - H10D 64/252: {for vertical or pseudo-vertical devices} - H10B 41/27: the channels comprising vertical portions, e.g. U-shaped channels - H10B: ELECTRONIC MEMORY DEVICES - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A semiconductor body device includes a stacked body including a plurality of electrode layers stacked with an insulator interposed, a semiconductor body extending in a stacking direction of the stacked body through the electrode layers and having a pipe shape, a plurality of memory cells being provided at intersecting portions of the semiconductor body with the electrode layers, and a columnar insulating member extending in the stacking direction inside the semiconductor body having the pipe shape. ## Claims ### Claim 1 A semiconductor device comprising: a stacked body including a plurality of electrode layers stacked with an insulator interposed; a semiconductor body having a pipe shape and extending in a stacking direction of the stacked body through the electrode layers, a plurality of memory cells being provided at intersecting portions of the semiconductor body with the electrode layers; and a columnar insulating member extending in the stacking direction inside the pipe-shaped semiconductor body, the electrode layers including a first electrode layer and a second electrode layer, the first electrode layer being disposed in a first level in the stacking direction and the second electrode layer being disposed in a second level different from the first level in the stacking direction, the insulator including a first insulator contiguous above the first electrode layer, a second insulator contiguous below the first electrode layer, a third insulator contiguous above the second electrode layer, and a fourth insulator contiguous below the second electrode layer, the first electrode layer being interposed between the first insulator and the second insulator, the second electrode layer being interposed between the third insulator and the fourth insulator, a thickness of the first electrode layer being larger than both of a thickness of the first insulator and a thickness of the second insulator and a thickness of the second electrode layer being larger than both of a thickness of the third insulator and a thickness of the fourth insulator, an outer periphery of the pipe-shaped semiconductor body having a first outer periphery facing to the first insulator, a second outer periphery facing to the second insulator, a first base surface facing to the first electrode layer, a third outer periphery facing to the third insulator, a fourth outer periphery facing to the fourth insulator, and a second base surface facing to the second electrode layer, the first base surface being disposed between the first outer periphery and the second outer periphery and being defined by a surface substantially aligned in the stacking direction with the first outer periphery and the second outer periphery, the second base surface being disposed between the third outer periphery and the fourth outer periphery and being defined by a surface substantially aligned in the stacking direction with the third outer periphery and the fourth outer periphery, a diameter of the columnar insulating member at the first level being larger than a diameter of the columnar insulating member at the second level, a distance from a central axis of the pipe-shaped semiconductor body to the first base surface is larger than a distance from the central axis to the second base surface, a distance between the first base surface and the first electrode layer being larger than a distance between the second base surface and the second electrode layer. ### Claim 2 (depends on 1) The device according to claim 1, wherein the pipe-shaped semiconductor body and the columnar insulating member are provided in a hole extending in the stacking direction through the stacked body and a stacked film is provided between the electrode layers and the pipe-shaped semiconductor body in the hole. ### Claim 3 (depends on 2) The device according to claim 2, wherein the stacked film includes a silicon oxide film on a side of the pipe-shaped semiconductor body and a silicon nitride film between the silicon oxide film and the electrode layers. ### Claim 4 (depends on 1) The device according to claim 1, wherein the memory cells include a tunnel insulating film, a charge storage film, and a block insulating film stacked at the intersecting portions in order on the outer periphery of the pipe-shaped semiconductor body. ### Claim 5 (depends on 4) The device according to claim 4, wherein a block insulating film includes a silicon oxide film and a film having higher dielectric constant than the silicon oxide film. ### Claim 6 (depends on 1) The device according to claim 1, wherein the memory cells include a tunnel insulating film formed along the outer periphery of the pipe-shaped semiconductor body, the tunnel insulating film extending in the stacking direction between the pipe-shaped semiconductor body and the second electrode layer, between the pipe-shaped semiconductor body and the third insulator, and between the pipe-shaped semiconductor body and the fourth insulator. ### Claim 7 (depends on 1) The device according to claim 1, wherein the distance between the first base surface and the first electrode layer is larger than a distance between the first outer periphery and the first insulator, and a distance between the second outer periphery and the second insulator. ### Claim 8 (depends on 1) The device according to claim 1, wherein the first electrode layer is disposed above the second electrode layer in the stacking direction. ### Claim 9 (depends on 1) The device according to claim 1, wherein a thickness of the first electrode layer is substantially equal to a thickness of the second electrode layer. ### Claim 10 (depends on 1) The device according to claim 1, wherein the stacked body further includes a source-side select gate layer provided below the electrode layers and a drain-side select gate layer provided above the electrode layers. ### Claim 11 A semiconductor device comprising: a stacked body including a plurality of electrode layers stacked with an insulator interposed, a source-side select gate layer provided below the electrode layers, and a drain-side select gate layer provided above the electrode layers; a semiconductor body extending in a stacking direction of the stacked body through the electrode layers and having a pipe shape, a plurality of memory cells being provided at intersecting portions of the semiconductor body with the electrode layers; and a columnar insulating member provided inside the pipe-shaped semiconductor body at the intersecting portions of the pipe-shaped semiconductor body with the electrode layers and at an intersecting portion of the pipe-shaped semiconductor body with the source-side select gate layer, the electrode layers including a first electrode layer disposed in a first level in the stacking direction and a second electrode layer disposed in a second level in the stacking direction, one of the first level and the second level being located farther from the source-side select gate layer than the other of the first level and the second level while the other of the first level and the second level being located farther from the drain-side select gate layer than the one of the first level and the second level, the insulator including a first insulator contiguous above the first electrode layer, a second insulator contiguous below the first electrode layer, a third insulator contiguous above the second electrode layer, and a fourth insulator contiguous below the second electrode layer, the first electrode layer being interposed between the first insulator and the second insulator, the second electrode layer being interposed between the third insulator and the fourth insulator, a thickness of the first electrode layer being larger than both of a thickness of the first insulator and a thickness of the second insulator, an outer periphery of the pipe-shaped semiconductor body having a first outer periphery facing to the first insulator, a second outer periphery facing to the second insulator, a first base surface facing to the first electrode layer, a third outer periphery facing to the third insulator, a fourth outer periphery facing to the fourth insulator, and a second base surface facing to the second electrode layer, the first base surface being disposed between the first outer periphery and the second outer periphery and being defined by a surface substantially aligned in the stacking direction with the first outer periphery and the second outer periphery, the second base surface being disposed between the third outer periphery and the fourth outer periphery and being defined by a surface substantially aligned in the stacking direction with the third outer periphery and the fourth outer periphery, a diameter of the columnar insulating member at the first level being larger than a diameter of the columnar insulating member at the second level, a distance between the first base surface and the first electrode layer being larger than a distance between the second base surface and the second electrode layer. ### Claim 12 (depends on 11) The device according to claim 11, wherein the pipe-shaped semiconductor body and the columnar insulating member are provided in a hole extending in the stacking direction through the stacked body and a stacked film is provided between the electrode layers and the pipe-shaped semiconductor body in the hole. ### Claim 13 (depends on 12) The device according to claim 12, wherein the stacked film includes a silicon oxide film on a side of the pipe-shaped semiconductor body and a silicon nitride film between the silicon oxide film and the electrode layers. ### Claim 14 (depends on 11) The device according to claim 11, wherein the memory cells include a tunnel insulating film, a charge storage film, and a block insulating film stacked at the intersecting portions in order on the outer periphery of the pipe-shaped semiconductor body. ### Claim 15 (depends on 14) The device according to claim 14, wherein a block insulating film includes a silicon oxide film and a film having higher dielectric constant than the silicon oxide film. ### Claim 16 (depends on 11) The device according to claim 11, wherein the memory cells include a tunnel insulating film formed along the outer periphery of the pipe-shaped semiconductor body, the tunnel insulating film extending in the stacking direction between the pipe-shaped semiconductor body and the second electrode layer, between the pipe-shaped semiconductor body and the third insulator, and between the pipe-shaped semiconductor body and the fourth insulator. ### Claim 17 (depends on 11) The device according to claim 11, wherein the distance between the first base surface and the first electrode layer is larger than a distance between the first outer periphery and the first insulator, and a distance between the second outer periphery and the second insulator. ### Claim 18 (depends on 11) The device according to claim 11, wherein the first electrode layer disposed in the first level is located farther from the source-side select gate layer than the second electrode layer disposed in the second level while the second electrode layer is located farther from the drain-side select gate layer than the first electrode layer. ### Claim 19 (depends on 11) The device according to claim 11, wherein a thickness of the first electrode layer is substantially equal to a thickness of the second electrode layer. ### Claim 20 (depends on 11) The device according to claim 11, wherein the pipe-shaped semiconductor body and the columnar insulating member are provided in a hole extending in the stacking direction through the stacked body, the hole having a central axis along the stacking direction, and a distance from the central axis to the first base surface is larger than a distance from the central axis to the second base surface.