# US 12,004,349 B2 · Semiconductor device and method for manufacturing the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,004,349 B2 - Document ID: US12004349B2 - Status: Granted - Kind: B2 - Application number: 17/459,825 - Filed: 2021-08-27 - Published: 2022-09-01 - Granted: 2024-06-04 - Earliest claimed: 2021-03-01 - Assignees: Kioxia Corporation - Applicants: Kioxia Corporation - Inventors: Tatsufumi Hamada; Tomohiro Kuki; Yosuke Mutsuno; Shinichi Sotome; Ryota Suzuki - Web page: https://patentgrep.com/patent/US12004349B2 ## CPC - H10B 43/27: the channels comprising vertical portions, e.g. U-shaped channels - H10B: ELECTRONIC MEMORY DEVICES ## Abstract A semiconductor device includes: a first stacked film including first electrode layers; an insulating layer provided on the first stacked film; a second stacked film provided on the insulating layer and including second electrode layers; and a columnar portion extending through the first stacked film, the insulating layer, and the second stacked film. The columnar portion extending in the insulating layer includes a first portion having a first width in a second direction intersecting the first direction, and a second portion provided at a different location along the first direction and having a second width in the second direction. The columnar portion extending in the second stacked film includes a third portion having a third width along the second direction. The second width is larger than the first width and the third width. ## Claims ### Claim 1 A semiconductor device, comprising: a first stacked film including a plurality of first electrode layers separated from each other; an insulating layer provided on the first stacked film; a second stacked film provided on the insulating layer and including a plurality of second electrode layers separated from each other; and a columnar portion including a first insulating film, a charge storage layer, a second insulating film, and a semiconductor layer, and extending along a first direction through the first stacked film, the insulating layer, and the second stacked film, wherein the columnar portion extending in the insulating layer includes a first portion having a first width in a second direction intersecting the first direction, and a second portion provided at a different location along the first direction and having a second width in the second direction, the columnar portion extending in the second stacked film includes a third portion having a third width along the second direction, the second width is larger than the first width and the third width. ### Claim 2 (depends on 1) The semiconductor device according to claim 1, wherein a thickness, in the first direction, of the second portion is equal to or less than twice a total film thickness of the first insulating film, the charge storage layer, and the second insulating film. ### Claim 3 (depends on 1) The semiconductor device according to claim 1, wherein the first width is larger than the third width. ### Claim 4 (depends on 1) The semiconductor device according to claim 1, wherein the columnar portion extending in the insulating layer further includes a third portion provided on an opposite side of the first portion as the second portion along the first direction, the columnar portion extending in the first stacked film and having a fifth width along the second direction, wherein the fourth width is larger than the first width and the fifth width. ### Claim 5 (depends on 4) The semiconductor device according to claim 4, wherein a thickness in the first direction of the third portion is equal to or less than twice a total film thickness of the first insulating film, the charge storage layer, and the second insulating film. ### Claim 6 (depends on 4) The semiconductor device according to claim 4, wherein the first width is larger than the fifth width. ### Claim 7 (depends on 4) The semiconductor device according to claim 4, wherein a width of an outer peripheral surface of the semiconductor layer adjacent the first portion is larger than a width of the outer peripheral surface of the semiconductor layer adjacent any of the second and third portions. ### Claim 8 (depends on 4) The semiconductor device according to claim 4, wherein a width of an inner peripheral surface of the semiconductor layer adjacent the first portion is larger than a width of the inner peripheral surface of the semiconductor layer adjacent any of the second and third portions. ### Claim 9 (depends on 4) The semiconductor device according to claim 4, wherein the insulating layer includes a first insulating layer, a second insulating layer provided on the first insulating layer, and a third insulating layer provided under the first insulating layer, at least a portion of the first portion extends in the first insulating layer, at least a portion of the second portion extends in the second insulating layer, and at least a portion of the third portion extends in the third insulating layer. ### Claim 10 (depends on 9) The semiconductor device according to claim 9, wherein the first insulating layer is formed of a material different from a material of the second insulating layer and a material of the third insulating layer. ### Claim 11 (depends on 9) The semiconductor device according to claim 9, wherein the first insulating layer has a density different from a density of the second insulating layer and a density of the third insulating layer. ### Claim 12 A semiconductor device, comprising: a first stacked film including a plurality of first electrode layers separated from each other; an insulating layer provided on the first stacked film; a second stacked film provided on the insulating layer and including a plurality of second electrode layers separated from each other; and a columnar portion including a first insulating film, a charge storage layer, a second insulating film, and a semiconductor layer, and extending along a first direction through the first stacked film, the insulating layer, and the second stacked film, wherein the columnar portion extending in the insulating layer includes a fourth portion having a fourth width in a second direction intersecting the first direction, and a fifth portion provided higher than the fourth portion and having a fifth width in the second direction, and wherein the fifth width is smaller than the fourth width and larger than a sixth width in the second direction of the columnar portion extending in the second stacked film. ### Claim 13 (depends on 12) The semiconductor device according to claim 12, wherein a side surface of the fifth portion is inclined with respect to the first direction. ### Claim 14 (depends on 12) The semiconductor device according to claim 12, wherein the columnar portion extending in the insulating layer further includes a sixth portion provided lower than that of the fourth portion and having a seventh width smaller than the fourth width and larger than an eighth width of the columnar portion extending in the first stacked film. ### Claim 15 (depends on 14) The semiconductor device according to claim 14, wherein the side surface of the seventh portion is inclined with respect to the first direction. ### Claim 16 (depends on 14) The semiconductor device according to claim 14, wherein the insulating layer includes a fourth insulating layer, a fifth insulating layer provided on the fourth insulating layer, and a sixth insulating layer provided under the fourth insulating layer, at least a portion of the fourth portion extends in the fourth insulating layer, at least a portion of the fifth portion extends in the fifth insulating layer, and at least a portion of the sixth portion extends in the sixth insulating layer. ### Claim 17 (depends on 16) The semiconductor device according to claim 16, wherein the insulating layer further includes a seventh insulating layer provided on the fifth insulating layer, and at least a portion of the second portion extends in the fifth and seventh insulating layers.